Abstract: A diffuser includes a front-side gradient surface formed from a diffuser block, a back-side gradient surface formed from the diffuser block, and opening structures formed from the front-side gradient surface to the back-side gradient surface. Each opening structure includes a conical opening having a first end along the front-side gradient surface and a second end corresponding to an apex at a depth within the diffuser block, and a cylindrical opening formed from the depth to the back-side gradient surface. The opening structures are arranged in rows including a first set of rows and a second set of rows alternately positioned along a length of the diffuser block.

Abstract: The present disclosure provides a method for increasing content of nutritional components of winged bean pods and an application thereof, which belongs to the technical field of deep processing of agricultural products. The method provided in the present disclosure comprises the following steps: (1) soaking a winged bean pod in water and mixing with an aqueous sodium chloride solution, and then steaming to obtain a softened pod; and (2) treating the softened pod with an alkaline substance or an acidic substance or cellulase. The present disclosure uses physical, chemical, and biological treatment methods to process the winged bean pods, and aims to find a method to increase the content of nutritional components of the pods and the palatability of animals, in order to better apply the pods to feed.

Abstract: A diffuser includes a front-side gradient surface formed from a diffuser block, a back-side gradient surface formed from the diffuser block, and opening structures formed from the front-side gradient surface to the back-side gradient surface. Each opening structure includes a conical opening having a first end along the front-side gradient surface and a second end corresponding to an apex at a depth within the diffuser block, and a cylindrical opening formed from the depth to the back-side gradient surface. The opening structures are arranged in rows including a first set of rows and a second set of rows alternately positioned along a length of the diffuser block.

Abstract: An interactive control method, an apparatus, and a system for an intelligent kitchen, a computer readable storage medium, and an electronic device, capable of improving the degree of intelligence of kitchen work, and improving the kitchen operation efficiency. The method includes: obtaining dish information of a dish to be cooked, and determining a cooking task according to the dish information; controlling, according to the cooking task, a target cooking station to cook the dish; determining a dish container corresponding to the dish information according to the dish information, and controlling the dish container to be transported to a dish receiving position of the target cooking station; and after the target cooking station finishes cooking and fills a cooked dish into the dish container, sending a delivery instruction to control a delivery terminal to perform a dish delivery task.

Abstract: Various embodiments provide glass bottle-based silicon electrode materials. A battery electrode includes silicon made from magnesiothermic reduction of silicon oxide derived from glass bottles and a conformal carbon coating thereon. A method of making the electrode material includes crushing glass bottles to produce crushed glass containing silicon oxide particles, mixing the silicon oxide particles with a heat scavenger to produce a mixture, magnesiothermically reducing the mixture to produce silicon, and applying a carbon coat to the silicon to produce an electrode material.

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.

Abstract: A metallic nanodendrite electrode and methods are shown. In one example, the metallic nanodendrite is coated with ruthenium oxide and is used as an electrode in a capacitor.

Abstract: Embodiments of the present disclosure relate to methods for in-situ deposition and treatment of a thin film for improved step coverage. In one embodiment, the method for processing a substrate is provided. The method includes forming a dielectric layer on patterned features of the substrate by exposing the substrate to a gas mixture of a first precursor and a second precursor simultaneously with plasma present in a process chamber, wherein the plasma is formed by a first pulsed RF power, exposing the dielectric layer to a first plasma treatment using a gas mixture of nitrogen and helium in the process chamber, and performing a plasma etch process by exposing the dielectric layer to a plasma formed from a gas mixture of a fluorine-containing precursor and a carrier gas, wherein the plasma is formed in the process chamber by a second pulsed RF power.

Abstract: A metallic nanodendrite electrode and methods are shown. In one example, the metallic nanodendrite is coated with ruthenium oxide and is used as an electrode in a capacitor.

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.

Abstract: Embodiments of the present disclosure relate to methods for in-situ deposition and treatment of a thin film for improved step coverage. In one embodiment, the method for processing a substrate is provided. The method includes forming a dielectric layer on patterned features of the substrate by exposing the substrate to a gas mixture of a first precursor and a second precursor simultaneously with plasma present in a process chamber, wherein the plasma is formed by a first pulsed RF power, exposing the dielectric layer to a first plasma treatment using a gas mixture of nitrogen and helium in the process chamber, and performing a plasma etch process by exposing the dielectric layer to a plasma formed from a gas mixture of a fluorine-containing precursor and a carrier gas, wherein the plasma is formed in the process chamber by a second pulsed RF power.

Abstract: Various embodiments provide glass bottle-based silicon electrode materials. A battery electrode includes silicon made from magnesiothermic reduction of silicon oxide derived from glass bottles and a conformal carbon coating thereon. A method of making the electrode material includes crushing glass bottles to produce crushed glass containing silicon oxide particles, mixing the silicon oxide particles with a heat scavenger to produce a mixture, magnesiothermically reducing the mixture to produce silicon, and applying a carbon coat to the silicon to produce an electrode material.

Abstract: Compounds represented by general formula (I), their stereoisomers, tautomers, derivatives, prodrugs or pharmaceutically acceptable salts, and their preparation methods or uses for the manufacture of a medicament of analgesics. In which R1 is selected from H, substituted or unsubstituted phenyl, or substituted or unsubstituted heteroaryl; A is bond, or saturated or unsaturated straight-chain or branched-chain hydrocarbon radical; R2, R3 are each independently hydrogen or methyl, which linked with any position of spirocyclo-structure; n and m are each independently integer between 0-2, do not represent 0 at the same time; B and D are each independently C1-C3 straight-chain or branched-chain alkylene; Y is selected from —CHR4—, O, S, —S(O)—, —SO2—, —NR4— and substituted or unsubstituted phenylene, in which R4 represents H, C1-C6 saturated or unsaturated alkyl, methyl or ethyl substituted by substituted or unsubstituted aryl or heteroaryl; and X? is pharmaceutical acceptable organic or inorganic anion.

Abstract: Compounds represented by general formula (I), their stereoisomers, tautomers, derivatives, prodrugs or pharmaceutically acceptable salts, and their preparation methods or uses for the manufacture of a medicament of analgesics. In which R1 is selected from H, substituted or unsubstituted phenyl, or substituted or unsubstituted heteroaryl; A is bond, or saturated or unsaturated straight-chain or branched-chain hydrocarbon radical; R2, R3 are each independently hydrogen or methyl, which linked with any position of spirocyclo-structure; n and m are each independently integer between 0-2, do not represent 0 at the same time; B and D are each independently C1-C3 straight-chain or branched-chain alkylene; Y is selected from —CHR4—, O, S, —S(O)—, —SO2—, —NR4— and substituted or unsubstituted phenylene, in which R4 represents H, C1-C6 saturated or unsaturated alkyl, methyl or ethyl substituted by substituted or unsubstituted aryl or heteroaryl; and X? is pharmaceutical acceptable organic or inorganic anion.