Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes a semiconductor fin projecting from a substrate. Semiconductor nanostructures are disposed over the semiconductor fin. A gate electrode is disposed over the semiconductor fin and around the semiconductor nanostructures. A dielectric fin is disposed over the substrate. A dielectric structure is disposed over the dielectric fin. An upper surface of the dielectric structure is disposed over the upper surface of the gate electrode. A dielectric layer is disposed over the substrate. The dielectric fin laterally separates both the gate electrode and the semiconductor nanostructures from the dielectric layer. An upper surface of the dielectric layer is disposed over the upper surface of the gate electrode structure and the upper surface of the dielectric structure. A lower surface of the dielectric layer is disposed below the upper surface of the dielectric fin.

Abstract: A method includes forming a gate structure on a substrate; forming a gate spacer on a sidewall of the gate structure; forming a carbon-containing layer on the gate spacer; diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer; forming a recess in the substrate on one side of the gate spacer opposite to the gate structure; and forming an epitaxy feature in the recess of the substrate.

Abstract: A semiconductor device includes a first device fin and a second device fin that are each located in a first region of the semiconductor device. The first region has a first pattern density. A first dummy fin is located in the first region. The first dummy fin is disposed between the first device fin and the second device fin. The first dummy fin has a first height. A third device fin and a fourth device fin are each located in a second region of the semiconductor device. The second region has a second pattern density that is greater the first pattern density. A second dummy fin is located in the second region. The second dummy fin is disposed between the third device fin and the fourth device fin. The second dummy fin has a second height that is greater than the first height.

Abstract: A backlight driving method includes steps of: (A) receiving a piece of image data that includes a number (K) of segments, where K?2; (B) generating a piece of adjustment data that includes a number (K) of segments; each segment of the adjustment data being generated based on a respective segment of the image data and upon receipt of the respective segment of the image data; (C) generating, based on a piece of delay data and on an original synchronization control (SC) signal that has a pulse, an internal SC signal that has a number (K) of pulses; and (D) generating a backlight driving output based on the adjustment data and the internal SC signal, so as to drive a backlight source of a scan-type display to emit light.

Abstract: A semiconductor package includes a substrate, a semiconductor device, and a ring structure. The semiconductor device disposed on the substrate. The ring structure disposed on the substrate and surrounds the semiconductor device. The ring structure includes a first portion and a second portion. The first portion bonded to the substrate. The second portion connects to the first portion. A cavity is between the second portion and the substrate.

Abstract: An optical device includes a first waveguide, ring-shaped waveguides adjacent to the first waveguide, and heaters coupled to the ring-shaped waveguides in one-to-one correspondence. A method includes coupling a first light source with a first wavelength to the first waveguide, increasing electric current through the heaters until a first one of the ring-shaped waveguides resonates, assigning the first one of the ring-shaped waveguides to the first wavelength, resetting the electric current through the heaters to the initial electric current, coupling a second light source with a second wavelength to the first waveguide wherein the second wavelength is different from the first wavelength, increasing the electric current through the heaters until a second one of the ring-shaped waveguides resonates wherein the second one of the ring-shaped waveguides is different from the first one of the ring-shaped waveguides, and assigning the second one of the ring-shaped waveguides to the second wavelength.

Abstract: The present disclosure provides a photo sensing device, the photo sensing device includes a substrate, including a silicon layer at a front surface, a photosensitive member extending into and at least partially surrounded by the silicon layer, a first doped region having a first conductivity type at a first side of the photosensitive member, wherein the first doped region is in the silicon layer, and a second doped region having a second conductivity type different from the first conductivity type at a second side of the photosensitive member opposite to the first side, wherein the second doped region is in the silicon layer, and the first doped region is apart from the second doped region, and a superlattice layer disposed between the photosensitive member and the silicon layer, wherein the superlattice layer includes a first material and a second material different from the first material.

Abstract: A lifting table stand includes a pair of telescopic columns, a carrier, an actuation module, and a passive mechanism. Each telescopic column includes multiple tubes adapted to sheathe with each other and move telescopically relative to each other. The carrier includes a beam straddling the telescopic columns and a pair of support members perpendicularly connected to two ends of the beam. The actuation module includes a receiving member detachably installed to the beam and a driver connected to the receiving member. The passive mechanism includes a transmission shaft and a pair of gear sets installed in the tubes. The transmission shaft passes the driver and is connected to each gear set. Since the receiving member is detachably installed to beam, the actuation module may be changed to different types to control the elevation of the lifting table stand.

Abstract: A latch circuit includes first and second supply nodes having a first voltage value and a second voltage below the first voltage value, first and second input nodes, first and second output nodes, a first switch coupled between the first and second output nodes and turned on and off responsive to first and second clock signal states, first and second transistors coupled between the respective second and first output nodes and the second supply node. A second switch is coupled between a first transistor gate and the first input node, a third switch is coupled between a second transistor gate and the second input node, and each is turned on and off responsive to the first and second states. During the first state, one of the first or second transistors is part of a low resistance path from the first power supply node to the second power supply node.

Abstract: A portable electronic device is provided. The portable electronic device includes a body, an image sensor and a main system. The image sensor continually captures a first image outside the body, detects at least one motion of a user according to the first image, and generates a control signal related to the motion. The main system receives the control signal from the image sensor and executes a function or a service corresponding to the motion according to the control signal.

Abstract: An image capturing assembly including a mounting base, a driving component, a first gear, a second gear, a lens assembly, a third gear and a resistance component. The driving component is disposed on the mounting base. The first gear is connected to the driving component and configured to be driven by the driving component. The second gear is pivotally connected to the mounting base and connected to the first gear. The driving component is configured to drive the second gear via the first gear. The lens assembly is fixed to the second gear. The third gear is pivotally connected to the mounting base and engaged with the second gear. The resistance component presses against the third gear to allow the third gear to transmit a resistance against the second gear during a rotation of the second gear.

Abstract: A biplane flying device includes a fuselage, an upper wing, a lower wing, a first propulsion assembly and a second propulsion assembly. The upper wing is connected to one side of the fuselage. The upper wing has a first end and a second end opposite to each other. The lower wing is connected to the fuselage and opposite to the upper wing. The lower wing has a third end and a fourth end opposite to each other. The first end is opposite to the third end, and the second end is opposite to the fourth end. The first propulsion assembly is connected between the first end, the third end and the fuselage. The second propulsion assembly is connected between the second end, the fourth end and the fuselage.

Abstract: A chip transferring method includes providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion chips and a second portion chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion chips from the first load-bearing structure; dividing the first portion chips into a plurality of blocks according to the photoelectric characteristic values, and each of the plurality of blocks comprising multiple chips of the first portion chips; and transferring the multiple chips of one of the plurality of blocks to a second load-bearing structure.

Abstract: A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: A lightweight beam structure includes a first and a second frame. The first frame includes an upper plate, two inner side plates downward bent and extended from two sides of the upper plate, two outer side plates upward bent and extended from two inner side plates respectively and two fixing plates bent and extended from two outer side plates respectively. Each outer side plate is formed outside each inner side plate. A groove is formed between each inner side plate and each outer side plate. The second frame is connected with the first frame and includes a top plate and two intermediate plates downward bent and extended from two sides of the top plate. Each intermediate plate is received in each groove. The top plate is formed over the upper plate. Therefore, the stability is maintained and the weight is reduced so that the material costs may be decreased.

Abstract: An optical detection device is applied to an organism and includes a light emitting module, an optical detection module and an operation processor. The light emitting module includes a plurality of light emitters arranged along a first direction. The optical detection module includes a plurality of optical sensors arranged along a second direction and symmetrically relative to the light emitting module. The second direction is substantially different from the first direction. The optical sensors are substantially placed more outward from a center of the optical detection device than the light emitters. The operation processor is electrically connected to the optical detection module. The operation processor is adapted to analyze signal variation in the plurality of light emitters acquired by each of the plurality of optical sensors for determining a physiological feature of the organism.

Abstract: The disclosure is a beam structure for a leg stand of an electric table, which includes a first frame and a second frame. The first frame includes an inner bottom plate, an inner side plate and an inner embedding plate. The inner embedding plate is formed on outside of the inner side plate. The inner embedding plate includes an exposed section. The second frame is movably connected with the first frame. The second frame includes an outer bottom plate, an outer side plate and an outer connecting plate. The inner bottom plate is formed above the outer bottom plate. The inner side plate is formed on inside of the outer side plate. The inner embedding plate is correspondingly embedded in the outer connecting plate. The exposed section is exposed from the outer connecting plate.

Abstract: Present invention is related to a microwave and electromagnetic heated foaming method, mold and foaming material thereof. The microwave and electromagnetic heated foaming method comprises steps of adding a foam material into a mold, simultaneously applying a microwave and electromagnetic energy toward the mold under a normal or low pressure, and the microwave and electromagnetic energy made the foam material into molded foam body. The mold of the present invention has a microwave penetrating part and an electromagnetic heating part. The microwave penetrating part has an extruded bottom that is corresponded to a dented top of the electromagnetic heat penetrating part. By utilizing the microwave and electromagnetic energy, the present invention is about to provide an efficient way for processing the foaming material compared to the conventional infrared or electrical heated tube heating and achieve the foam method that can be executed under normal or low pressure.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A circuit board, including a first dielectric material, a second dielectric material, a third dielectric material, a fourth dielectric material, a first external circuit layer, a second external circuit layer, a conductive structure, a first conductive via, and multiple second conductive vias, is provided. The first conductive via at least passes through the first dielectric material and the fourth dielectric material, and is electrically connected to the first external circuit layer and the second external circuit layer to define a signal path. The second conductive vias pass through the first dielectric material, the second dielectric material, the third dielectric material, and a part of the conductive structure, and surround the first conductive via. The second conductive vias are electrically connected to the first external circuit layer, the conductive structure, and the second external circuit layer to define a ground path, and the ground path surrounds the signal path.