Patents by Inventor Chang-Wei Liu

Chang-Wei Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low dropout regulator circuits, input/output device, and methods for operating a low dropout regulator
    Patent number: 11966241
    Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.
    Type: Grant
    Filed: February 11, 2022
    Date of Patent: April 23, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Huan-Neng Chen, Yen-Lin Liu, Chia-Wei Hsu, Jo-Yu Wu, Chang-Fen Hu, Shao-Yu Li, Bo-Ting Chen
  • Method for manufacturing thin film transistor
    Patent number: 8093110
    Abstract: A method for manufacturing a thin film transistor (TFT) is disclosed. The method is achieved by forming and defining a source and a drain of a thin film transistor through two lithographic processes cycles so that the channel length (L) of the thin film transistor can be reduced to 1.5 to 4.0 ?m. Besides, the Ion current of the thin film transistor is increased as the channel length (L) is decreased. Therefore, the component area of the thin film transistor is decreased as the channel width (W) is decreased. Thus, the aperture ratio of the TFT-LCD can be increased due to the decreased component area of the thin film transistor.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: January 10, 2012
    Assignee: AU Optronics Corp.
    Inventor: Chang-Wei Liu
  • METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
    Publication number: 20100297817
    Abstract: A method for manufacturing a thin film transistor (TFT) is disclosed. The method is achieved by forming and defining a source and a drain of a thin film transistor through two lithographic processes cycles so that the channel length (L) of the thin film transistor can be reduced to 1.5 to 4.0 ?m. Besides, the Ion current of the thin film transistor is increased as the channel length (L) is decreased. Therefore, the component area of the thin film transistor is decreased as the channel width (W) is decreased. Thus, the aperture ratio of the TFT-LCD can be increased due to the decreased component area of the thin film transistor.
    Type: Application
    Filed: August 3, 2010
    Publication date: November 25, 2010
    Applicant: Au Optronics Corp.
    Inventor: Chang-Wei Liu
  • Method for manufacturing thin film transistor
    Patent number: 7795081
    Abstract: A method for manufacturing a thin film transistor (TFT) is disclosed. The method is achieved by forming and defining a source and a drain of a thin film transistor through two lithographic processes cycles so that the channel length (L) of the thin film transistor can be reduced to 1.5 to 4.0 ?m. Besides, the Ion current of the thin film transistor is increased as the channel length (L) is decreased. Therefore, the component area of the thin film transistor is decreased as the channel width (W) is decreased. Thus, the aperture ratio of the TFT-LCD can be increased due to the decreased component area of the thin film transistor.
    Type: Grant
    Filed: November 21, 2007
    Date of Patent: September 14, 2010
    Assignee: AU Optronics Corp.
    Inventor: Chang-Wei Liu
  • Method for manufacturing thin film transistor
    Publication number: 20080157086
    Abstract: A method for manufacturing a thin film transistor (TFT) is disclosed. The method is achieved by forming and defining a source and a drain of a thin film transistor through two lithographic processes cycles so that the channel length (L) of the thin film transistor can be reduced to 1.5 to 4.0 ?m. Besides, the Ion current of the thin film transistor is increased as the channel length (L) is decreased. Therefore, the component area of the thin film transistor is decreased as the channel width (W) is decreased. Thus, the aperture ratio of the TFT-LCD can be increased due to the decreased component area of the thin film transistor.
    Type: Application
    Filed: November 21, 2007
    Publication date: July 3, 2008
    Applicant: AU Optronics Corp.
    Inventor: Chang-Wei Liu