Abstract: A semiconductor device comprising a first field insulating film around at least a part of a first fin type pattern and at least a part of a second fin type pattern, a second field insulating film between the first fin type pattern and the second fin type pattern and protruding from the first field insulating film and a first gate structure which extends over the first and second field insulating films in a second direction intersecting with a first direction, and includes a first portion on the first field insulating film, and a second portion on the second field insulating film, wherein a first width of the first portion of the first gate structure is greater than a second width of the second portion of the first gate structure.

Abstract: A semiconductor device includes a substrate including a lower substrate layer, a buried insulation layer on the lower substrate layer, and an upper substrate layer on the buried insulation layer, a first trench passing through the upper substrate layer, the buried insulation layer, and a portion of the lower substrate layer, a second trench passing through the upper substrate layer, the buried insulation layer, and a portion of the lower substrate layer and being spaced apart from the first trench, a field insulation layer in a portion of the first trench and in a portion of the second trench, and a first fin pattern defined by the first trench and the second trench. An upper surface of the field insulation layer is higher than an upper surface of the buried insulation layer.

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

Abstract: A semiconductor device comprising a first field insulating film around at least a part of a first fin type pattern and at least a part of a second fin type pattern, a second field insulating film between the first fin type pattern and the second fin type pattern and protruding from the first field insulating film and a first gate structure which extends over the first and second field insulating films in a second direction intersecting with a first direction, and includes a first portion on the first field insulating film, and a second portion on the second field insulating film, wherein a first width of the first portion of the first gate structure is greater than a second width of the second portion of the first gate structure.

Abstract: A semiconductor device includes a substrate including a lower substrate layer, a buried insulation layer on the lower substrate layer, and an upper substrate layer on the buried insulation layer, a first trench passing through the upper substrate layer, the buried insulation layer, and a portion of the lower substrate layer, a second trench passing through the upper substrate layer, the buried insulation layer, and a portion of the lower substrate layer and being spaced apart from the first trench, a field insulation layer in a portion of the first trench and in a portion of the second trench, and a first fin pattern defined by the first trench and the second trench. An upper surface of the field insulation layer is higher than an upper surface of the buried insulation layer.

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

Abstract: Provided are a multi-gate transistor device and a method for fabricating the same. The method for fabricating the multi-gate transistor device includes forming first and second fins shaped to protrude on a substrate and aligned and extending in a first direction and a trench separating the first and second fins from each other in the first direction between the first and second fins, performing ion implantation of impurities on sidewalls of the trench, forming a field dielectric film filling the trench, forming a recess in the first fin not exposing the field dielectric film, and growing an epitaxial layer in the recess.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device comprising a substrate, a first fin formed on the substrate, and an isolation film formed on the substrate and coming in contact with a part of the first fin, wherein the first fin includes a first region that is in contact with the isolation film, a second region that is in non-contact with the isolation film, and a boundary line between the first region and the second region, the first region has a slope that is at right angles with respect to the boundary line, and the second region has a slope that is an acute angle with respect to the boundary line.