Patents by Inventor CHANGGENG SONG

CHANGGENG SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10720439
    Abstract: A method for manufacturing a semiconductor device includes providing a substrate structure having an active region, a gate insulating layer, a charge storage layer, a gate dielectric layer, and a gate layer sequentially formed on the active region. The method also includes forming a patterned metal layer on the substrate structure, removing a respective portion of the gate layer, the gate dielectric layer, the charge storage layer using the patterned metal gate layer as a mask to form multiple gate structures separated from each other by a space. The gate structures each include a stack containing a second portion of the charge storage layer, the gate dielectric layer, the gate layer, and one of the gate lines. The method further includes forming an interlayer dielectric layer on a surface of the gate structures stretching over the space while forming an air gap in the space.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: July 21, 2020
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventor: Changgeng Song
  • Publication number: 20170221914
    Abstract: A method for manufacturing a semiconductor device includes providing a substrate structure having an active region, a gate insulating layer, a charge storage layer, a gate dielectric layer, and a gate layer sequentially formed on the active region. The method also includes forming a patterned metal layer on the substrate structure, removing a respective portion of the gate layer, the gate dielectric layer, the charge storage layer using the patterned metal gate layer as a mask to form multiple gate structures separated from each other by a space. The gate structures each include a stack containing a second portion of the charge storage layer, the gate dielectric layer, the gate layer, and one of the gate lines. The method further includes forming an interlayer dielectric layer on a surface of the gate structures stretching over the space while forming an air gap in the space.
    Type: Application
    Filed: January 11, 2017
    Publication date: August 3, 2017
    Inventor: CHANGGENG SONG