Abstract: A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.

Abstract: A method of manufacturing a doped metal chalcogenide thin film includes depositing a dopant atom on a base material; and forming a doped metal chalcogenide thin film on the dopant atom-deposited base material by supplying heat and a reaction gas comprising a metal precursor and a chalcogen precursor to the dopant atom-deposited base material.

Abstract: A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.

Abstract: A method of manufacturing a doped metal chalcogenide thin film includes depositing a dopant atom on a base material; and forming a doped metal chalcogenide thin film on the dopant atom-deposited base material by supplying heat and a reaction gas comprising a metal precursor and a chalcogen precursor to the dopant atom-deposited base material.

Abstract: The present invention relates to the manufacturing of a heteroelement thin film, and particularly to a method for manufacturing a metal chalcogenide thin film and the thin film manufactured thereby. The present invention, which relates to a method for manufacturing a metal chalcogenide thin film, may comprise the steps of: supplying a vaporized metal precursor; supplying a chalcogen-containing gas; and forming a thin film by reacting the metal precursor with the chalcogen-containing gas on a growth substrate at a first temperature condition.

Abstract: The present invention relates to a chalcogenide device and particularly to a metal chalcogenide device using transition metal chalcogenides as electrodes and a production method therefor. The metal chalcogenide device according to the present invention may comprise: a substrate; an oxide layer positioned on the substrate; a first conductive metal chalcogenide layer positioned on the oxide layer; and first and second electrodes, which are positioned apart from one another on the metal chalcogenide layer and comprise metal chalcogenides.

Abstract: The present invention relates to the manufacturing of a heteroelement thin film, and particularly to a method for manufacturing a metal chalcogenide thin film and the thin film manufactured thereby. The present invention, which relates to a method for manufacturing a metal chalcogenide thin film, may comprise the steps of: supplying a vaporized metal precursor; supplying a chalcogen-containing gas; and forming a thin film by reacting the metal precursor with the chalcogen-containing gas on a growth substrate at a first temperature condition.

Abstract: Provided herein is a metal chalcogenide thin film and a method for preparing the metal chalcogenide thin film, the method including forming a metal layer on a substrate; and forming a metal chalcogenide thin film by inserting the substrate into a chamber for low temperature vapor deposition, injecting a gas containing chalcogen atoms and an argon gas into the chamber, generating a plasma such that chalcogen atoms decomposed by the plasma chemically combine with metal atoms constituting the metal layer to form the metal chalcogenide thin film.

Abstract: Force, pressure, or stiffness measurement or calibration can be provided, such as by using a graphene or other sheet membrane, which can provide a specified number of monolayers suspended over a substantially circular well. In an example, the apparatus can include a substrate, including a substantially circular well. A deformable sheet membrane can be suspended over the well. The membrane can be configured to include a specified integer number of one or more monolayers. A storage medium can comprise accompanying information about the suspended membrane or the substrate that, with a deflection displacement response of the suspended membrane to an applied force or pressure, provides a measurement of the applied force or pressure.

Abstract: Force, pressure, or stiffness measurement or calibration can be provided, such as by using a graphene or other sheet membrane, which can provide a specified number of monolayers suspended over a substantially circular well. In an example, the apparatus can include a substrate, including a substantially circular well. A deformable sheet membrane can be suspended over the well. The membrane can be configured to include a specified integer number of one or more monolayers. A storage medium can comprise accompanying information about the suspended membrane or the substrate that, with a deflection displacement response of the suspended membrane to an applied force or pressure, provides a measurement of the applied force or pressure.

Abstract: In accordance with the present invention, an integrated micro steam turbine power plant on-a-chip has been provided. The integrated micro steam turbine power plant on-a-chip of the present invention comprises a miniature electric power generation system fabricated using silicon microfabrication technology and lithographic patterning. The present invention converts heat to electricity by implementing a thermodynamic power cycle on a chip. The steam turbine power plant on-a-chip generally comprises a turbine, a pump, an electric generator, an evaporator, and a condenser. The turbine is formed by a rotatable, disk-shaped rotor having a plurality of rotor blades disposed thereon and a plurality of stator blades. The plurality of stator blades are interdigitated with the plurality of rotor blades to form the turbine. The generator is driven by the turbine and converts mechanical energy into electrical energy.

Abstract: In accordance with the present invention, an integrated micro steam turbine power plant on-a-chip has been provided. The integrated micro steam turbine power plant on-a-chip of the present invention comprises a miniature electric power generation system fabricated using silicon microfabrication technology and lithographic patterning. The present invention converts heat to electricity by implementing a thermodynamic power cycle on a chip. The steam turbine power plant on-a-chip generally comprises a turbine, a pump, an electric generator, an evaporator, and a condenser. The turbine is formed by a rotatable, disk-shaped rotor having a plurality of rotor blades disposed thereon and a plurality of stator blades. The plurality of stator blades are interdigitated with the plurality of rotor blades to form the turbine. The generator is driven by the turbine and converts mechanical energy into electrical energy.