Abstract: A pedestal assembly is provided. The pedestal assembly includes an electrostatic chuck configured to support a workpiece. The pedestal assembly includes a focus ring have a top surface and a bottom surface. The focus ring can be configured to surround a periphery of the workpiece when the workpiece is positioned on the electrostatic chuck. The pedestal assembly includes a plurality of insulators. The pedestal assembly further includes a conductive member positioned between at least a portion of the bottom surface of the focus ring and at least a portion of one of the plurality of insulators.

Abstract: A pressure control system is provided. The pressure control system includes a member at least partially positioned within a pumping port fluidly coupled between a multi-head processing chamber and a pump configured to evacuate gases from the multi-head processing chamber. The member is rotatable relative to the pumping port. The pressure control system includes a plurality of pressure sensors. Each of the pressure sensors is configured to obtain data indicative of a pressure of a flow of gas entering the multi-head processing chamber at a corresponding head of the multi-head processing chamber. The pressure control system includes an actuator configured to rotate the member to control a pressure of a flow of gas at a first processing head of the multi-head processing chamber.

Abstract: Provided is a process platform, relating to the field of semiconductor technologies and specifically. The process platform includes a conveying bin, an accommodating bin, and reaction chambers. The conveying bin is internally provided with a first conveying part having grabbing mechanisms. The accommodating bin is communicated with the conveying bin and used for loading a wafer. The reaction chambers are each communicated with the conveying bin, at least one wafer carrying table is arranged in each reaction chamber, and liftable ejector pins are arranged on a top surface of the wafer carrying table.

Abstract: A lift pin assembly for a lift pin of a plasma processing apparatus is provided. The lift pin assembly includes a pin housing defining an opening into which a lift pin extends. The pin housing is positioned such that the opening is aligned with an opening defined by an electrostatic chuck. The assembly includes a pin height adjustment member partially positioned within the opening defined by the pin housing. The pin height adjustment member is movable along an axis in a first direction and a second direction to move the lift pin into and out of the opening defined by the electrostatic chuck. The assembly includes a pin holder assembly at least partially positioned within an opening defined by the pin height adjustment member. The pin holder assembly is configured to hold the lift pin such that the lift pin is aligned with the opening defined by the electrostatic chuck.

Abstract: A pedestal assembly is provided. The pedestal assembly includes an electrostatic chuck configured to support a workpiece. The pedestal assembly includes a focus ring have a top surface and a bottom surface. The focus ring can be configured to surround a periphery of the workpiece when the workpiece is positioned on the electrostatic chuck. The pedestal assembly includes a plurality of insulators. The pedestal assembly further includes a conductive member positioned between at least a portion of the bottom surface of the focus ring and at least a portion of one of the plurality of insulators.

Abstract: A pressure control system is provided. The pressure control system includes a member at least partially positioned within a pumping port fluidly coupled between a multi-head processing chamber and a pump configured to evacuate gases from the multi-head processing chamber. The member is rotatable relative to the pumping port. The pressure control system includes a plurality of pressure sensors. Each of the pressure sensors is configured to obtain data indicative of a pressure of a flow of gas entering the multi-head processing chamber at a corresponding head of the multi-head processing chamber. The pressure control system includes an actuator configured to rotate the member to control a pressure of a flow of gas at a first processing head of the multi-head processing chamber.

Abstract: A lift pin assembly for a lift pin of a plasma processing apparatus is provided. The lift pin assembly includes a pin housing defining an opening into which a lift pin extends. The pin housing is positioned such that the opening is aligned with an opening defined by an electrostatic chuck. The assembly includes a pin height adjustment member partially positioned within the opening defined by the pin housing. The pin height adjustment member is movable along an axis in a first direction and a second direction to move the lift pin into and out of the opening defined by the electrostatic chuck. The assembly includes a pin holder assembly at least partially positioned within an opening defined by the pin height adjustment member. The pin holder assembly is configured to hold the lift pin such that the lift pin is aligned with the opening defined by the electrostatic chuck.

Abstract: A reaction chamber is provided. The reaction chamber includes a chamber body, a dielectric window, and a power supplier. The dielectric window is provided on top of the chamber body along a first direction and hermetically connected with the chamber body. Each coil of a plurality of sets of coils is wound around an outer surface of the dielectric window at an interval along the first direction. The plurality of sets of coils are connected in parallel, with first ends electrically coupled to the power supplier for supplying power to each set of the plurality of sets of coils, and with second ends grounded. The second ends of the plurality of sets of coils are arranged in proximity between the first ends.

Abstract: Provided are a waste gas processing device, a vacuum coating system, and an operation method of a waste gas processing device. The waste gas processing device is configured to remove and recover arsenic in waste gas, and includes a condensation portion and a scraping portion. The condensation portion is provided with a condensation cavity, and an air inlet, an air outlet and a discharge port communicated with the condensation cavity. The condensation portion is configured to cool waste gas charged into the condensation cavity from the air inlet, so that gaseous arsenic in the waste gas is condensed on an inner wall surface of the condensation cavity by cooling to form solid arsenic. The scraping portion is rotatably provided in the condensation cavity, and a partial surface of the scraping portion abuts against the inner wall surface of the condensation cavity.

Abstract: The present disclosure provides a heating assembly arranged below a carrier plate, including a first heating unit and a second heating unit arranged up and down; wherein the first heating unit includes a plurality of first heating elements arranged in parallel, the second heating unit includes a plurality of second heating elements arranged in parallel; the arrangement direction of the first heating elements is perpendicular to the arrangement direction of the second heating elements, and the projections of the first heating elements and the second heating elements on a heating surface of the carrier plate constitute several annular heating zones. The heating assembly is simple in structure and rational in design. The heating surface of the carrier plate is divided into a plurality of annular zones, which effectively improves the uniformity of heating temperature distribution and process results.

Abstract: The present disclosure relates to a field of semiconductor production device, and more particularly to a cooling member and a vacuum coating device. The cooling member includes a cooling plate and a rotating mechanism. The cooling plate includes at least one cooling strip communicated with a cooling liquid pipeline. The rotating mechanism includes a driving member and a rotating shaft, the driving member is connected with one end of the rotating shaft, and the other end of the rotating shaft is connected with the at least one cooling strip. The rotating mechanism drives the cooling strip in the cooling plate to rotate. In a cooling state, the cooling strip is parallel to a substrate in a chamber, the cooling area is increased, and the cooling efficiency is increased.

Abstract: The present disclosure relates to the technical filed of cooling equipment in the vacuum coating filed, and discloses a cooling plate, including a cooling plate body and a circulating water channel arranged in the cooling plate body; wherein a water-inlet channel and a water-return channel of the circulating water channel are in parallel. By arranging the circulating water channel in which the water-inlet channel and the water-return channel are in parallel in the cooling plate body, the cooling plate provided by the present disclosure improves the heat exchange efficiency and solves the problem of the temperature non-uniformity of the entire cooling plate due to the temperature difference between the inlet water and returned water.

Abstract: Embodiments of the invention relate to a reaction chamber and a plasma processing apparatus, which include a chamber body, a dielectric window and a power supply unit, the dielectric window is provided above and hermetically connected with the chamber body, and provided with plural sets of coils arranged at intervals in a vertical direction and wound around the dielectric window at an outer side thereof, and the power supply unit supplies power to the plural sets of coils. In the reaction chamber and the plasma processing apparatus, plasma can be distributed evenly and have an increased density in the reaction chamber, thereby improving uniformity and efficiency of the process; meanwhile, effective power for exciting plasma can be improved, and temperature rise and temperature gradient of the dielectric window during the process can be lowered, so as to prevent the dielectric window from cracking, and prolong service life of the dielectric window.