Patents by Inventor Chang Wu Hu

Chang Wu Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
    Patent number: 7589003
    Abstract: A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C. Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates.
    Type: Grant
    Filed: June 14, 2004
    Date of Patent: September 15, 2009
    Inventors: John Kouvetakis, Matthew Bauer, Jose Menendez, Chang Wu Hu, Ignatius S. T. Tsong, John Tolle