Patents by Inventor Changli Chen

Changli Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250136751
    Abstract: The present invention discloses a polyester, a preparation method therefor and use thereof. The polyester includes repeating units derived from the following components: a first component A, based on the total molar weight of the first component A, including: a1) 81-100 mol % of succinic acid, or an ester derivative thereof or an anhydride derivative thereof, and a2) 0-19 mol % of a dicarboxylic acid other than succinic acid, or an ester derivative thereof or an anhydride derivative thereof; a second component B: 1,4-butanediol; and a third component C: a dimer(1,4-butanediol); based on the total molar weight of the first component A, the molar content of the repeating unit —CH2CH2CH2CH2—O— in the third component C is 0.05-3.0 mol %. In the present invention, the molar content of the repeating unit —CH2CH2CH2CH2—O— in dimer(1,4-butanediol) is controlled to 0.05-3.0 mol %, and thus, the resin color of the polyester can be effectively improved.
    Type: Application
    Filed: September 9, 2022
    Publication date: May 1, 2025
    Applicants: ZHUHAI WANGO CHEMICAL CO., LTD., KINGFA SCI. & TECH. CO., LTD.
    Inventors: Chuanhui ZHANG, Pingxu CHEN, Nanbiao YE, Chunping OUYANG, Kaijin MAI, Xueteng DONG, Xiangbin ZENG, Changli LU, Tongmin CAI
  • Publication number: 20250075329
    Abstract: Disclosed in the present disclosure is a metal structural member used in cooperation with a gallium-based liquid metal. A high phosphorus nickel alloy layer is arranged on a surface of the metal structural member in contact with the gallium-based liquid metal. The metal structural member does not react with the gallium-based liquid metal when it is in contact with the gallium-based liquid metal, thereby avoiding a degradation of heat dissipation performance due to consumption of the gallium-based liquid metal. Further disclosed in the present disclosure are a manufacturing method for the metal structural member, and an application of the metal structural member in heat dissipation of computer chips, cell phone chips, communication products, high power LEDs, insulated gate bipolar transistors, and high power electronic products.
    Type: Application
    Filed: August 29, 2022
    Publication date: March 6, 2025
    Applicant: YUNNAN ZHONGXUAN LIQUID METAL TECHNOLOGY CO., LTD
    Inventors: Changli CAI, Chengdu GENG, Daotong CHEN, Yingbao YANG, Jianping AN, Wangli DU, Huifang TANG, Ji ZHANG
  • Publication number: 20250059320
    Abstract: Disclosed are a semi-aromatic polyester, and a preparation method therefor and a use thereof. In the present invention, on the basis of the total molar amount of diacid, the molar content of a repeating unit —CH2CH2CH2CH2—O— in dimer(1,4-butanediol) is controlled to be 0.05-0.35 mol %, which can effectively improve the resin color of the semi-aromatic polyester.
    Type: Application
    Filed: September 23, 2021
    Publication date: February 20, 2025
    Applicants: ZHUHAI WANGO CHEMICAL CO., LTD., KINGFA SCI. & TECH. CO., LTD.
    Inventors: Chuanhui ZHANG, Pingxu CHEN, Nanbiao YE, Chunping OUYANG, Kaijin MAI, Xueteng DONG, Xiangbin ZENG, Changli LU, Tongmin CAI
  • Publication number: 20250043069
    Abstract: The present invention discloses a semi-aromatic polyester, and a preparation method therefor and an application thereof. The semi-aromatic polyester has a specific scope of double bond content. Compared with the existing semi-aromatic polyester, the semi-aromatic polyester of the present invention has better melting heat retention stability and fine color.
    Type: Application
    Filed: September 23, 2022
    Publication date: February 6, 2025
    Applicants: JIANGSU KINGFA SCI & TECH. ADVANCED MATERIALS CO., LTD., ZHUHAI KINGFA BIOMATERIAL CO., LTD., KINGFA SCI. & TECH. CO., LTD.
    Inventors: Chuanhui ZHANG, Pingxu CHEN, Nanbiao YE, Chunping OUYANG, Kaijin MAI, Xueteng DONG, Xiangbin ZENG, Changli LU, Tongmin CAI
  • Publication number: 20160308500
    Abstract: A current mirror circuit for biasing a power amplifier includes a modified Wilson current mirror with a pair of first and second mirror transistors connected to a third transistor. The first mirror transistor is configured for operating in a saturation mode, with a gate voltage of the first mirror transistor being lower than a gate voltage of the power amplifier. The third transistor charges the power amplifier circuit during a positive half cycle of an input signal and the first mirror transistor discharges the power amplifier circuit during a negative half cycle of the input signal at different rates.
    Type: Application
    Filed: April 15, 2016
    Publication date: October 20, 2016
    Inventors: Sifen Luo, Zhan Xu, Changli Chen, Haitao Li, Heng-chia Chang, Narisi Wang, Jung Ho Yoon
  • Publication number: 20160133375
    Abstract: A circuit includes a dielectric layer, a first via residing in the dielectric layer, a second via residing in the dielectric layer, and an inductor. The inductor includes a first inductor element and a second inductor element. The first inductor element is formed by a first transmission line including a plurality of segments defined between a first end and a second end thereof. The second inductor element is formed by a second transmission line including a plurality of segments defined between a first end and a second end thereof. A first port is defined by one segment of the plurality of segments of the second transmission line, wherein current flows in the inductor in the same direction from a second port defined at the first end of the first transmission line to the first port, and from the first port to a third port defined at the second via.
    Type: Application
    Filed: November 5, 2015
    Publication date: May 12, 2016
    Inventors: Haitao Li, Sifen Luo, Changli Chen
  • Publication number: 20160134249
    Abstract: A circuit includes a flip-chip die and a laminate substrate. The flip-chip die includes a first bump and a second bump. A first metal layer is disposed on the laminate substrate. The first metal layer includes a first transmission line having a plurality of segments forming a first spiral inductor. A first end of the first transmission line is electrically coupled to the first bump. A second end of the first transmission line is electrically coupled to a first power supply pin.
    Type: Application
    Filed: November 4, 2015
    Publication date: May 12, 2016
    Inventors: Haitao Li, Changli Chen
  • Publication number: 20160134243
    Abstract: An RF power amplifier circuit has a signal input and a signal output. An input matching network connected to the signal input, and an output matching network is connected to the signal output. There is a power amplifier with an input connected to the input matching network, and an output connected to the output matching network. A bias boosting circuit is connected to the input of the power amplifier, and the bias boosting circuit comprises a cascode current mirror that is defined by a first cascode circuit and a second cascode circuit, and a biasing transistor that is connected to an output of the cascode current mirror. The biasing transistor, together with the power amplifier, defines a current mirror. The bias boosting circuit is thus a dual current mirror circuit that boosts the bias of the power amplifier.
    Type: Application
    Filed: November 4, 2015
    Publication date: May 12, 2016
    Inventors: Sifen Luo, Changli Chen