Patents by Inventor Chang Mo KANG
Chang Mo KANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10084020Abstract: Disclosed is a micro display. Each of display portions constituting the micro display includes an individual active layer and p-type semiconductor layer which are on each of a plurality of n-type semiconductors which are each configured in a line form. Consequently, a plurality of light emitting structures are formed on a common n-type semiconductor provided in a form of a single string, and a crossbar structure in which a positive electrode pattern perpendicular to a disposition direction of the common n-type semiconductor is disposed is formed. As a result, a micro display in which a plurality of light emitting structures can be individually controlled can be realized.Type: GrantFiled: November 29, 2017Date of Patent: September 25, 2018Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Chang Mo Kang, Dong Seon Lee, Duk Jo Kong, Soo Young Choi
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Publication number: 20180151632Abstract: Disclosed is a micro display. Each of display portions constituting the micro display includes an individual active layer and p-type semiconductor layer which are on each of a plurality of n-type semiconductors which are each configured in a line form. Consequently, a plurality of light emitting structures are formed on a common n-type semiconductor provided in a form of a single string, and a crossbar structure in which a positive electrode pattern perpendicular to a disposition direction of the common n-type semiconductor is disposed is formed. As a result, a micro display in which a plurality of light emitting structures can be individually controlled can be realized.Type: ApplicationFiled: November 29, 2017Publication date: May 31, 2018Inventors: Chang Mo KANG, Dong Seon LEE, Duk Jo KONG, Soo Young CHOI
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Patent number: 9893233Abstract: A light emitting diode and a manufacturing method therefore are provided. The light emitting diode includes at least: a first light emitting structure, formed on a substrate, in which a first n-GaN layer, a first active layer and a first p-GaN layer are sequentially layered; a first n-type electrode formed on one side of the upper part of the first n-GaN layer; a current diffusion layer, formed on the first light emitting structure, in which at least one hole is arranged; and a second light emitting structure in which a second p-GaN layer, which is formed in a region of a conductive layer in which at least one hole is arranged, and a second active layer and a second n-GaN layer, which are formed on the second p-GaN layer, are sequentially layered.Type: GrantFiled: September 16, 2014Date of Patent: February 13, 2018Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Duk Jo Kong, Dong Seon Lee, Chang Mo Kang, Jun Youb Lee
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Patent number: 9876136Abstract: Disclosed herein is a method of separating a GaN substrate by wet etching. The method employs chemical lift-off, and includes forming oxide layers separated from each other and a GaN column in each space between the oxide layers on a substrate, forming an n-GaN layer covering an upper space on the oxide layers and the n-GaN columns, sequentially forming an active layer, a p-GaN layer, and a p-type electrode on the n-GaN layer, and removing the oxide layers and wet etching the n-GaN columns to separate the substrate. The method can achieve improvement in epitaxial growth of GaN and reduction in fabrication costs through a simple process. In addition, the method can increase a luminous area and light extraction efficiency.Type: GrantFiled: August 13, 2014Date of Patent: January 23, 2018Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Dong-Seon Lee, Duk-Jo Kong, Junyoub Lee, Chang Mo Kang
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Publication number: 20170133553Abstract: A light emitting diode and a manufacturing method therefore are provided. The light emitting diode includes at least: a first light emitting structure, formed on a substrate, in which a first n-GaN layer, a first active layer and a first p-GaN layer are sequentially layered; a first n-type electrode formed on one side of the upper part of the first n-GaN layer; a current diffusion layer, formed on the first light emitting structure, in which at least one hole is arranged; and a second light emitting structure in which a second p-GaN layer, which is formed in a region of a conductive layer in which at least one hole is arranged, and a second active layer and a second n-GaN layer, which are formed on the second p-GaN layer, are sequentially layered.Type: ApplicationFiled: September 16, 2014Publication date: May 11, 2017Inventors: Duk Jo KONG, Dong Seon LEE, Chang Mo KANG, Jun Youb LEE
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Patent number: 9466642Abstract: Disclosed herein is a light emitting diode having a multi-junction structure and a method of fabricating the same. In the light emitting diode, each light emitting structure has a column shape and includes two light emitting layers centered on a p-type semiconductor layer. In addition, a p-type electrode is formed on a side surface of the p-type semiconductor layer, and a p-type electrode is formed through formation and removal of a sacrificial layer. Through this process, the p-type electrode can be formed as a side electrode.Type: GrantFiled: July 25, 2014Date of Patent: October 11, 2016Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Dong-Seon Lee, Dukjo Kong, Chang Mo Kang
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Patent number: 9455144Abstract: Disclosed is a method for growing a nitride-based semiconductor with high quality, the method including: forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; performing dry etching on the first mask layer and the second mask layer to form an opening in which a part of the substrate is exposed; performing selective wet etching on the first mask layer in the opening to form a recess in which a part of the substrate is exposed; depositing a third mask layer in the recess; and growing a nitride-based semiconductor from the exposed part of the substrate on sides of the third mask layer and expanding the growth via the opening.Type: GrantFiled: September 21, 2015Date of Patent: September 27, 2016Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Dong-Seon Lee, Dong-Ju Seo, Jun-Youb Lee, Chang-Mo Kang, Won-Seok Seong, Mun-Do Park
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Publication number: 20160093492Abstract: Disclosed is a method for growing a nitride-based semiconductor with high quality, the method including: forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; performing dry etching on the first mask layer and the second mask layer to form an opening in which a part of the substrate is exposed; performing selective wet etching on the first mask layer in the opening to form a recess in which a part of the substrate is exposed; depositing a third mask layer in the recess; and growing a nitride-based semiconductor from the exposed part of the substrate on sides of the third mask layer and expanding the growth via the opening.Type: ApplicationFiled: September 21, 2015Publication date: March 31, 2016Inventors: Dong-Seon LEE, Dong-Ju SEO, Jun-Youb LEE, Chang-Mo KANG, Won-Seok SEONG, Mun-Do PARK
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Publication number: 20150137072Abstract: A mask for forming a semiconductor layer and a semiconductor device manufactured using the same. The mask for forming a semiconductor layer includes oblique openings. Since a semiconductor layer is formed through one or more openings, it is possible to suppress generation of threading dislocation in a vertical direction from a growth surface of a heterogeneous substrate. The oblique openings are formed by stacking a growth blocking layer on the substrate, followed by dry etching the growth blocking layer, with the substrate disposed in a tilted state.Type: ApplicationFiled: November 14, 2014Publication date: May 21, 2015Inventors: Dong-Seon LEE, Dongju SEO, Junyoub LEE, Dukjo KONG, Chang Mo KANG
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Patent number: 9034327Abstract: Disclosed are novel GPCR (G Protein Coupled Receptor) proteins and genes encoding the same. Also provided is the use of the proteins and the genes. Particularly, contemplated are a novel GPCR (G Protein Coupled Receptor) polypeptide, a polynucleotide coding for the same, a recombinant vector carrying the polynucleotide or a fragment thereof, host cells transformed with the vector, a transgenic animal infected with the vector. Also, a composition for detecting a cancer marker, comprising an agent capable of measuring the expression level of mRNA or protein of the GPCR polynucleotide, a kit for the diagnosis of cancer, comprising the composition, and a method for detecting the GPCR polypeptide and a gene encoding the polypeptide are provided.Type: GrantFiled: September 7, 2009Date of Patent: May 19, 2015Assignee: Korea Research Institute of Bioscience and BiotechnologyInventors: Kyung Sook Chung, Mi Sun Won, Ji Won Ahn, Jeong Hae Choi, Hyang Sook Yoo, Young Il Yeom, Eun Young Song, Hee Gu Lee, Jae Hun Cheong, Chang Mo Kang
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Publication number: 20150050762Abstract: Disclosed herein is a method of separating a GaN substrate by wet etching. The method employs chemical lift-off, and includes forming oxide layers separated from each other and a GaN column in each space between the oxide layers on a substrate, forming an n-GaN layer covering an upper space on the oxide layers and the n-GaN columns, sequentially forming an active layer, a p-GaN layer, and a p-type electrode on the n-GaN layer, and removing the oxide layers and wet etching the n-GaN columns to separate the substrate. The method can achieve improvement in epitaxial growth of GaN and reduction in fabrication costs through a simple process. In addition, the method can increase a luminous area and light extraction efficiency.Type: ApplicationFiled: August 13, 2014Publication date: February 19, 2015Inventors: Dong-Seon LEE, Duk-Jo KONG, Junyoub LEE, Chang Mo KANG
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Publication number: 20150028356Abstract: Disclosed herein is a light emitting diode having a multi-junction structure and a method of fabricating the same. In the light emitting diode, each light emitting structure has a column shape and includes two light emitting layers centered on a p-type semiconductor layer. In addition, a p-type electrode is formed on a side surface of the p-type semiconductor layer, and a p-type electrode is formed through formation and removal of a sacrificial layer. Through this process, the p-type electrode can be formed as a side electrode.Type: ApplicationFiled: July 25, 2014Publication date: January 29, 2015Inventors: Dong-Seon LEE, Dukjo KONG, Chang Mo KANG
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Publication number: 20130146697Abstract: An apparatus for mounting a seat belt retractor for a vehicle is capable of promoting the ease with which a seat belt retractor is mounted on a center pillar by a worker, and minimizing an amount of movement of the seat belt refractor towards the interior of a vehicle body in the event of a broadside collision.Type: ApplicationFiled: September 6, 2012Publication date: June 13, 2013Applicant: Kia Motors Corp.Inventors: Dong Wook Kim, Chang Mo Kang
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Publication number: 20120141488Abstract: Disclosed are novel GPCR (G Protein Coupled Receptor) proteins and genes encoding the same. Also provided is the use of the proteins and the genes. Particularly, contemplated are a novel GPCR (G Protein Coupled Receptor) polypeptide, a polynucleotide coding for the same, a recombinant vector carrying the polynucleotide or a fragment thereof, host cells transformed with the vector, a transgenic animal infected with the vector. Also, a composition for detecting a cancer marker, comprising an agent capable of measuring the expression level of mRNA or protein of the GPCR polynucleotide, a kit for the diagnosis of cancer, comprising the composition, and a method for detecting the GPCR polypeptide and a gene encoding the polypeptide are provided.Type: ApplicationFiled: September 7, 2009Publication date: June 7, 2012Applicant: KOREA RESEARCH INSTITUTE OF BIOSCIENCE AND BIOTECHInventors: Kyung Sook Chung, Mi Sun Won, Ji Won Ahn, Jeong Hae Choi, Hyang Sook Yoo, Young Il Yeom, Eun Young Song, Hae Gu Lee, Jae Hun Cheong, Chang Mo Kang
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Publication number: 20090176888Abstract: Provided is a composition for cancer treatment including phytosphingosine or a derivative thereof, or a pharmaceutically acceptable salt thereof as an active ingredient.Type: ApplicationFiled: March 6, 2009Publication date: July 9, 2009Applicant: KOREA INSTITUTE OF RADIOLOGICAL & MEDICAL SCIENCESInventors: Su Jae LEE, Yun Sil LEE, Soo Kwan KIM, Kyung Joong KIM, Chul Koo CHO, Chang Mo KANG, Tae Hwan KIM, Sangwoo BAE, Moon Taek PARK, Jung A. CHOI, Min Jeong KIM, Hee Yong CHUNG, Sujong KIM, Seongnam KANG, Weon Ik CHOI, Jung A. KANG