Patents by Inventor Changwei PEI

Changwei PEI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for removal of hard mask
    Patent number: 10115625
    Abstract: Embodiments of a method of processing semiconductor devices are presented. The method includes providing a substrate prepared with isolation regions having a non-planar surface topology. The substrate includes at least first and second regions. The first region includes a memory region and the second region includes a logic region. A hard mask layer is formed covering the substrate and the isolation regions with non-planar surface topology. The method includes selectively processing an exposed portion of the hard mask layer over a select region while protecting a portion of the hard mask layer over a non-select region. The top substrate area and isolation regions of the non-select region are not exposed during processing of the portion of the hard mask layer over the select region. Hard mask residue is completely removed over the select region during processing of the exposed portion of the hard mask layer.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: October 30, 2018
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Liang Li, Yun Ling Tan, Hai Cong, Changwei Pei, Alex See
  • METHODS FOR REMOVAL OF HARD MASK
    Publication number: 20180190537
    Abstract: Embodiments of a method of processing semiconductor devices are presented. The method includes providing a substrate prepared with isolation regions having a non-planar surface topology. The substrate includes at least first and second regions. The first region includes a memory region and the second region includes a logic region. A hard mask layer is formed covering the substrate and the isolation regions with non-planar surface topology. The method includes selectively processing an exposed portion of the hard mask layer over a select region while protecting a portion of the hard mask layer over a non-select region. The top substrate area and isolation regions of the non-select region are not exposed during processing of the portion of the hard mask layer over the select region. Hard mask residue is completely removed over the select region during processing of the exposed portion of the hard mask layer.
    Type: Application
    Filed: December 30, 2016
    Publication date: July 5, 2018
    Inventors: Liang LI, Yun Ling TAN, Hai CONG, Changwei PEI, Alex SEE