Abstract: A display device includes a substrate including a display area and a non-display area adjacent to the display area, lower pads disposed in the non-display area of the substrate and spaced apart from each other, upper pads disposed on the lower pads and spaced apart from each other, an anisotropic conductive film disposed between the lower pads and the upper pads, and a circuit film disposed on the upper pads, the circuit film including first lower holes disposed between the upper pads in a plan view, and first upper holes connected to the first lower holes and having radiuses larger than radiuses of the first lower holes. The first upper holes form first openings on an upper surface of the circuit film. A method of manufacturing the display device is provided.

Abstract: A display device includes a substrate including a display area and a non-display area adjacent to the display area, lower pads disposed in the non-display area of the substrate and spaced apart from each other, upper pads disposed on the lower pads and spaced apart from each other, an anisotropic conductive film disposed between the lower pads and the upper pads, and a circuit film disposed on the upper pads, the circuit film including first lower holes disposed between the upper pads in a plan view, and first upper holes connected to the first lower holes and having radiuses larger than radiuses of the first lower holes. The first upper holes form first openings on an upper surface of the circuit film. A method of manufacturing the display device is provided.

Abstract: Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method.