Abstract: The invention provides a method for growing bimodal-sized InAs/GaAs quantum dots, quantum dots, and a quantum dot composition. The method includes: S1. at a first temperature, depositing n atomic layers of InAs on a GaAs base grown with a GaAs buffer layer, where 1.4<n<1.7; S2. at a second temperature, performing annealing to form quantum dot nuclei, where the second temperature is lower than the first temperature; and S3. continuing to deposit 1.7-n atomic layers of InAs at the second temperature, where the quantum dot nuclei form first quantum dots, when a deposition amount reaches 1.7 atomic layers, second quantum dots are formed on the flat surface between the first quantum dots, and a size of the second quantum dot is smaller than a size of the first quantum dot.

Abstract: A manufacturing apparatus and a manufacturing method for a quantum dot material. The manufacturing apparatus adds an optical device capable of generating an interference pattern in an existing epitaxial apparatus, so that a substrate applies an interference pattern on an epitaxial layer while performing epitaxial growth. By means of the interference pattern, a regularly distributed temperature field is formed on the epitaxial layer, so that on the epitaxial layer, an atom aggregation phenomenon is formed at dot positions with higher temperature, but no atoms are aggregated on areas having relatively lower temperature. Therefore, according to the temperature distribution on the surface of the epitaxial layer, positions where quantum dots generate can be controlled manually without introducing defects, thereby achieving a defect-free and long-range ordered quantum dot manufacturing.

Abstract: A manufacturing apparatus and a manufacturing method for a quantum dot material. The manufacturing apparatus adds an optical device capable of generating an interference pattern in an existing epitaxial apparatus, so that a substrate applies an interference pattern on an epitaxial layer while performing epitaxial growth. By means of the interference pattern, a regularly distributed temperature field is formed on the epitaxial layer, so that on the epitaxial layer, an atom aggregation phenomenon is formed at dot positions with higher temperature, but no atoms are aggregated on areas having relatively lower temperature. Therefore, according to the temperature distribution on the surface of the epitaxial layer, positions where quantum dots generate can be controlled manually without introducing defects, thereby achieving a defect-free and long-range ordered quantum dot manufacturing.