Patents by Inventor Changmin Jeon

Changmin Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9443594
    Abstract: A logic embedded nonvolatile memory device is provided which includes a first erase gate line for erasing a plurality of first memory cells; a second erase gate line electrically separated from the first erase gate line and for erasing a plurality of second memory cells; a global erase gate line supplied with an erase voltage; and an erase gate selection switch formed between the first memory cells and the second memory cells, wherein the erase gate selection switch connects the global erase gate line to the first erase gate line or the second erase gate line according to an erase control signal.
    Type: Grant
    Filed: October 7, 2014
    Date of Patent: September 13, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: ChangMin Jeon, Teakwang Yu, Yongtae Kim, Boyoung Seo
  • Publication number: 20150131387
    Abstract: A logic embedded nonvolatile memory device is provided which includes a first erase gate line for erasing a plurality of first memory cells; a second erase gate line electrically separated from the first erase gate line and for erasing a plurality of second memory cells; a global erase gate line supplied with an erase voltage; and an erase gate selection switch formed between the first memory cells and the second memory cells, wherein the erase gate selection switch connects the global erase gate line to the first erase gate line or the second erase gate line according to an erase control signal.
    Type: Application
    Filed: October 7, 2014
    Publication date: May 14, 2015
    Inventors: ChangMin Jeon, Teakwang YU, Yongtae KIM, Boyoung SEO
  • Publication number: 20130288654
    Abstract: Management of communication services is performed by a communication service management system and operation method for the same. The communication service management system includes: a first device supporting communication services; a second device having a communication connection to the first device, and receiving a communication service event from the first device and outputting the received communication service event; and a wireless access point placed between the first device and second device and directly interconnecting the first device and second device.
    Type: Application
    Filed: April 26, 2013
    Publication date: October 31, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Changmin JEON, Doyeon KIM, Seungyoung JEON
  • Patent number: 7214325
    Abstract: Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H2O prior to metal contact formation.
    Type: Grant
    Filed: March 22, 2002
    Date of Patent: May 8, 2007
    Assignee: LG Electronics Inc.
    Inventors: Jong Lam Lee, Ho Won Jang, Jong Kyu Kim, Changmin Jeon
  • Publication number: 20020155691
    Abstract: Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H2O prior to metal contact formation.
    Type: Application
    Filed: March 22, 2002
    Publication date: October 24, 2002
    Inventors: Jong Lam Lee, Ho Won Jang, Jong Kyu Kim, Changmin Jeon