Abstract: A lens assembly and AR glasses, including a lens, a sensing assembly, and one or more conducting assemblies. The sensing assembly is arranged on a first side of the lens. The conducting assemblies are arranged on the first side of the lens. Each conducting assembly comprises a transparent conductive layer, and a metal mesh layer. Wherein, the transparent conductive layer is placed on the first side of the lens. The metal mesh layer is placed on a side of the transparent conductive layer away from the lens. The metal mesh layer comprises a plurality of metal wires arranged at intervals. The plurality of the metal wires are electrically connected to the sensing assembly. The AR glasses includes a frame, and the lens assembly. The lens assembly is mounted on the frame.

Abstract: This application provides a display module and a wearable display device, the display module comprises a light emitting module and a conducting module. The light emitting module comprises a display assembly, a first optical waveguide, and a polarizer arranged in sequence in a first direction, the light emitting module further comprises a light emitting unit, the light emitting unit is configured to emit a first light to the first optical waveguide; the first light is transmitted to the display assembly through the first optical waveguide, the display assembly is configured to reflect the first light to form a second light, and the second light passes through the first optical waveguide and the polarizer to form a third light. The conducting module comprises a second optical waveguide. The second optical waveguide is configured to receive the third light and guide the third light to emit the second optical waveguide.

Abstract: A display panel includes a substrate and a plurality of pixels on the substrate. Each of the plurality of pixels includes a plurality of sub-pixels coaxially stacked. Each of the plurality of sub-pixels includes a conductive layer, a light-emitting layer connected to the conductive layer, and a base layer. The plurality of pixels arranged in an array on a plane vertical to a stacking direction of the plurality of sub-pixels. The conductive layer is configured to transmit electrical signal. The light-emitting layer is configured to emit light according to the electrical signal. The base layers of the sub-pixels with a same sequence along the stacking direction are connected with each other.

Abstract: A lens assembly and AR glasses, including a lens, a sensing assembly, and one or more conducting assemblies. The sensing assembly is arranged on a first side of the lens. The conducting assemblies are arranged on the first side of the lens. Each conducting assembly comprises a transparent conductive layer, and a metal mesh layer. Wherein, the transparent conductive layer is placed on the first side of the lens. The metal mesh layer is placed on a side of the transparent conductive layer away from the lens. The metal mesh layer comprises a plurality of metal wires arranged at intervals. The plurality of the metal wires are electrically connected to the sensing assembly. The AR glasses includes a frame, and the lens assembly. The lens assembly is mounted on the frame.

Abstract: A lens assembly and Augmented Reality (AR) glasses, including a waveguide substrate, a wiring layer, a protective layer, an eye tracking component, and a lens. The waveguide substrate includes a first surface. The wiring layer is disposed on the first surface. The protective layer is disposed on the first surface and covering the wiring layer. The eye tracking component is disposed in the protective layer and is electrically connected with the wiring layer for tracking position of an eyeball. The lens is connected to a side of the protective layer away from the waveguide substrate. The AR glasses includes a display device and two lens assemblies. The display device is positioned between the two lens assemblies for emitting image light to the waveguide substrates of the two lens assemblies.

Abstract: A lens assembly and Augmented Reality (AR) glasses, including a waveguide substrate, a wiring layer, a protective layer, an eye tracking component, and a lens. The waveguide substrate includes a first surface. The wiring layer is disposed on the first surface. The protective layer is disposed on the first surface and covering the wiring layer. The eye tracking component is disposed in the protective layer and is electrically connected with the wiring layer for tracking position of an eyeball. The lens is connected to a side of the protective layer away from the waveguide substrate. The AR glasses includes a display device and two lens assemblies. The display device is positioned between the two lens assemblies for emitting image light to the waveguide substrates of the two lens assemblies.

Abstract: A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.

Abstract: A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.

Abstract: An illumination device comprising a reflector and a light source module is provided. The light source module comprises a column, a first light-emitting diode (LED) light source, and a second LED light source. The column has a front end and a side. The first LED light source fixed to the front end of the column is configured to emit a first light beam for forming a first illumination area on a projection plane. The second LED light source fixed to the side of the column is configured to emit a second light beam for forming a second illumination area partly overlapping the first illumination area on the projection plane.

Abstract: A light source module comprising a substrate and a light-emitting diode (LED) array is provided. The LED array comprises a first LED sub-array, a second LED sub-array, and a third LED sub-array disposed on the substrate along a horizontal axis. The first LED sub-array is configured to emit a first light beam. The second LED sub-array is configured to emit a second light beam. The third LED sub-array disposed between the first and second LED sub-arrays is configured to emit a third light beam. The first, second, and third light beams jointly forms a light area. Luminance of the third light beam is less than luminance of the first light beam or luminance of the second light beam.

Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.

Abstract: A vertical light emitting diodes (LEDs) with new construction for reducing the current crowding effect and increasing the light extraction efficiency (LEE) of the LEDs is provided. By providing at least one current blocking portion corresponded to an electrode, the current flows from the electrode may be diffused or distributed more laterally instead of straight downward directly under the electrode and the current crowding effect could be reduced thereby. By providing at least one current blocking portion covered by a mirror layer to form an omni-directional reflective (ODR) structure, the internal light of the LEDs may be reflected by the ODR structure and the LEE could be increased thereby.

Abstract: A method for fabricating a light emitting diode (LED) chip is provided. First, a substrate is provided. A buffer layer is formed on the substrate. The buffer layer is patterned to form a plurality of recesses on a surface thereof. A first type semiconductor layer is formed on the surface of the buffer layer. A portion of the surface where the first type semiconductor layer and the buffer layer are in contact constitutes a bonding surface, and voids exist between the buffer layer and the first type semiconductor layer. An active layer and a second type semiconductor layer are formed on the first type semiconductor layer in sequence. A second electrode is formed on the second type semiconductor layer. A lift-off process is performed to separate the first type semiconductor layer and the buffer layer.

Abstract: A white light emitting diode device (white LED device) is provided. The white LED device includes an LED chip and a phosphor. A first light beam with wavelength between about 380 nm and about 450 nm is emitted from the LED chip. The phosphor is distributed in the range of the first light beam, wherein the phosphor is excited by the first light beam to emit a second light beam with wavelength between about 560 nm and about 580 nm. The first light beam and the second light beam are mixed to produce white light. The white LED device provides excellent light emitting efficiency and color rendering property, and has low manufacturing cost.