Patents by Inventor Chang-Hwa Kim
Chang-Hwa Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128555Abstract: A secondary battery having improved impact resistance is provided. The secondary battery includes a battery case comprising an electrode assembly and an electrolyte accommodated in an accommodation part of the battery case. The secondary battery satisfies following Equation (1): Equation (1): W/S?42. In Equation (1), W is an amount of electrolyte per unit capacity of the secondary battery [unit: g/Ah], and S is a product of a total length [unit: m] and a full width [unit: m] of the electrode assembly.Type: ApplicationFiled: October 13, 2023Publication date: April 18, 2024Applicant: LG Energy Solution, Ltd.Inventors: Hyun Jin Kim, Yeon Hwa Wi, Chang Ho Kim, Seon Uk Kim, Jae Min Kim
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Publication number: 20240114674Abstract: A semiconductor memory device includes a substrate; a bit-line on the substrate and extending in a first direction; first and second channel patterns on the bit-line; the second channel pattern being spaced apart from the first channel pattern in the first direction; a first word-line between the first and second channel patterns and extending in a second direction that intersects the first direction; a second word-line between the first and second channel patterns, extending in the second direction, and being spaced apart from the first word-line in the first direction; capacitors on and connected to the channel patterns; wherein the first and second channel patterns include first and second metal oxide patterns sequentially on the bit-line, each of the first and second metal oxide patterns include an amorphous metal oxide, and a composition of the first metal oxide pattern is different from a composition of the second metal oxide pattern.Type: ApplicationFiled: June 21, 2023Publication date: April 4, 2024Inventors: Jae Won NA, Chang Sik KIM, Jun Hwa SONG, Ji Hee JUN
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Solution composition for surface treatment of steel sheet and surface-treated steel sheet using same
Patent number: 11939489Abstract: Provided is a composition for surface treatment of a steel sheet, the composition having excellent resistance to an acid, such as sulfuric acid, and to a coated steel sheet to which the composition for surface treatment is applied, wherein the composition for surface treatment comprises 30-50% wt % of colloidal silica containing 5-20 nm-sized silica, 40-60% wt % of silane containing three or more alkoxy groups, 5-15 wt % of an acrylate-based organic monomer, 0.01-1 wt % of an acid, and 1-15 wt % of a solvent.Type: GrantFiled: September 28, 2017Date of Patent: March 26, 2024Assignees: POSCO CO., LTD, NOROO COIL COATINGS CO., LTD.Inventors: Chang-Hoon Choi, Dong-Yun Kim, Min-Ho Jo, Jae-Duck Ko, Won-Ho Son, Jong-Hwa Kim -
Patent number: 11935835Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.Type: GrantFiled: December 14, 2020Date of Patent: March 19, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Hyo-Jin Kim, Chang-Hwa Kim, Hwi-Chan Jun, Chul-Hong Park, Jae-Seok Yang, Kwan-Young Chun
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Publication number: 20240074258Abstract: An electronic device includes a display device, which may be fabricated using a described method. The display device includes a glass substrate including a first surface, a second surface opposite the first surface, and a side surface between the first surface and the second surface, an outermost structure on the first surface of the glass substrate and located adjacent to an edge of one side of the glass substrate, and a display area including a plurality of light emitting areas on the first surface of the glass substrate and located farther from the edge of the one side of the glass substrate than the outermost structure is. A minimum distance from the side surface of the glass substrate to the outermost structure is equal to 130 ?m or less.Type: ApplicationFiled: May 5, 2023Publication date: February 29, 2024Inventors: Wan Jung KIM, Dong Jo KIM, Sun Hwa KIM, Young Ji KIM, Chang Sik KIM, Kyung Ah NAM, Hyo Young MUN, Yong Seung PARK, Yi Seul UM, Dae Sang YUN, Kwan Hee LEE, So Young LEE, Young Hoon LEE, Young Seo CHOI, Sun Young KIM, Ji Won SOHN, Do Young LEE, Seung Hoon LEE
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Patent number: 11818904Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.Type: GrantFiled: July 12, 2021Date of Patent: November 14, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Min Jun Choi, Kwan Sik Kim, Chang Hwa Kim, Sang Su Park, Man Geun Cho
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Patent number: 11798850Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.Type: GrantFiled: August 10, 2021Date of Patent: October 24, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hwi Chan Jun, Chang Hwa Kim, Dae Won Ha
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Patent number: 11594577Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.Type: GrantFiled: November 5, 2021Date of Patent: February 28, 2023Inventors: Gwi-Deok Ryan Lee, Jung Hun Kim, Chang Hwa Kim, Sang Su Park, Sang Hoon Uhm, Beom Suk Lee, Tae Yon Lee, Dong Mo Im
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Publication number: 20220059621Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.Type: ApplicationFiled: November 5, 2021Publication date: February 24, 2022Inventors: Gwi-Deok Ryan LEE, Jung Hun KIM, Chang Hwa KIM, Sang Su PARK, Sang Hoon UHM, Beom Suk LEE, Tae Yon LEE, Dong Mo IM
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Patent number: 11205683Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.Type: GrantFiled: February 11, 2020Date of Patent: December 21, 2021Inventors: Kwan Sik Kim, Jin Hyung Kim, Chang Hwa Kim, Hong Ki Kim, Sang-Su Park, Beom Suk Lee, Jae Sung Hur
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Publication number: 20210375692Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.Type: ApplicationFiled: August 10, 2021Publication date: December 2, 2021Inventors: HWI CHAN JUN, Chang Hwa Kim, Dae Won Ha
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Patent number: 11177322Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.Type: GrantFiled: October 22, 2019Date of Patent: November 16, 2021Inventors: Gwi-Deok Ryan Lee, Jung Hun Kim, Chang Hwa Kim, Sang Su Park, Sang Hoon Uhm, Beom Suk Lee, Tae Yon Lee, Dong Mo Im
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Publication number: 20210343790Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.Type: ApplicationFiled: July 12, 2021Publication date: November 4, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Min Jun CHOI, Kwan Sik KIM, Chang Hwa KIM, Sang Su PARK, Man Geun CHO
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Publication number: 20210327930Abstract: An image sensor includes a substrate which includes a plurality of unit pixels. Each of the plurality of unit pixels includes a photoelectric conversion layer. A pixel separation pattern is disposed in the substrate and has a and shape that includes a plurality of grid points. The pixel separation pattern is configured to separate each of the plurality of unit pixels from each other. A support structure is disposed in the substrate and is positioned to correspond to the plurality of grid points of the pixel separation pattern. The support structure is configured to support adjacent unit pixels of the plurality of unit pixels.Type: ApplicationFiled: December 21, 2020Publication date: October 21, 2021Inventors: KangMook LIM, Yeo Seon CHOI, Sung In KIM, Chang Hwa KIM
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Patent number: 11094593Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.Type: GrantFiled: October 24, 2018Date of Patent: August 17, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hwi Chan Jun, Chang Hwa Kim, Dae Won Ha
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Patent number: 11063090Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.Type: GrantFiled: April 23, 2019Date of Patent: July 13, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Min Jun Choi, Kwan Sik Kim, Chang Hwa Kim, Sang Su Park, Man Geun Cho
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Publication number: 20210098377Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.Type: ApplicationFiled: December 14, 2020Publication date: April 1, 2021Inventors: Hyo-Jin KIM, Chang-Hwa KIM, Hwi-Chan JUN, Chul-Hong PARK, Jae-Seok YANG, Kwan-Young CHUN
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Patent number: 10916587Abstract: An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.Type: GrantFiled: June 17, 2019Date of Patent: February 9, 2021Inventors: Tae Yon Lee, Chang Hwa Kim, Jae Ho Kim, Sang Chun Park, Gwi Deok Ryan Lee, Beom Suk Lee, Jae Kyu Lee, Kazunori Kakehi
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Patent number: 10886227Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.Type: GrantFiled: December 12, 2018Date of Patent: January 5, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyo-Jin Kim, Chang-Hwa Kim, Hwi-Chan Jun, Chui-Hong Park, Jae-Seok Yang, Kwan-Young Chun
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Patent number: RE49923Abstract: A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and first and second internal electrodes disposed to face each other with respective dielectric layers interposed therebetween; and first and second external electrodes disposed on an external surface of the ceramic body, wherein the dielectric layer contains a barium titanate-based powder particle having a core-shell structure including a core and a shell around the core, the shell having a structure in which titanium is partially substituted with an element having the same oxidation number as that of the titanium in the barium titanate-based powder particle and having an ionic radius different from that of the titanium in the barium titanate-based powder particle, and the shell covers at least 30% of a surface of the core.Type: GrantFiled: June 22, 2021Date of Patent: April 16, 2024Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Jin Woo Kim, Jong Ho Lee, Min Gi Sin, Hak Kwan Kim, Chin Mo Kim, Chi Hwa Lee, Hong Seok Kim, Woo Sup Kim, Chang Hwa Park