Patents by Inventor Chang-gong Wang
Chang-gong Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9873942Abstract: Methods of vapor deposition include multiple vapor sources. A vapor deposition method includes delivering pulses of a vapor containing a first source chemical to a reaction space from at least two separate source vessels simultaneously. The pulses can contain a substantially consistent concentration of the first source chemical. The method can include purging the reaction space of an excess of the first source chemical after the delivering, and delivering pulses of a vapor containing a second source chemical to the reaction space from at least two separate source vessels simultaneously after the purging.Type: GrantFiled: December 11, 2015Date of Patent: January 23, 2018Assignee: ASM IP Holding B.V.Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang
-
Publication number: 20160097121Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.Type: ApplicationFiled: December 11, 2015Publication date: April 7, 2016Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang
-
Patent number: 9238865Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.Type: GrantFiled: February 6, 2012Date of Patent: January 19, 2016Assignee: ASM IP HOLDING B.V.Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang
-
Patent number: 9139906Abstract: Methods for doping a substrate surface or the interface between two thin films by atomic layer deposition process (ALD) are provided. By blocking some of the available binding sites for a dopant precursor with a blocking reactant, the concentration and uniformity of dopant deposited can be controlled. The blocking reactant may be introduced prior to introduction of the dopant precursor in the ALD process, or the blocking reactant and the dopant precursor can be introduced simultaneously.Type: GrantFiled: February 27, 2008Date of Patent: September 22, 2015Assignee: ASM America, Inc.Inventors: Chang-Gong Wang, Eric Shero
-
Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
Patent number: 8883270Abstract: Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.Type: GrantFiled: August 11, 2010Date of Patent: November 11, 2014Assignee: ASM America, Inc.Inventors: Eric Shero, Petri I. Raisanen, Sung Hoon Jung, Chang-Gong Wang -
Patent number: 8877655Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).Type: GrantFiled: May 6, 2011Date of Patent: November 4, 2014Assignee: ASM America, Inc.Inventors: Eric J. Shero, Petri I. Raisanen, Sung-Hoon Jung, Chang-Gong Wang
-
Patent number: 8563444Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.Type: GrantFiled: July 1, 2011Date of Patent: October 22, 2013Assignee: ASM America, Inc.Inventors: Chang-Gong Wang, Eric Shero, Glen Wilk
-
Publication number: 20130203267Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.Type: ApplicationFiled: February 6, 2012Publication date: August 8, 2013Applicant: ASM IP HOLDING B.V.Inventors: Christophe Pomarede, Eric Shero, Mohith Verghese, Jan Willem Maes, Chang-Gong Wang
-
Publication number: 20110275166Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).Type: ApplicationFiled: May 6, 2011Publication date: November 10, 2011Inventors: Eric J. Shero, Petri I. Raisanen, Sung-Hoon Jung, Chang-Gong Wang
-
Publication number: 20110256735Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.Type: ApplicationFiled: July 1, 2011Publication date: October 20, 2011Applicant: ASM AMERICA, INC.Inventors: Chang-Gong Wang, Eric Shero, Glen Wilk
-
Patent number: 7972977Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.Type: GrantFiled: October 5, 2007Date of Patent: July 5, 2011Assignee: ASM America, Inc.Inventors: Chang-Gong Wang, Eric Shero, Glen Wilk
-
Publication number: 20110070380Abstract: Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.Type: ApplicationFiled: August 11, 2010Publication date: March 24, 2011Inventors: Eric Shero, Petri I. Raisanen, Sung Hoon Jung, Chang-Gong Wang
-
Patent number: 7795160Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).Type: GrantFiled: July 21, 2006Date of Patent: September 14, 2010Assignee: ASM America Inc.Inventors: Chang-gong Wang, Eric J. Shero, Glen Wilk, Jan Willem Maes
-
Publication number: 20090214767Abstract: Methods for doping a substrate surface or the interface between two thin films by atomic layer deposition process (ALD) are provided. By blocking some of the available binding sites for a dopant precursor with a blocking reactant, the concentration and uniformity of dopant deposited can be controlled. The blocking reactant may be introduced prior to introduction of the dopant precursor in the ALD process, or the blocking reactant and the dopant precursor can be introduced simultaneously.Type: ApplicationFiled: February 27, 2008Publication date: August 27, 2009Applicant: ASM America, Inc.Inventors: Chang-gong Wang, Eric Shero
-
Publication number: 20080085610Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.Type: ApplicationFiled: October 5, 2007Publication date: April 10, 2008Applicant: ASM AMERICA, INC.Inventors: Chang-Gong Wang, Eric Shero, Glen Wilk
-
Publication number: 20080020593Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).Type: ApplicationFiled: July 21, 2006Publication date: January 24, 2008Inventors: Chang-gong Wang, Eric J. Shero, Glen Wilk, Jan Willem Maes