Patents by Inventor Changguo Cheng

Changguo Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra thin channel (UTC) MOSFET structure formed on BOX regions having different depths and different thicknesses beneath the UTC and source/drain regions and method of manufacture thereof
    Patent number: 7812397
    Abstract: A MOSFET structure includes a planar semiconductor substrate, a gate dielectric and a gate. A UT SOI channel extends to a first depth below the top surface of the substrate and is self-aligned to and is laterally coextensive with the gate. Source-drain regions, extend to a second depth greater than the first depth below the top surface, and are self-aligned to the UT channel region. A BOX1 region extends across the entire structure, and vertically from the second depth to a third depth below the top surface. An upper portion of a BOX2 region under the UT channel region is self-aligned to and is laterally coextensive with the gate, and extends vertically from the first depth to a third depth below the top surface, and where the third depth is greater than the second depth.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: October 12, 2010
    Assignee: International Business Machines Corporation
    Inventors: Changguo Cheng, Dureseti Chidambarrao, Brian Joseph Greene, Jack A. Mandelman, Kern Rim