Abstract: The invention relates to the field of tobacco breeding, particularly to a tobacco plant resistant to TSWD without linkage drag and a method for breeding the same. Provided is a tobacco plant or germplasm resistant to TSWD, which comprises a short RTSW introgressed segment, wherein at least part or entire of the sequence set forth in SEQ ID No. 34 is deleted in the short RTSW introgressed segment as compared to the RTSW introgressed segment of tobacco ‘Polata’. Also provided is a method for screening said tobacco plant or germplasm, in which a tobacco plant or germplasm resistant to TSWD carrying a short RTSW introgressed segment is obtained by detecting NaChr4_2M, NaChr4_8M, NaChr3_62.6M and NaChr3_64.6M linkage drag locus markers. Compared with ‘Polalta’, the tobacco plant or germplasm provided by the invention not only has TSWD resistance, but also reduces or removes linkage drag.

Abstract: A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.

Abstract: This invention provides a tomato zonate spot virus detection reagent. Optimized gene encoding N protein of TZSV is expressed and purified to obtain N protein of TZSV, and two specific hybridoma cell lines are obtained, from which specific anti-TZSV monoclonal antibody could be obtained, respectively. Test strip for detecting tomato zonate spot virus is prepared with the monoclonal antibody. It is proven by experiments that the test strip of this invention is specific for TZSV, and can realize rapid detection of TZSV in leaves and other samples, with high sensitivity and convenient operation.

Abstract: A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.

Abstract: A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.

Abstract: A TMV resistant tobacco plant containing a short N introgressed segment and a method for breeding the same. A homozygous tobacco plant containing an N introgressed segment is hybridized with a tobacco plant of genotype nn to obtain an F1 progeny tobacco plant of genotype Nn. The F1 progeny tobacco plant is hybridized with the tobacco plant of genotype nn, to obtain population materials for screening to obtain the short N introgressed segment. TMV is inoculated at a seedling stage, and Nn genotype plants showing necrotic lesion are obtained by screening the population materials. The Nn genotype plants are genotyped using a molecular marker TN5.51 primer pair and an N gene-specific molecular marker N1N2 at the right end of the N introgressed segment. A plant found to be negative when tested by the TN5.51 primer pair and to be positive when tested by the N1N2 molecular marker is a plant comprising the short N introgressed segment.

Abstract: A semiconductor device includes a voltage input circuit node and a ground voltage node. A first transistor is coupled between the voltage input circuit node and the ground voltage node. A triggering circuit is coupled between the voltage input circuit node and the ground voltage node in parallel with the first transistor. The triggering circuit includes a trigger diode. An output of the triggering circuit is coupled to a control terminal of the first transistor. A load is powered by coupling the load between the voltage input circuit node and the ground voltage node.

Abstract: A semiconductor device includes a voltage input circuit node and a ground voltage node. A first transistor is coupled between the voltage input circuit node and the ground voltage node. A triggering circuit is coupled between the voltage input circuit node and the ground voltage node in parallel with the first transistor. The triggering circuit includes a trigger diode. An output of the triggering circuit is coupled to a control terminal of the first transistor. A load is powered by coupling the load between the voltage input circuit node and the ground voltage node.

Abstract: The disclosure provides a loss-of-function gene of eIFiso4E-S. The loss-of-function gene is resistant to tobacco vein banding mosaic virus (TVBMV) and represented by the sequence of SEQ ID NO: 1.

Abstract: A TMV resistant tobacco plant containing a short N introgressed segment and a method for breeding the same. A homozygous tobacco plant containing an N introgressed segment is hybridized with a tobacco plant of genotype nn to obtain an F1 progeny tobacco plant of genotype Nn. The F1 progeny tobacco plant is hybridized with the tobacco plant of genotype nn, to obtain population materials for screening to obtain the short N introgressed segment. TMV is inoculated at a seedling stage, and Nn genotype plants showing necrotic lesion are obtained by screening the population materials. The Nn genotype plants are genotyped using a molecular marker TN5.51 primer pair and an N gene-specific molecular marker N1N2 at the right end of the N introgressed segment. A plant found to be negative when tested by the TN5.51 primer pair and to be positive when tested by the N1N2 molecular marker is a plant comprising the short N introgressed segment.

Abstract: The invention relates to the isolation and the cloning and breeding application of a tobacco mosaic virus (TMV) resistant N?au gene. The invention discloses the nucleotide sequence of the TMV resistant N?au gene shown as SEQ ID NO.1. The amino acids of polypeptide encoded by the TMV resistant N?au gene are shown as SEQ ID NO.2. A non-transgenic TMV resistant tobacco variety can be obtained by transferring an N?au gene which is contained by germplasm resources into a TMV infected popular tobacco variety by conventional breeding means. The N?au gene of the invention has a homologous sequence with high identity rate of nucleotides in the popular tobacco variety, so that it is easy to obtain a shorter introgression segment single plant carrying the N?au gene by conventional breeding, and thereby to obtain a TMV resistant variety with lower linkage drag. The gene can resist both U1 strain and Cg strain of TMV.

Abstract: A semiconductor device includes a voltage input circuit node and a ground voltage node. A first transistor is coupled between the voltage input circuit node and the ground voltage node. A triggering circuit is coupled between the voltage input circuit node and the ground voltage node in parallel with the first transistor. The triggering circuit includes a trigger diode. An output of the triggering circuit is coupled to a control terminal of the first transistor. A load is powered by coupling the load between the voltage input circuit node and the ground voltage node.

Abstract: The invention relates to the isolation and the cloning and breeding application of a tobacco mosaic virus (TMV) resistant N'au gene. The invention discloses the nucleotide sequence of the TMV resistant N'au gene shown as SEQ ID NO.1. The amino acids of polypeptide encoded by the TMV resistant N'au gene are shown as SEQ ID NO.2. A non-transgenic TMV resistant tobacco variety can be obtained by transferring an N'au gene which is contained by germplasm resources into a TMV infected popular tobacco variety by conventional breeding means. The N'au gene of the invention has a homologous sequence with high identity rate of nucleotides in the popular tobacco variety, so that it is easy to obtain a shorter introgression segment single plant carrying the N'au gene by conventional breeding, and thereby to obtain a TMV resistant variety with lower linkage drag. The gene can resist both U1 strain and Cg strain of TMV.

Abstract: A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.