Patents by Inventor Chang-Won Park
Chang-Won Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8444883Abstract: A method for preparing a cathode active material for a lithium secondary battery is provided. The preparing method includes: adding a phosphorus compound to a transition metal oxide dispersion liquid to prepare a coating liquid; drying the coating liquid to prepare a powder including phosphorus oxide coated on the surface of the transition metal oxide; and dry-mixing the powder coated with the phosphorus oxide with a lithium intercalation compound, and then firing the mixture to form a solid solution compound of L1-M1-M2-P—O (where M1 is a transition metal derived from transition metal oxide, and M2 is a metal derived from lithium intercalation compound) on the surface of the lithium intercalation compound. The method for preparing a cathode active material for a lithium secondary battery simplifies the conventional preparing process to save process cost, and it provides comparable electrochemical characteristics to a cathode active material obtained from a wet process.Type: GrantFiled: March 24, 2009Date of Patent: May 21, 2013Assignee: L & F Co., Ltd.Inventors: Jaephil Cho, Junho Eom, Yoon Han Chang, Chang-Won Park, Seung-Won Lee, Sang-Hoon Jeon, Byung Do Park
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Publication number: 20110244329Abstract: Provided are a cathode active material for a lithium secondary battery and a lithium secondary battery including the same. The cathode active material includes a lithium composite oxide represented by the following Chemical Formula 1. Li[LizA]O2 A={M11-x-y(M10.78Mn0.22)x}M2y??[Chemical Formula 1] In Chemical Formula, M1 and M2 are independently one or more selected from a transition element, a rare earth element, or a combination thereof, M1 and M2 are elements that are different from each other, ?0.05?z?0.1, 0.8?x+y?1.8, and 0.05?y?0.35, and Ni has an oxidation number of 2.01 to 2.4.Type: ApplicationFiled: March 20, 2009Publication date: October 6, 2011Applicant: L F Material Co., Ltd.Inventors: Yoon Han Chang, Sang-Hoon Jeon, Chang-Won Park
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Patent number: 8008784Abstract: A package and a fabricating method thereof are provided. The package includes a lead frame, a chip and a sealant. The lead frame has a notch and a plurality of first notch-side leads, a plurality of first notch-side pads, a plurality of second notch-side leads and a plurality of second notch-side pads. The first notch-side leads extend to a first side of the notch. The first notch-side pads are correspondingly disposed on the first notch-side leads. The second notch-side leads extend to a second side of the notch. The second notch-side pads are correspondingly disposed on the second notch-side leads. The sealant seals up the chip and the lead frame and exposes a lower surface of the lead frame. The notch exposes a portion of the sealant.Type: GrantFiled: October 2, 2008Date of Patent: August 30, 2011Assignee: Advanced Semiconductor Engineering, Inc.Inventors: Young-Moon Hong, Chang-Suk Han, Chang-Won Park
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Publication number: 20110042610Abstract: Disclosed is a method for preparing a cathode active material for a lithium secondary battery, and the preparing method includes: adding a phosphorus compound to a transition metal oxide dispersion liquid to prepare a coating liquid; drying the coating liquid to prepare a powder including phosphorus oxide coated on the surface of the transition metal oxide; and dry-mixing the powder coated with the phosphorus oxide with a lithium intercalation compound, and then firing the mixture to form a solid solution compound of Li-M1-M2-P—O (where M1 is a transition metal derived from transition metal oxide, and M2 is a metal derived from lithium intercalation compound) on the surface of the lithium intercalation compound. The method for preparing a cathode active material for a lithium secondary battery simplifies the conventional preparing process to save process cost, and it provides comparable electrochemical characteristics to a cathode active material obtained from a wet process.Type: ApplicationFiled: March 24, 2009Publication date: February 24, 2011Applicant: L & F CO. LTD.Inventors: Jaephil Cho, Junho Eom, Yoon Han Chang, Chang-Won Park, Seung-Won Lee, Sang-Hoon Jeon, Byung Do Park
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Patent number: 7895499Abstract: A method and an apparatus for checking a pipelined parallel cyclic redundancy is disclosed. In accordance with the method and the apparatus of the present invention, after an entire CRC (cyclic redundancy check) logic is divided into a feedback portion and an input data portion, the input data portion is divided using a pipelined structure such that the input data portion is designed to have the pipelined structure based on an algorithm that maintains a logic level of each stage to be lower than that of the feedback portion and an algorithm that optimizes a size of a register inserted during the division to improve a speed thereof and to detect an error of a received data in a high speed data communication apparatus.Type: GrantFiled: December 27, 2006Date of Patent: February 22, 2011Assignee: Korea Electronics Technology InstituteInventors: Ki-Man Jeon, Chang-Won Park, Young-Hwan Kim, Ki-Tae Kim, Hyun-bean Yi, Sung-Ju Park
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Publication number: 20100084749Abstract: A package and a fabricating method thereof are provided. The package includes a lead frame, a chip and a sealant. The lead frame has a notch and a plurality of first notch-side leads, a plurality of first notch-side pads, a plurality of second notch-side leads and a plurality of second notch-side pads. The first notch-side leads extend to a first side of the notch. The first notch-side pads are correspondingly disposed on the first notch-side leads. The second notch-side leads extend to a second side of the notch. The second notch-side pads are correspondingly disposed on the second notch-side leads. The sealant seals up the chip and the lead frame and exposes a lower surface of the lead frame. The notch exposes a portion of the sealant.Type: ApplicationFiled: October 2, 2008Publication date: April 8, 2010Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Young-Moon Hong, Chang-Suk Han, Chang-Won Park
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Publication number: 20080162767Abstract: Provided is a 4× framer/deframer module for PCI-Express and a framer/deframer device using the same. In the PCI-Express for high-rate data processing, delimiter and pad processing, and 4× framer shifting and arrangement/reverse arrangement for framing/deframing a frame format are performed to achieve a structure that facilitates reconfiguration and expansion, for example, a pipeline structure, so that the 4× framer/deframer module can operate without delay within a 250 MHz clock even when expansion to 32× is made.Type: ApplicationFiled: October 29, 2007Publication date: July 3, 2008Applicant: Korea Electronics Technology InstituteInventors: Sang-Wook CHO, Jin-Kyu Kim, Sung-Ju Park, Hyun-Bean Yi, Chang-Won Park, Ki-Man Jeon
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Publication number: 20070234177Abstract: A method and an apparatus for checking a pipelined parallel cyclic redundancy is disclosed. In accordance with the method and the apparatus of the present invention, after an entire CRC (cyclic redundancy check) logic is divided into a feedback portion and an input data portion, the input data portion is divided using a pipelined structure such that the input data portion is designed to have the pipelined structure based on an algorithm that maintains a logic level of each stage to be lower than that of the feedback portion and an algorithm that optimizes a size of a register inserted during the division to improve a speed thereof and to detect an error of a received data in a high speed data communication apparatus.Type: ApplicationFiled: December 27, 2006Publication date: October 4, 2007Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTEInventors: Ki-Man Jeon, Chang-Won Park, Young-Hwan Kim, Ki-Tae Kim, Hyun-bean Yi, Sung-Ju Park
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Patent number: 6815887Abstract: An organic electroluminescent display (EL) device including a transparent substrate, a first electrode unit formed on the transparent substrate in a predetermined pattern and made of a transparent conductive material, an organic EL unit including organic layers having a predetermined pattern, stacked on the first electrode unit, a second electrode unit corresponding to the first electrode unit, formed on the organic EL unit in a predetermined pattern, and an encapsulation layer to encapsulate the first electrode unit, the organic EL unit and the second electrode unit to protect the same, the encapsulation layer including a first component and a second component made of one or more metals selected from the group consisting of iron (Fe), cobalt (Co), vanadium (V), titanium (Ti), aluminium (Al), silver (Ag) and platinum (Pt).Type: GrantFiled: March 18, 2002Date of Patent: November 9, 2004Assignee: Samsung SDI Co., Ltd.Inventors: Joon-bae Lee, Chang-won Park, Jin-woo Park, Dong-chan Shin
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Plate for a plasma display panel (PDP), method for fabricating the plate, and a PDP having the plate
Patent number: 6674237Abstract: A plate for a plasma display panel includes a plate member formed of a transparent material, a series of electrodes formed in a predetermined pattern on the plate member, and a dielectric layer formed on the plate member to cover the electrodes, wherein the electrodes are formed of a dielectric first component, and a metallic second component of at least one metal selected from a group consisting of iron (Fe), cobalt (Co), vanadium (V), titanium (Ti), aluminum (Al), silver (Ag), silicon (Si), germanium (Ge), yttrium (Y), zinc (Zn), zirconium (Zr), tungsten (W), tantalum (Ta), copper (Cu), and platinum (Pt).Type: GrantFiled: September 10, 2001Date of Patent: January 6, 2004Assignee: Samsung SDI Co., Ltd.Inventors: Young-rag Do, Chang-won Park, Joon-bae Lee, Chaun-gi Choi -
Patent number: 6627322Abstract: A functional film includes a transition layer having a first constituent and a second constituent having gradual content gradients according to a thickness of the functional film. The first constituent is at least one dielectric material selected from the group consisting of SiOx (x>1), MgF2, CaF2, Al2O3, SnO2, In2O3 and ITO, and the second constituent is at least one material selected from the group consisting of iron (Fe), cobalt (Co), titanium (Ti), vanadium (V), aluminum (Al), silver (Ag), silicon (Si), germanium (Ge), yttrium (Y), zinc (Zn), zirconium (Zr), tungsten (W) and tantalum (Ta).Type: GrantFiled: November 28, 2001Date of Patent: September 30, 2003Assignee: Samsung SDI Co., Ltd.Inventors: Chaun-gi Choi, Young-rag Do, Joon-bae Lee, Chang-won Park
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Patent number: 6623862Abstract: A functional film including a transition layer including a first constituent selected from aluminum and silicon and at least one second constituent selected from oxygen and nitrogen, the first and second constituents having gradual content gradients according to a thickness of the functional film.Type: GrantFiled: November 28, 2001Date of Patent: September 23, 2003Assignee: Samsung SDI Co., Ltd.Inventors: Chaun-gi Choi, Young-rag Do, Joon-bae Lee, Chang-won Park
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Patent number: 6618361Abstract: A bus reset method in a network connected by the IEEE 1394 bus is provided. The bus reset method in a network in which a plurality of apparatuses are connected by the IEEE 1394 bus includes the steps of (a) sensing the state change of a port, (b) confirming whether loops exist in the bus when it is sensed in step (a) that a new apparatus is connected to an apparatus of the network, (c) transmitting the bus configuration information of a slave node from the slave node to a master node when it is confirmed that loops do not exist in the step (b), (d) re-configuring the bus of the network from the transmitted bus configuration information and the existing bus configuration information of the master node, and (e) broadcasting the re-configured bus configuration information to all apparatuses connected to the network.Type: GrantFiled: July 2, 1999Date of Patent: September 9, 2003Assignee: Samsung Electronics Co., Ltd.Inventor: Chang-won Park
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Publication number: 20030117071Abstract: An organic electroluminescent display (EL) device including a transparent substrate, a first electrode unit formed on the transparent substrate in a predetermined pattern and made of a transparent conductive material, an organic EL unit including organic layers having a predetermined pattern, stacked on the first electrode unit, a second electrode unit corresponding to the first electrode unit, formed on the organic EL unit in a predetermined pattern, and an encapsulation layer to encapsulate the first electrode unit, the organic EL unit and the second electrode unit to protect the same, the encapsulation layer including a first component and a second component made of one or more metals selected from the group consisting of iron (Fe), cobalt (Co), vanadium (V), titanium (Ti), aluminium (Al), silver (Ag) and platinum (Pt).Type: ApplicationFiled: March 18, 2002Publication date: June 26, 2003Applicant: Samsung SDI Co., Ltd.Inventors: Joon Bae Lee, Chang-Won Park, Jin-Woo Park, Dong-Chan Shin
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Patent number: 6579624Abstract: A functional film includes a transition layer having a first constituent having SiO as a dielectric material and at least one second constituent selected from aluminum (Al), silver (Ag), silicon (Si), germanium (Ge), yttrium (Y), zinc (Zn), zirconium (Zr), tungsten (W) and tantalum (Ta). The first and second constituents have corresponding gradual content gradients according to a thickness of the functional film.Type: GrantFiled: November 28, 2001Date of Patent: June 17, 2003Assignee: Samsung SDI Co., Ltd.Inventors: Chaun-gi Choi, Young-rag Do, Joon-bae Lee, Chang-won Park
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Patent number: 6556543Abstract: A method of determining the maximum hop count in a bus having a tree structure is provided. The method of determining the maximum hop count in a bus having a tree structure includes the steps of (a) configuring a first tree by setting an arbitrary node as a root node, (b) searching for the child node having the maximum length among the child nodes of the root node by scanning all the child nodes in the first tree, (c) configuring a second tree by setting the child node searched for in the step (b) as a new root node, (d) obtaining the maximum length by scanning all the child nodes in the second tree configured in the step (c), and (e) setting the maximum length obtained in the step (d) as the maximum hop count. Accordingly, it is possible to quickly obtain the maximum hop count.Type: GrantFiled: July 6, 1999Date of Patent: April 29, 2003Assignee: Samsung Electronics Co., Ltd.Inventors: Chang-won Park, Chang-kyu Beck
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Plate for a plasma display panel (PDP), method for fabricating the plate, and a PDP having the plate
Publication number: 20020190652Abstract: A plate for a plasma display panel includes a plate member formed of a transparent material, a series of electrodes formed in a predetermined pattern on the plate member, and a dielectric layer formed on the plate member to cover the electrodes, wherein the electrodes are formed of a dielectric first component, and a metallic second component of at least one metal selected from a group consisting of iron (Fe), cobalt (Co), vanadium (V), titanium (Ti), aluminum (Al), silver (Ag), silicon (Si), germanium (Ge), yttrium (Y), zinc (Zn), zirconium (Zr), tungsten (W), tantalum (Ta), copper (Cu), and platinum (Pt).Type: ApplicationFiled: September 10, 2001Publication date: December 19, 2002Applicant: Samsung SDI Co., Ltd.Inventors: Young-Rag Do, Chang-Won Park, Joon-Bae Lee, Chaun-Gi Choi -
Publication number: 20020187354Abstract: A functional film including a transition layer including a first constituent selected from aluminum and silicon and at least one second constituent selected from oxygen and nitrogen, the first and second constituents having gradual content gradients according to a thickness of the functional film.Type: ApplicationFiled: November 28, 2001Publication date: December 12, 2002Applicant: SAMSUNG SDI CO., LTD.Inventors: Chaun-Gi Choi, Young-Rag Do, Joon-Bae Lee, Chang-Won Park
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Publication number: 20020160218Abstract: A functional film includes a transition layer having a first constituent having SiO as a dielectric material and at least one second constituent selected from aluminum (Al), silver (Ag), silicon (Si), germanium (Ge), yttrium (Y), zinc (Zn), zirconium (Zr), tungsten (W) and tantalum (Ta). The first and second constituents have corresponding gradual content gradients according to a thickness of the functional film.Type: ApplicationFiled: November 28, 2001Publication date: October 31, 2002Applicant: SAMSUNG SDI CO., LTD.Inventors: Chaun-gi Choi, Young-rag Do, Joon-bae Lee, Chang-won Park
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Publication number: 20020146570Abstract: A functional film includes a transition layer having a first constituent and a second constituent having gradual content gradients according to a thickness of the functional film. The first constituent is at least one dielectric material selected from the group consisting of SiOx (x>1), MgF2, CaF2, Al2O3, SnO2, In2O3 and ITO, and the second constituent is at least one material selected from the group consisting of iron (Fe), cobalt (Co), titanium (Ti), vanadium (V), aluminium (Al), silver (Ag), silicon (Si), germanium (Ge), yttrium (Y), zinc (Zn), zirconium (Zr), tungsten (W) and tantalum (Ta).Type: ApplicationFiled: November 28, 2001Publication date: October 10, 2002Applicant: SAMSUNG SDI CO., LTD.Inventors: Chaun-gi Choi, Young-rag Do, Joon-bae Lee, Chang-won Park