Abstract: A railess variable seatback type rear seat includes: a linear movement device configured to convert a rotation of a motor into a linear movement; a sliding movement device configured to convert the linear movement into a sliding movement in which a seat cushion is pushed forward or backward; and a reclining angle change device configured to convert the sliding movement into a reclining movement, and to fold a seatback, which is connected to the seat cushion, forward or to recline the seatback backward.

Abstract: A ceramic electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of grains and grain boundaries disposed between adjacent grains. The grain boundary includes a secondary phase including Sn, a rare-earth element, and a first subcomponent. The rare-earth element includes at least one of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd and Yb. The first subcomponent includes at least one of Si, Mg, and Al.

Abstract: An apparatus and method for manufacturing a grilled seaweed includes the apparatus comprising a grilling unit having a first housing with a first inlet opening and a first outlet opening which communicate with each other; a first conveyor for transferring a sheet of seaweed from the first inlet opening to the first outlet opening; a first heating source installed over the first conveyor to discharge a flame onto a top surface of the seaweed being transferred by the first conveyor; and a second heating source installed on both sides of a lower portion of the first conveyor to apply a flame onto a bottom surface of the seaweed being transferred by the first conveyor.

Abstract: Disclosed herein is a method of printing a nanostructure including: preparing a template substrate on which a pattern is formed; forming a replica pattern having an inverse phase of the pattern by coating a polymer thin film on an upper portion of the template substrate, adhering a thermal release tape to an upper portion of the polymer thin film, and separating the polymer thin film from the template substrate; forming a nanostructure by depositing a functional material on the replica pattern; and printing the nanostructure deposited on the replica pattern to a substrate by positioning the nanostructure on the substrate, applying heat and pressure to the nanostructure, and weakening an adhesive force between the thermal release tape and the replica pattern by the heat.

Abstract: Disclosed herein is a method of depositing a transition metal single-atom catalyst including preparing a carbon carrier, and depositing a transition metal single-atom catalyst on the carbon carrier, in which the carbon carrier is surface-treated by an oxidation process, and wherein the deposition is carried out by an arc plasma process.

Abstract: The present invention relates to a time-division duplex (TDD) antenna apparatus which can reduce signal loss, and thereby minimize the noise figure (NF) of a system and extend uplink coverage of the system, by separating a transmitter circuit from a receiver circuit of the antenna apparatus, and disposing a low noise amplifier (LNA) of the receiver circuit between a reception antenna and a reception filter of the receiver. A time-division duplex antenna apparatus according to an embodiment of the present invention includes: a transmitter which includes at least one transmission antenna module and transmits a downlink signal through a first path; a receiver which includes at least one reception antenna module and receives an uplink signal through a second path that is separated from the first path without any overlapping portions thereof; and a controller which controls the transmitter and the receiver in a time-division duplex manner.

Abstract: A multilayer electronic component includes a body comprising a capacitance-forming portion including a dielectric layer and a plurality of internal electrodes layered with the dielectric layer interposed therebetween, and upper and lower cover portions disposed on upper and lower surfaces of the capacitance-forming portion, respectively; and external electrodes disposed on the body and electrically connected to at least some of the plurality of internal electrodes, respectively, wherein at least one of the upper cover portion and or the lower cover portion has a step structure, and the step structure has a shorter length and width as compared to the capacitance-forming portion.

Abstract: A multilayer electronic component includes a body comprising a capacitance-forming portion including a dielectric layer and a plurality of internal electrodes layered with the dielectric layer interposed therebetween, and upper and lower cover portions disposed on upper and lower surfaces of the capacitance-forming portion, respectively; and external electrodes disposed on the body and electrically connected to at least some of the plurality of internal electrodes, respectively, wherein at least one of the upper cover portion and or the lower cover portion has a step structure, and the step structure has a shorter length and width as compared to the capacitance-forming portion.

Abstract: The present inventive concept relates to a system for operating a region-originating development platform, comprising: a service server for coordinating a regional service between a physical card and a mobile terminal of a user, one or more regional member stores, and a regional integration server; and an operation management portal running on the service server, comprising a system portal part used to operate a system within the service server, a platform portal part for managing one or more merchandises offered as the regional service, and a partner portal part for managing partners including member stores, where the regional integration server comprises sub-institution servers in a layered structure to operate in conjunction with one or more base center servers at a lower level, and the mobile terminal runs a service application for providing the regional service and comprises information of at least one mobile card issued upon a request.

Abstract: A method for providing a multi number service using a universal integrated circuit card (UICC) comprises the steps of: according to a command received from the outside of a UICC, selecting any one subscriber identification information set among a plurality of subscriber identification information sets stored in a memory allocated to a subscriber identification information set managing application; and activating the selected subscriber identification information set.

Abstract: A method for providing a multi number service using a universal integrated circuit card (UICC) comprises the steps of: according to a command received from the outside of a UICC, selecting any one subscriber identification information set among a plurality of subscriber identification information sets stored in a memory allocated to a subscriber identification information set managing application; and activating the selected subscriber identification information set.

Abstract: A method for providing a multi number service using a universal integrated circuit card (UICC) comprises the steps of: according to a command received from the outside of a UICC, selecting any one subscriber identification information set among a plurality of subscriber identification information sets stored in a memory allocated to a subscriber identification information set managing application; and activating the selected subscriber identification information set.

Abstract: A method for providing a multi number service using a universal integrated circuit card (UICC) comprises the steps of: according to a command received from the outside of a UICC, selecting any one subscriber identification information set among a plurality of subscriber identification information sets stored in a memory allocated to a subscriber identification information set managing application; and activating the selected subscriber identification information set.

Abstract: Provided is a super junction semiconductor device. The super junction semiconductor device includes a vertical pillar region located in an active region and horizontal pillar regions located in a termination region that are connected with each other while simultaneously not floating the entire pillar region in the termination region. Thus, a charge compensation difference, generated among pillar regions, is caused to be offset, although the length of the termination region is relatively short.

Abstract: A method for providing a multi number service using a universal integrated circuit card (UICC) comprises the steps of: according to a command received from the outside of a UICC, selecting any one subscriber identification information set among a plurality of subscriber identification information sets stored in a memory allocated to a subscriber identification information set managing application; and activating the selected subscriber identification information set.

Abstract: There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.

Abstract: There is provided a super junction semiconductor device. The super junction semiconductor device includes a cell area and a junction termination area disposed on a substrate, and a transition area disposed between the cell area and the junction termination area, and the cell area, the junction termination area, and the transition area each include one or more unit cells comprising a N-type pillar region and a P-type pillar region among a plurality of N-type pillar regions and a P-type pillar regions that are alternated between the cell area and the junction termination area.

Abstract: There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.

Abstract: Provided is a super junction semiconductor device. The super junction semiconductor device includes a vertical pillar region located in an active region and horizontal pillar regions located in a termination region that are connected with each other while simultaneously not floating the entire pillar region in the termination region. Thus, a charge compensation difference, generated among pillar regions, is caused to be offset, although the length of the termination region is relatively short.

Abstract: There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.