Abstract: A semiconductor device includes a substrate including an active region, a gate structure on the substrate, a plurality of channel layers on the active region, spaced apart from each other and surrounded by the gate structure, a source/drain region in a region at which the active region is recessed, on at least one side of the gate structure, and connected to the channel layers, and a contact plug partially recessing the source/drain region from an upper surface of the source/drain region, electrically connected to the source/drain region, and including a metal-semiconductor compound layer along a recessed surface of the source/drain region and a contact conductor layer on the metal-semiconductor compound layer, wherein the metal-semiconductor compound layer has a first thickness on a side surface of the contact conductive layer and a second thickness on a bottom surface of the contact plug, the second thickness being smaller than the first thickness.

Abstract: The present disclosure relates to a composition for alleviating, treating or preventing muscular diseases or improving muscular functions, which contains a Korean mint extract or tilianin as an active ingredient. The Korean mint or tilianin according to the present disclosure has effects of increasing the activity of mTOR, which is involved in muscle protein synthesis, and reducing mRNA expression of MuRF-1 and atrogin-1, which are involved in muscle protein degradation. Accordingly, it can be usefully used for prevention, amelioration or treatment of various muscular diseases such as sarcopenia, muscular atrophy, muscular dystrophy, atony, muscular degeneration, myasthenia, cachexia, etc. by increasing muscle mass and improving muscular functions.

Abstract: A data driving circuit and a display device are provided. A display device includes: a display panel including a plurality of subpixels, each of the plurality of subpixels including: a light-emitting device, and a driving transistor configured to drive the light-emitting device, and a data driving circuit configured to: supply a data voltage to the plurality of subpixels, and supply, in a display period, to at least one subpixel among the plurality of subpixels: the data voltage, obtained by adding a first voltage corresponding to a luminance of the light-emitting device, and a second voltage smaller than a change value of a threshold voltage of the driving transistor.

Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.

Abstract: A semiconductor integrated circuit device including a substrate with a first element region of a P type and a second element region of an N type, a channel active region that extends in the first element region or the second element region, the channel active region including a plurality of channels, a plurality of gate lines that extend in a second direction intersecting and include a gate metal layer, and a gate insulating film in contact with the gate metal layer, a plurality of first spacers on opposite side portions of respective ones of the gate lines, and a plurality of source/drain regions that are between ones of the plurality of gate lines. The channel active region includes a first channel directly on the substrate, and a second channel spaced apart from the first channel and extends into the gate metal layer.

Abstract: A data driving circuit and a display device are provided. A display device includes: a display panel including a plurality of subpixels, each of the plurality of subpixels including: a light-emitting device, and a driving transistor configured to drive the light-emitting device, and a data driving circuit configured to: supply a data voltage to the plurality of subpixels, and supply, in a display period, to at least one subpixel among the plurality of subpixels: the data voltage, obtained by adding a first voltage corresponding to a luminance of the light-emitting device, and a second voltage smaller than a change value of a threshold voltage of the driving transistor.

Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.

Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.

Abstract: The present invention relates to a composition for preventing and treating muscle diseases or improving muscular function, containing a Platycodon grandiflorum extract. More specifically, the present invention relates to: a pharmaceutical composition for preventing and treating muscle diseases, containing a Platycodon grandiflorum extract; a food composition for preventing muscle diseases or improving muscular function; or a cosmetic for improving muscular function. The Platycodon grandiflorum extract of the present invention increases muscle formation by inducing muscular protein synthesis and muscle cell differentiation. Therefore, the extract is a natural product so as to be used safely without side effects, thereby being usable as an active ingredient of a pharmaceutical, food, or cosmetic composition exhibiting an excellent effect in preventing and treating muscle diseases or improving muscular function.

Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.

Abstract: The present invention relates to a composition for preventing and treating muscle diseases or improving muscular function, containing, as an active ingredient, at least one selected from the group consisting of morusin, kuwanon G, and a Mori Cortex Radicis extract. The Mori Cortex Radicis extract, morusin, or kuwanon G, according to the present invention, has an effect of remarkably enhancing muscular function by increasing the expression of p-mTOR protein involved in muscular protein synthesis, inhibiting the expression of mRNAs of MuRF-1 and atrogin-1 involved in muscular protein degradation, and increasing the expression of mRNAs of MyoD and myogenin involved in muscular differentiation. In addition, the present invention is a natural product so as to be used safely without side effects, thereby being usable in drugs, food, or cosmetics.

Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.

Abstract: A display and degradation sensing method, includes a display panel having a plurality of pixels that each comprise an Organic Light Emitting Diode (OLED) and Thin Film Transistor (TFT). The pixels are divided into multiple pixel groups of two or more pixels, each connected to different data lines but to the same gate and sensing lines. A gate driving circuit supplies a scan control signal to the gate line. A data driving circuit selectively supplies turn-on driving data voltage and turn-off data voltage to the data lines in sync with the scan control signal; a sensing circuit outputs (i) a first sensing value based upon an OLED threshold voltage of a sensing pixel, and (ii) a second sensing value based upon a kickback current. A sensing value correction circuit determines a final sensing value for the OLED threshold voltage based on the first sensing value and the second sensing value.

Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.

Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.

Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.

Abstract: The present invention relates to a composition for preventing and treating muscle diseases or improving muscular function, containing a Platycodon grandiflorum extract. More specifically, the present invention relates to: a pharmaceutical composition for preventing and treating muscle diseases, containing a Platycodon grandiflorum extract; a food composition for preventing muscle diseases or improving muscular function; or a cosmetic for improving muscular function. The Platycodon grandiflorum extract of the present invention increases muscle formation by inducing muscular protein synthesis and muscle cell differentiation. Therefore, the extract is a natural product so as to be used safely without side effects, thereby being usable as an active ingredient of a pharmaceutical, food, or cosmetic composition exhibiting an excellent effect in preventing and treating muscle diseases or improving muscular function.

Abstract: The present invention relates to a composition for preventing and treating muscle diseases or improving muscular function, containing, as an active ingredient, at least one selected from the group consisting of morusin, kuwanon G, and a Mori Cortex Radicis extract. The Mori Cortex Radicis extract, morusin, or kuwanon G, according to the present invention, has an effect of remarkably enhancing muscular function by increasing the expression of p-mTOR protein involved in muscular protein synthesis, inhibiting the expression of mRNAs of MuRF-1 and atrogin-1 involved in muscular protein degradation, and increasing the expression of mRNAs of MyoD and myogenin involved in muscular differentiation. In addition, the present invention is a natural product so as to be used safely without side effects, thereby being usable in drugs, food, or cosmetics.

Abstract: A display and degradation sensing method, includes a display panel having a plurality of pixels that each comprise an Organic Light Emitting Diode (OLED) and Thin Film Transistor (TFT). The pixels are divided into multiple pixel groups of two or more pixels, each connected to different data lines but to the same gate and sensing lines. A gate driving circuit supplies a scan control signal to the gate line. A data driving circuit selectively supplies turn-on driving data voltage and turn-off data voltage to the data lines in sync with the scan control signal; a sensing circuit outputs (i) a first sensing value based upon an OLED threshold voltage of a sensing pixel, and (ii) a second sensing value based upon a kickback current. A sensing value correction circuit determines a final sensing value for the OLED threshold voltage based on the first sensing value and the second sensing value.

Abstract: An organic light emitting display includes a display panel including a plurality of pixels, each of the plurality of pixels including an organic light emitting diode (OLED) and a driving thin film transistor (TFT) to control an emission amount of the OLED, the plurality of pixels connected to respective sensing lines; and at least one sensing unit connected to a corresponding one of the pixels through the respective sensing line, the at least one sensing unit configured to sense an amount of carriers accumulated in a parasitic capacitor of the OLED of the corresponding one of the pixels when a driving current flows in the OLED, the at least one sensing unit thereby sensing a degradation of the OLED.