Abstract: A bi-stable micro-electrical mechanical system (MEMS) heat harvester is provided. A bi-stable MEMS cantilever located between a hot temperature surface and a cold temperature surface, and is made up of a first MEMS material layer, having a first coefficient of thermal expansion. A second MEMS material layer is in contact with the first MEMS material layer, and has a second coefficient of thermal expansion less than the first coefficient of thermal expansion. A tensioner, made from a material having a tensile stress greater than the stress of the first or second MEMS materials, is connected to the cantilever. The heat harvester also includes a mechanical-to-electrical power converter, which may be a piezoelectric device or an electret device. The bi-stable MEMS cantilever may include a thermal expander having a coefficient of thermal expansion greater than the second coefficient of thermal expansion. The thermal expander is connected to the tensioner.

Abstract: Embodiments are related to systems and methods for fluidic assembly, and more particularly to systems and methods for assuring deposition of elements in relation to a substrate.

Abstract: Embodiments are related to integrated circuit (IC) fabrication and, more particularly, to a fluidic assembly process for the placement of light emitting diodes on a direct-emission display substrate.

Abstract: Embodiments are related to systems and methods for fluidic assembly, and more particularly to systems and methods for assuring deposition of elements in relation to a substrate.

Abstract: Particle detectors and methods for detecting particulate matter accumulated on a surface are provided. According to one aspect, the particle detector may comprise a substrate, an optical light source configured to emit light along a light path, a waveguide associated with the substrate, having a surface exposed to a gaseous environment and configured to accumulate on the surface particulate matter from the gaseous environment, a detector configured to receive the emitted light from the waveguide, and a controller configured to determine the intensity of the detected light and output an indication of an opacity of the surface of the waveguide with the accumulated particulate matter.

Abstract: A method is provided for fabricating piezoelectric plates. A sacrificial layer is formed overlying a growth substrate. A template layer, with openings exposing sacrificial layer surfaces, is formed over the sacrificial layer. An adhesion layer/first electrode stack is selectively deposited in the openings overlying the sacrificial layer surfaces, and a piezoelectric material formed in the openings overlying the stack. Then, a second electrode is formed overlying the piezoelectric material. Using the second electrode as a hardmask, the piezoelectric material is etched to form polygon-shaped structures, such as disks, attached to the sacrificial layer surfaces. After removing the template layer and annealing, the polygon-shaped structures are separated from the sacrificial layer. With the proper choice of growth substrate material, the annealing can be performed at a relatively high temperature.

Abstract: A method is provided for fabricating a thin-film electronic device employing a piezoelectric plate. The method provides a plurality of piezoelectric plates, and a substrate with electronic devices, each electronic device including a top surface well. A piezoelectric plate suspension is formed and flowed over the substrate. In response to the piezoelectric plate suspension flow, piezoelectric plates are captured in the top surface wells. The electric device top surface wells have well bottom surfaces, with bottom electrical contacts formed on the bottom surfaces. Thus, the capture of a piezoelectric plate in a top surface well entails interfacing a piezoelectric plate electrode, either the first electrode or the second electrode, to the bottom electrical contact. Subsequent to capturing the piezoelectric plates in the top surface wells, a thin-film process forms a conductive line overlying the exposed piezoelectric device electrode (i.e., the electrode not connected to the bottom electrical contact).

Abstract: Embodiments are related to systems and methods for fluidic assembly, and more particularly to diodes offering orientation control properties in a fluidic assembly system.

Abstract: Embodiments are related to systems and methods for forming and using a top-contact disk.

Abstract: Embodiments are related to integrated circuit (IC) fabrication and, more particularly, to a fluidic assembly process for the placement of light emitting diodes on a direct-emission display substrate.

Abstract: A bi-stable micro-electrical mechanical system (MEMS) heat harvester is provided. A bi-stable MEMS cantilever located between a hot temperature surface and a cold temperature surface, and is made up of a first MEMS material layer, having a first coefficient of thermal expansion. A second MEMS material layer is in contact with the first MEMS material layer, and has a second coefficient of thermal expansion less than the first coefficient of thermal expansion. A tensioner, made from a material having a tensile stress greater than the stress of the first or second MEMS materials, is connected to the cantilever. The heat harvester also includes a mechanical-to-electrical power converter, which may be a piezoelectric device or an electret device. The bi-stable MEMS cantilever may include a thermal expander having a coefficient of thermal expansion greater than the second coefficient of thermal expansion. The thermal expander is connected to the tensioner.

Abstract: Particle detectors and methods for detecting particulate matter accumulated on a surface are provided. According to one aspect, the particle detector may comprise a substrate, an optical light source configured to emit light along a light path, a waveguide associated with the substrate, having a surface exposed to a gaseous environment and configured to accumulate on the surface particulate matter from the gaseous environment, a detector configured to receive the emitted light from the waveguide, and a controller configured to determine the intensity of the detected light and output an indication of an opacity of the surface of the waveguide with the accumulated particulate matter.

Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

Abstract: A method is provided for forming a planar structure solar cell. Generally, the method forms a transparent conductive electrode, with a planar layer of a first metal oxide adjacent to the transparent conductive electrode. For example, the first metal oxide may be an n-type metal oxide. A semiconductor absorber layer is formed adjacent to the first metal oxide, comprising organic and inorganic materials. A p-type semiconductor hole-transport material (HTM) layer is formed adjacent to the semiconductor absorber layer, and a metal electrode is formed. adjacent to the HTM layer. In one aspect, the HTM layer is an inorganic material such as a p-type metal oxide. Some explicit examples of HTM materials include stoichiometric and non-stoichiometric molybdenum (VI) oxide, stoichiometric and non-stoichiometric vanadium (V) oxide, stoichiometric and non-stoichiometric nickel (II) oxide, and stoichiometric and non-stoichiometric copper (I) oxide. Also provide are planar solar cell devices.

Abstract: A method is provided for forming a mesoporous-structured solar cell with a silane or siloxane barrier. The method forms a transparent conductive electrode overlying a transparent substrate. A non-mesoporous layer of a first metal oxide overlies the transparent conductive electrode, with a mesoporous layer of a second metal oxide overlying the non-mesoporous layer of first metal oxide. An aminoalkoxysilane layer overlies the mesoporous layer of second metal oxide. Over the aminoalkoxysilane layer is deposited a semiconductor absorber layer comprising organic and inorganic components. Using the aminoalkoxysilane linker, the mesoporous layer of second metal oxide is linked to the semiconductor absorber layer. A hole-transport material (HTM) layer is formed overlying the semiconductor absorber layer, and a metal electrode overlies the HTM layer. A mesoporous-structured solar cell with a silane or siloxane barrier is also provided.

Abstract: A method is presented for forming a surface-passivated mesoporous-structured solar cell. The method provides a transparent substrate, and forms an overlying transparent conductive electrode. A non-mesoporous layer of a first metal oxide is formed overlying the transparent conductive electrode. A mesoporous structure is formed overlying the non-mesoporous layer of first metal oxide. The mesoporous structure includes a mesoporous layer of a second metal oxide over the first metal oxide layer, and coating the mesoporous layer of second metal oxide is a passivating semiconductor layer having a bandgap wider than the second metal oxide. A semiconductor absorber layer is formed overlying the mesoporous structure, which is made up of both organic and inorganic components. A hole-transport medium (HTM) layer is formed overlying the semiconductor absorber layer, which may be an organic material. A metal electrode overlies the HTM layer.

Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

Abstract: A method is provided for forming a direct emission display. The method provides a transparent substrate with an array of wells formed in its top surface. A fluid stream is supplied to the substrate top surface comprising a plurality of top-contact light emitting diode (LED) disks. The wells are filled with the LED disks. A first array of electrically conductive lines is formed over the substrate top surface to connect with a first contact of each LED disk, and a second array of electrically conductive lines is formed over the substrate top surface to connect with a second contact of each LED disk. An insulator over the disk exposes an upper disk (e.g., p-doped) contact region. A via is formed through the disk, exposing a center contact region of a lower (e.g., n-doped) disk contact region. Also provided are a top-contact LED disk and direct emission display.

Abstract: A fluidic assembly method is provided that uses a counterbore pocket structure. The method is based upon the use of a substrate with a plurality of counterbore pocket structures formed in the top surface, with each counterbore pocket structure having a through-hole to the substrate bottom surface. The method flows an ink with a plurality of objects over the substrate top surface. As noted above, the objects may be micro-objects in the shape of a disk. For example, the substrate may be a transparent substrate and the disks may be light emitting diode (LED) disks. Simultaneously, a suction pressure is created at the substrate bottom surface. In response to the suction pressure from the through-holes, the objects are drawn into the counterbore pocket structures. Also provided is a related fluidic substrate assembly.

Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.