Patents by Inventor Changqian XIE

Changqian XIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Storage device and method for manufacturing the same
    Patent number: 11216393
    Abstract: A conversion apparatus, a storage device and a method for manufacturing the same are provided. The storage device may include a DDR storage layer, a DDR interface layer, a conversion logic circuit layer, and a peripheral interface layer. The peripheral interface layer may include a GDDR interface layer or a PCIe interface layer. The conversion logic circuit layer may process, by using DDR storage logic, data obtained through the peripheral interface layer and transfer processed data to the DDR interface layer, or process, by using GDDR storage logic, data obtained through the DDR interface layer and transfer processed data to the peripheral interface Layer. The DDR storage layer may be connected to the DDR interface layer, so that the conversion logic circuit layer can convert the storage logic of the data from DDR to GDDR or from GDDR to DDR.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: January 4, 2022
    Assignee: LONTIUM SEMICONDUCTOR CORPORATION
    Inventors: Xianghao Guo, Chuanxing Liu, Feng Chen, Hongfeng Xia, Jin Su, Haowei Guan, Diansheng Ren, Lianliang Tai, Dafeng Zhou, Guangren Li, Changqian Xie
  • Storage Device And Method For Manufacturing The Same
    Publication number: 20210311886
    Abstract: A conversion apparatus, a storage device and a method for manufacturing the same are provided. The storage device may include a DDR storage layer, a DDR interface layer, a conversion logic circuit layer, and a peripheral interface layer. The peripheral interface layer may include a GDDR interface layer or a PCIe interface layer. The conversion logic circuit layer may process, by using DDR storage logic, data obtained through the peripheral interface layer and transfer processed data to the DDR interface layer, or process, by using GDDR storage logic, data obtained through the DDR interface layer and transfer processed data to the peripheral interface Layer. The DDR storage layer may be connected to the DDR interface layer, so that the conversion logic circuit layer can convert the storage logic of the data from DDR to GDDR or from GDDR to DDR.
    Type: Application
    Filed: May 12, 2020
    Publication date: October 7, 2021
    Applicant: LONTIUM SEMICONDUCTOR CORPORATION
    Inventors: Xianghao GUO, Chuanxing LIU, Feng CHEN, Hongfeng XIA, Jin SU, Haowei GUAN, Diansheng REN, Lianliang TAI, Dafeng ZHOU, Guangren LI, Changqian XIE