Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Abstract: Provided is a substrate cleaning apparatus including: a cleaning bath configured to accommodate a substrate having a first surface and a second surface; a substrate support configured to support the substrate; first and second nozzle bars provided in the cleaning bath to be rotatable in a plane parallel with the substrate, each of the first and the second nozzle bars including a passage; a plurality of nozzles provided along a longitudinal direction of each of the first and the second nozzle bars and configured to spray the cleaning solution from the passage of each of the first and the second nozzle bars to the substrate; and first and second brushes, the first brush provided on a first side of the substrate and configured to clean the first surface and the second brush provided on a second side of the substrate and configured to clean the second surface of the substrate.

Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Abstract: A polishing head includes a substrate carrier to suck and to pressurize a substrate, and a retainer ring secured under the substrate carrier, the retainer ring surrounding a circumference of the substrate and including a cooling channel therethrough to circulate a coolant fluid.

Abstract: Provided is a substrate cleaning apparatus including: a cleaning bath configured to accommodate a substrate having a first surface and a second surface; a substrate support configured to support the substrate; first and second nozzle bars provided in the cleaning bath to be rotatable in a plane parallel with the substrate, each of the first and the second nozzle bars including a passage; a plurality of nozzles provided along a longitudinal direction of each of the first and the second nozzle bars and configured to spray the cleaning solution from the passage of each of the first and the second nozzle bars to the substrate; and first and second brushes, the first brush provided on a first side of the substrate and configured to clean the first surface and the second brush provided on a second side of the substrate and configured to clean the second surface of the substrate.

Abstract: A polishing head includes a substrate carrier to suck and to pressurize a substrate, and a retainer ring secured under the substrate carrier, the retainer ring surrounding a circumference of the substrate and including a cooling channel therethrough to circulate a coolant fluid.

Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Abstract: A wafer guide for preventing a wafer breakage in a semiconductor cleaning apparatus includes a lower supporter, side supporters, fixing units and stoppers. The lower supporter is provided with a plurality of slots formed with the same interval in a length direction to vertically stand a plurality of wafers thereon. The side supporters are structured and arranged in parallel at each side above the lower supporter. The side supporters support side end parts of the wafers. The fixing units are adapted to support both end parts of the lower supporter and the side supporters, and may be fixed to a bath. The stoppers are individually coupled to each of the fixing units. The stoppers are operable to generate an error in a close operation of holder units of the robot chuck when the robot chuck deviates from a normal alignment range, so as not to perform a wafer chucking, thereby preventing a wafer breakage during the wafer chucking.

Abstract: A wafer guide for preventing a wafer breakage in a semiconductor cleaning apparatus includes a lower supporter, side supporters, fixing units and stoppers. The lower supporter is provided with a plurality of slots formed with the same interval in a length direction to vertically stand a plurality of wafers thereon. The side supporters are structured and arranged in parallel at each side above the lower supporter. The side supporters support side end parts of the wafers. The fixing units are adapted to support both end parts of the lower supporter and the side supporters, and may be fixed to a bath. The stoppers are individually coupled to each of the fixing units. The stoppers are operable to generate an error in a close operation of holder units of the robot chuck when the robot chuck deviates from a normal alignment range, so as not to perform a wafer chucking, thereby preventing a wafer breakage during the wafer chucking.

Abstract: In a method of processing a semiconductor structure and a method of forming a capacitor for a semiconductor device using the same, a semiconductor structure may be cleaned using a cleaning solution having a surface tension lower than that of water. The semiconductor structure may be dried in an isopropyl alcohol vapor atmosphere.