Abstract: The disclosed subject matter is a method to reduce film shedding from components internal to a process chamber. In one example, the method includes forming a dielectric film layer on each of a successive plurality of substrates within the process chamber, and, after a pre-determined number of the successive plurality of substrates have had the dielectric film layers formed thereon, forming an undoped-silicate glass (USG) film on the components internal to the process chamber to passivate accumulated levels of the dielectric film layers. Other devices and methods are disclosed.

Abstract: Disclosed are apparatuses and methods for flowing a reactant process gas into a processing chamber containing a substrate, generating a plasma at a first power level in the processing chamber during the flowing of the reactant process gas, thereby depositing a layer of a material on the substrate by plasma-enhanced chemical vapor deposition, maintaining the plasma while ceasing flowing the reactant process gas into the processing chamber, thereby stopping the depositing, without extinguishing the plasma, adjusting the plasma to a second power level, flowing an inert process gas into the processing chamber, thereby modifying the layer of the material while the plasma is at the second power level, and extinguishing the plasma after the modifying.