Patents by Inventor Changgil SON

Changgil SON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230274943
    Abstract: An etching gas mixture includes a nitrogen-containing compound and an inert gas. To manufacture an integrated circuit (IC) device, a silicon-containing film on a substrate is etched by using plasma generated from the etching gas mixture, and thus a hole is formed in the silicon-containing film. The nitrogen-containing compound is selected from a compound represented by Formula 1 and a compound represented by Formula 2: (R1)C?N ??[Formula 1] wherein in Formula 1, R1 is a C2 to C3 linear or branched perfluoroalkyl group, (R2)(R3)C?NH ??[Formula 2] wherein in Formula 2, each of R2 and R3 is independently a C1 to C2 linear perfluoroalkyl group.
    Type: Application
    Filed: January 25, 2023
    Publication date: August 31, 2023
    Applicants: SAMSUNG ELECTRONICS CO., LTD., L'Air Liquide Société Anonyme pour I'Etude et I'Exploitation des procédés Georges Claude
    Inventors: Changgil SON, Nathan STAFFORD, Jinhwan LEE, Hoyoung JANG