Patents by Inventor Changhee Kim
Changhee Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240141228Abstract: A quantum dot composition includes a quantum dot, and a ligand bonded to a surface of the quantum dot, wherein the ligand includes a head portion bonded to the surface of the quantum dot and containing a polar solvent dissociative functional group, and a tail portion connected to the head portion. A quantum dot composition according to an embodiment is used to form an emission layer of a light emitting element to enhance luminous efficiency of the light emitting element including an emission layer formed through the quantum dot composition.Type: ApplicationFiled: January 8, 2024Publication date: May 2, 2024Inventors: Changhee LEE, Dukki KIM, Hyojin KO, Sehun KIM, Jaehoon KIM, Hyunmi DOH, Yunku JUNG, Jaekook HA
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Patent number: 11967804Abstract: An ionic wind generator and an electronic device having a heat dissipation function using the same are proposed. The ionic wind generator includes a power module; a first electrode configured to receive power from the power module by being connected to the power module to become an emitter electrode; and a second electrode spaced apart from the first electrode and grounded and at the same time connected to the power module to become a counter electrode. In addition, the first electrode is configured as a carbon brush including multiple carbon fibers. Accordingly, in the ionic wind generator, the emitter electrode is configured as the carbon brush having multiple carbon fibers.Type: GrantFiled: April 13, 2022Date of Patent: April 23, 2024Assignee: LG ELECTRONICS INC.Inventors: BongJun Kim, Jae Hyun Oh, Changhee Lee, MinWoo Jeong, Minjae Park
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Patent number: 11959001Abstract: A quantum dot composition includes a quantum dot having a surface to which a ligand is bonded, and a thermal decomposition auxiliary compound. The quantum dot composition may be applied to an emission layer of a light emitting element and a display device, thereby improving luminous efficiency of the light emitting element and the display device.Type: GrantFiled: March 25, 2021Date of Patent: April 16, 2024Assignee: Samsung Display Co., Ltd.Inventors: Changhee Lee, Sehun Kim, Hyojin Ko, Dukki Kim, Jaehoon Kim, Hyunmi Doh, Yunku Jung, Jaekook Ha
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Patent number: 11955468Abstract: Provided is a light emitting element according to embodiments which includes a body including a semiconductor layer and an active layer, and a ligand including a head portion bonded to a surface of the body, an end portion spaced apart from the body, and having a positive or a negative charge, and a chain portion connecting the head portion and the end portion.Type: GrantFiled: July 17, 2020Date of Patent: April 9, 2024Assignee: Samsung Display Co., Ltd.Inventors: Yunku Jung, Sungwoon Kim, Changhee Lee, Jaekook Ha, Yunhyuk Ko, Jaehoon Kim, Minki Nam, Hyunmi Doh, Myoungjin Park, Jae Hong Park, Junwoo Park
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Patent number: 11741906Abstract: A data driving circuit and a display device are provided. A display device includes: a display panel including a plurality of subpixels, each of the plurality of subpixels including: a light-emitting device, and a driving transistor configured to drive the light-emitting device, and a data driving circuit configured to: supply a data voltage to the plurality of subpixels, and supply, in a display period, to at least one subpixel among the plurality of subpixels: the data voltage, obtained by adding a first voltage corresponding to a luminance of the light-emitting device, and a second voltage smaller than a change value of a threshold voltage of the driving transistor.Type: GrantFiled: December 22, 2021Date of Patent: August 29, 2023Assignee: LG Display Co., Ltd.Inventors: Changhee Kim, Kimin Son
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Patent number: 11682698Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.Type: GrantFiled: December 3, 2021Date of Patent: June 20, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Junghan Lee, Changhee Kim, Kihwan Kim, Suhyueon Park, Jaehong Choi
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Publication number: 20220399331Abstract: A semiconductor integrated circuit device including a substrate with a first element region of a P type and a second element region of an N type, a channel active region that extends in the first element region or the second element region, the channel active region including a plurality of channels, a plurality of gate lines that extend in a second direction intersecting and include a gate metal layer, and a gate insulating film in contact with the gate metal layer, a plurality of first spacers on opposite side portions of respective ones of the gate lines, and a plurality of source/drain regions that are between ones of the plurality of gate lines. The channel active region includes a first channel directly on the substrate, and a second channel spaced apart from the first channel and extends into the gate metal layer.Type: ApplicationFiled: December 24, 2021Publication date: December 15, 2022Inventors: Changhee KIM, Kyungsoo KIM, Dongil BAE, Sungman WHANG
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Publication number: 20220208116Abstract: A data driving circuit and a display device are provided. A display device includes: a display panel including a plurality of subpixels, each of the plurality of subpixels including: a light-emitting device, and a driving transistor configured to drive the light-emitting device, and a data driving circuit configured to: supply a data voltage to the plurality of subpixels, and supply, in a display period, to at least one subpixel among the plurality of subpixels: the data voltage, obtained by adding a first voltage corresponding to a luminance of the light-emitting device, and a second voltage smaller than a change value of a threshold voltage of the driving transistor.Type: ApplicationFiled: December 22, 2021Publication date: June 30, 2022Applicant: LG DISPLAY CO., LTD.Inventors: Changhee KIM, Kimin SON
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Publication number: 20220093739Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.Type: ApplicationFiled: December 3, 2021Publication date: March 24, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Junghan LEE, Changhee KIM, Kihwan KIM, Suhyueon PARK, Jaehong CHOI
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Patent number: 11211454Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.Type: GrantFiled: March 17, 2020Date of Patent: December 28, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Junghan Lee, Changhee Kim, Kihwan Kim, Suhyueon Park, Jaehong Choi
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Patent number: 10960040Abstract: The present invention relates to a composition for preventing and treating muscle diseases or improving muscular function, containing a Platycodon grandiflorum extract. More specifically, the present invention relates to: a pharmaceutical composition for preventing and treating muscle diseases, containing a Platycodon grandiflorum extract; a food composition for preventing muscle diseases or improving muscular function; or a cosmetic for improving muscular function. The Platycodon grandiflorum extract of the present invention increases muscle formation by inducing muscular protein synthesis and muscle cell differentiation. Therefore, the extract is a natural product so as to be used safely without side effects, thereby being usable as an active ingredient of a pharmaceutical, food, or cosmetic composition exhibiting an excellent effect in preventing and treating muscle diseases or improving muscular function.Type: GrantFiled: May 26, 2016Date of Patent: March 30, 2021Assignee: NEWTREE CO., LTD.Inventors: Jae-Kwan Hwang, Mi-Bo Kim, Changhee Kim, Doun Kim, Heechul Chung
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Publication number: 20210066455Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.Type: ApplicationFiled: March 17, 2020Publication date: March 4, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Junghan LEE, Changhee KIM, Kihwan KIM, Suhyueon PARK, Jaehong CHOI
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Patent number: 10576057Abstract: The present invention relates to a composition for preventing and treating muscle diseases or improving muscular function, containing, as an active ingredient, at least one selected from the group consisting of morusin, kuwanon G, and a Mori Cortex Radicis extract. The Mori Cortex Radicis extract, morusin, or kuwanon G, according to the present invention, has an effect of remarkably enhancing muscular function by increasing the expression of p-mTOR protein involved in muscular protein synthesis, inhibiting the expression of mRNAs of MuRF-1 and atrogin-1 involved in muscular protein degradation, and increasing the expression of mRNAs of MyoD and myogenin involved in muscular differentiation. In addition, the present invention is a natural product so as to be used safely without side effects, thereby being usable in drugs, food, or cosmetics.Type: GrantFiled: November 27, 2017Date of Patent: March 3, 2020Assignee: NEWTREE CO., LTD.Inventors: Jae-Kwan Hwang, Mi-Bo Kim, Changhee Kim, Doun Kim, Heechul Chung
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Patent number: 10559673Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.Type: GrantFiled: February 25, 2019Date of Patent: February 11, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sungil Park, Changhee Kim, Yunil Lee, Mirco Cantoro, Junggun You, Donghun Lee
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Patent number: 10446621Abstract: A display and degradation sensing method, includes a display panel having a plurality of pixels that each comprise an Organic Light Emitting Diode (OLED) and Thin Film Transistor (TFT). The pixels are divided into multiple pixel groups of two or more pixels, each connected to different data lines but to the same gate and sensing lines. A gate driving circuit supplies a scan control signal to the gate line. A data driving circuit selectively supplies turn-on driving data voltage and turn-off data voltage to the data lines in sync with the scan control signal; a sensing circuit outputs (i) a first sensing value based upon an OLED threshold voltage of a sensing pixel, and (ii) a second sensing value based upon a kickback current. A sensing value correction circuit determines a final sensing value for the OLED threshold voltage based on the first sensing value and the second sensing value.Type: GrantFiled: August 24, 2017Date of Patent: October 15, 2019Assignee: LG DISPLAY CO., LTD.Inventors: Changhee Kim, Hyemin Park
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Publication number: 20190189778Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.Type: ApplicationFiled: February 25, 2019Publication date: June 20, 2019Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sungil PARK, Changhee KIM, Yunil LEE, Mirco CANTORO, Junggun YOU, Donghun LEE
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Patent number: 10256324Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.Type: GrantFiled: July 31, 2017Date of Patent: April 9, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sungil Park, Changhee Kim, Yunil Lee, Mirco Cantoro, Junggun You, Donghun Lee
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Publication number: 20180248018Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.Type: ApplicationFiled: July 31, 2017Publication date: August 30, 2018Inventors: Sungil Park, Changhee Kim, Yunil Lee, Mirco Cantoro, Junggun You, Donghun Lee
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Publication number: 20180193396Abstract: The present invention relates to a composition for preventing and treating muscle diseases or improving muscular function, containing a Platycodon grandiflorum extract. More specifically, the present invention relates to: a pharmaceutical composition for preventing and treating muscle diseases, containing a Platycodon grandiflorum extract; a food composition for preventing muscle diseases or improving muscular function; or a cosmetic for improving muscular function. The Platycodon grandiflorum extract of the present invention increases muscle formation by inducing muscular protein synthesis and muscle cell differentiation. Therefore, the extract is a natural product so as to be used safely without side effects, thereby being usable as an active ingredient of a pharmaceutical, food, or cosmetic composition exhibiting an excellent effect in preventing and treating muscle diseases or improving muscular function.Type: ApplicationFiled: May 26, 2016Publication date: July 12, 2018Inventors: Jae-Kwan Hwang, Mi-Bo Kim, Changhee Kim, Doun Kim, Heechul Chung
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Publication number: 20180153852Abstract: The present invention relates to a composition for preventing and treating muscle diseases or improving muscular function, containing, as an active ingredient, at least one selected from the group consisting of morusin, kuwanon G, and a Mori Cortex Radicis extract. The Mori Cortex Radicis extract, morusin, or kuwanon G, according to the present invention, has an effect of remarkably enhancing muscular function by increasing the expression of p-mTOR protein involved in muscular protein synthesis, inhibiting the expression of mRNAs of MuRF-1 and atrogin-1 involved in muscular protein degradation, and increasing the expression of mRNAs of MyoD and myogenin involved in muscular differentiation. In addition, the present invention is a natural product so as to be used safely without side effects, thereby being usable in drugs, food, or cosmetics.Type: ApplicationFiled: November 27, 2017Publication date: June 7, 2018Inventors: Jae-Kwan HWANG, Mi-Bo KIM, Changhee KIM, Doun KIM, Heechul CHUNG