Patents by Inventor Changliang Qi

Changliang Qi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and method for manufacturing the same
    Patent number: 9276085
    Abstract: The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate on both sides of the source/drain junction extension. Accordingly, the present invention also provides methods for manufacturing the semiconductor structure. The present invention can provide a source/drain junction extension with a high doping concentration and a low junction depth, thereby effectively improving the performance of the semiconductor structure.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: March 1, 2016
    Assignee: Institute of Microelectronics Chinese Academy of Sciences
    Inventors: Huaxiang Yin, Xiaolong Ma, Changliang Qi, Qiuxia Xu, Dapeng Chen
  • SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20150115374
    Abstract: The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate on both sides of the source/drain junction extension. Accordingly, the present invention also provides methods for manufacturing the semiconductor structure. The present invention can provide a source/drain junction extension with a high doping concentration and a low junction depth, thereby effectively improving the performance of the semiconductor structure.
    Type: Application
    Filed: April 26, 2012
    Publication date: April 30, 2015
    Applicant: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Huaxiang Yin, Xiaolong Ma, Changliang Qi, Qiuxia Xu, Dapeng Chen