Abstract: The present disclosure provides a three-dimensional memory device and a manufacturing method thereof, the three-dimensional memory device including: a plurality of stacked layers; a storage channel structure vertically penetrating the stacked layers and comprising a first channel layer; a select gate structure on the plurality of stacked layers; and a select channel structure vertically penetrating the select gate structure and comprising a second channel layer; wherein an outer sidewall of the second channel layer is in contact with an inner sidewall of the first channel layer.

Abstract: The present disclosure provides a three-dimensional memory comprising: a storage channel structure vertically penetrating a plurality of stacked layers and comprising a first channel layer; a select gate structure on the plurality of stacked layers; and a select channel structure vertically penetrating the select gate structure and comprising: a block layer in contact with the select gate structure, an insulating layer covering the block layer, and a second channel layer in contact with the insulating layer and the first channel layer.

Abstract: The present disclosure provides a three-dimensional memory device and a manufacturing method thereof. The three-dimensional memory device comprises: a plurality of stacked layers; a storage channel structure vertically penetrating the stacked layers and comprising a first channel layer; a select gate structure on the plurality of stacked layers and comprising a conductive layer sandwiched between two dielectric layers; and a select channel structure vertically penetrating the select gate structure and comprising a second channel layer.

Abstract: According to an aspect of the disclosure, a semiconductor device is provided. The semiconductor device includes a stack structure that includes alternating insulating layers and word line layers. The semiconductor device also includes a first channel structure extending through the stack structure, a first top select gate (TSG) layer over the stack structure, and a second TSG layer over the first TSG layer. The semiconductor device further includes a second channel structure extending through the first and second TSG layers, where the second channel structure is positioned over and coupled to the first channel structure.

Abstract: A method for forming a three-dimensional memory device includes forming an alternating dielectric stack on a substrate and forming an opening extending partially through the alternating dielectric stack. The opening exposes sidewalls of the alternating dielectric stack. The method also includes disposing a protection layer in the opening and on the exposed sidewalls of the alternating dielectric stack. The method further includes extending the opening through the alternating dielectric stack and forming channel layers in the extended opening.

Abstract: The three-dimensional memory includes a stack structure which includes: a first stack and a second stack, the first stack including control gate layers and first dielectric layers which are stacked alternately, the second stack including top select gate layers and second dielectric layers which are stacked alternately in the same stacking direction; a plurality of channel structures which run though the stack structure and include charge storage layers, the charge storage layers including a plurality of charge storage portions disposed discontinuously in the stacking direction, the charge storage portions being disposed between the adjacent first dielectric layers; and at least one isolation structure which runs through the top select gate layers and is located between the adjacent channel structures.

Abstract: The present application provides a three-dimensional memory and a fabrication method for the same. The method includes forming a storage stack structure on a substrate and forming a storage channel structure that penetrates the storage stack structure, forming a selection stack structure stacked on the storage stack structure and forming a selection channel structure that penetrates the selection stack structure and is connected to the storage channel structure. The width of the selection channel structure is smaller than the width of the storage channel structure on a plane parallel to the substrate and forming a TSG cut structure that penetrates the selection stack structure. The three-dimensional memory and the fabrication method for the same increases the process window for the TSG cut structure formed between the selection channel structures and improves the storage density.

Abstract: A three-dimensional (3D) memory device includes a doped semiconductor layer, a stack structure, a channel structure, and a semiconductor structure. The stack structure includes a plurality of word lines and a select gate line formed on the doped semiconductor layer. The channel structure extends through the plurality of word lines along a first direction and in contact with the doped semiconductor layer. The semiconductor structure extends through the select gate line along the first direction and in contact with the channel structure. The select gate line extends along a second direction perpendicular to the first direction, and the drain select gate line around the semiconductor structure is insulated from the drain select gate line around an adjacent semiconductor structure. A width of the semiconductor structure is less than a width of the channel structure.

Abstract: A method for forming a three-dimensional memory device includes forming an alternating dielectric stack on a substrate and forming an opening extending partially through the alternating dielectric stack. The opening exposes sidewalls of the alternating dielectric stack. The method also includes disposing a protection layer in the opening and on the exposed sidewalls of the alternating dielectric stack. The method further includes extending the opening through the alternating dielectric stack and forming channel layers in the extended opening.