Patents by Inventor Changll Ryoo

Changll Ryoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Oxide thin film transistor, method for fabricating TFT, display device having TFT, and method for fabricating the same
    Patent number: 9236495
    Abstract: There are provided an oxide TFT, a method for fabricating a TFT, an array substrate for a display device having a TFT, and a method for fabricating the display device. The oxide thin film transistor includes: a gate electrode formed on a substrate; a gate insulating layer formed on the entire surface of the substrate including the gate electrode; an active layer pattern formed on the gate insulating layer above the gate electrode and completely overlapping the gate electrode; an etch stop layer pattern formed on the active layer pattern and the gate insulating layer; and a source electrode and a drain electrode formed on the gate insulating layer including the etch stop layer pattern and the active layer pattern and spaced apart from one another, and overlapping both sides of the etch stop layer pattern and the underlying active layer pattern.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: January 12, 2016
    Assignee: LG Display Co., Ltd.
    Inventors: HyunSik Seo, MoonGoo Kim, BongChul Kim, JeongHoon Lee, Changll Ryoo