Abstract: A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.

Abstract: A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.

Abstract: A fin field effect transistor includes a first fin structure and a second fin structures both protruding from a substrate, first and second gate electrodes on the first and second fin structures, respectively, and a gate dielectric layer between each of the first and second fin structures and the first and second gate electrodes, respectively. Each of the first and second fin structures includes a buffer pattern on the substrate, a channel pattern on the buffer pattern, and an etch stop pattern provided between the channel pattern and the substrate. The etch stop pattern includes a material having an etch resistivity greater than that of the buffer pattern.

Abstract: Provided is a semiconductor device comprising a substrate including a first area and a second area, first through third crystalline layers sequentially stacked on the first area and having first through third lattice constants, respectively, a first gate electrode formed on the third crystalline layer, fourth and fifth crystalline layers sequentially stacked on the second area and having fourth and fifth lattice constants, respectively, and a second gate electrode formed on the fifth crystalline layer, wherein the third lattice constant is greater than the second lattice constant, the second lattice constant is greater than the first lattice constant, and the fifth lattice constant is smaller than the fourth lattice constant.

Abstract: A fin field effect transistor includes a first fin structure and a second fin structures both protruding from a substrate, first and second gate electrodes on the first and second fin structures, respectively, and a gate dielectric layer between each of the first and second fin structures and the first and second gate electrodes, respectively. Each of the first and second fin structures includes a buffer pattern on the substrate, a channel pattern on the buffer pattern, and an etch stop pattern provided between the channel pattern and the substrate. The etch stop pattern includes a material having an etch resistivity greater than that of the buffer pattern.

Abstract: Provided is a semiconductor device comprising a substrate including a first area and a second area, first through third crystalline layers sequentially stacked on the first area and having first through third lattice constants, respectively, a first gate electrode formed on the third crystalline layer, fourth and fifth crystalline layers sequentially stacked on the second area and having fourth and fifth lattice constants, respectively, and a second gate electrode formed on the fifth crystalline layer, wherein the third lattice constant is greater than the second lattice constant, the second lattice constant is greater than the first lattice constant, and the fifth lattice constant is smaller than the fourth lattice constant.

Abstract: A transistor and a method of manufacturing the same are disclosed. The transistor includes a first epitaxial layer, a channel layer, a gate structure and an impurity region. The first epitaxial layer on a substrate includes a silicon-germanium-tin (SixGe1-x-ySny) single crystal having a lattice constant greater than a lattice constant of a germanium (Ge) single crystal. The channel layer is disposed adjacent to the first epitaxial layer. The channel layer includes the germanium single crystal. The gate structure is disposed on the channel layer. The impurity region is disposed at an upper portion of the channel layer adjacent to the gate structure.