Patents by Inventor Chanh M. Vuong

Chanh M. Vuong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multilayered through a via
    Patent number: 8178950
    Abstract: A method for forming a through substrate via (TSV) comprises forming an opening within a substrate. An adhesion layer of titanium is formed within the via opening, a nucleation layer of titanium nitride is formed over the adhesion layer, and a tungsten layer is deposited over the nucleation layer, the tungsten layer having a thickness less than or equal to a critical film thickness sufficient to provide for film integrity and adhesion stability. A stress relief layer of titanium nitride is formed over the tungsten layer and a subsequent tungsten layer is deposited over the stress relief layer. The subsequent tungsten layer has a thickness less than or equal to the critical film thickness. The method further includes planarizing to expose the interlevel dielectric layer and a top of the TSV and backgrinding a bottom surface of the substrate sufficient to expose a bottom portion of the TSV.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: May 15, 2012
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Thuy B. Dao, Chanh M. Vuong
  • MULTILAYERED THROUGH A VIA
    Publication number: 20110151659
    Abstract: A method for forming a through substrate via (TSV) comprises forming an opening within a substrate. An adhesion layer of titanium is formed within the via opening, a nucleation layer of titanium nitride is formed over the adhesion layer, and a tungsten layer is deposited over the nucleation layer, the tungsten layer having a thickness less than or equal to a critical film thickness sufficient to provide for film integrity and adhesion stability. A stress relief layer of titanium nitride is formed over the tungsten layer and a subsequent tungsten layer is deposited over the stress relief layer. The subsequent tungsten layer has a thickness less than or equal to the critical film thickness. The method further includes planarizing to expose the interlevel dielectric layer and a top of the TSV and backgrinding a bottom surface of the substrate sufficient to expose a bottom portion of the TSV.
    Type: Application
    Filed: February 28, 2011
    Publication date: June 23, 2011
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: THUY B. DAO, CHANH M. VUONG
  • Multilayered through via
    Patent number: 7964502
    Abstract: A method for forming a through substrate via (TSV) comprises forming an opening within a substrate. An adhesion layer of titanium is formed within the via opening, a nucleation layer of titanium nitride is formed over the adhesion layer, and a tungsten layer is deposited over the nucleation layer, the tungsten layer having a thickness less than or equal to a critical film thickness sufficient to provide for film integrity and adhesion stability. A stress relief layer of titanium nitride is formed over the tungsten layer and a subsequent tungsten layer is deposited over the stress relief layer. The subsequent tungsten layer has a thickness less than or equal to the critical film thickness. The method further includes planarizing to expose the interlevel dielectric layer and a top of the TSV and backgrinding a bottom surface of the substrate sufficient to expose a bottom portion of the TSV.
    Type: Grant
    Filed: November 25, 2008
    Date of Patent: June 21, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Thuy B. Dao, Chanh M. Vuong
  • MULTILAYERED THROUGH VIA
    Publication number: 20100130002
    Abstract: A method for forming a through substrate via (TSV) comprises forming an opening within a substrate. An adhesion layer of titanium is formed within the via opening, a nucleation layer of titanium nitride is formed over the adhesion layer, and a tungsten layer is deposited over the nucleation layer, the tungsten layer having a thickness less than or equal to a critical film thickness sufficient to provide for film integrity and adhesion stability. A stress relief layer of titanium nitride is formed over the tungsten layer and a subsequent tungsten layer is deposited over the stress relief layer. The subsequent tungsten layer has a thickness less than or equal to the critical film thickness. The method further includes planarizing to expose the interlevel dielectric layer and a top of the TSV and backgrinding a bottom surface of the substrate sufficient to expose a bottom portion of the TSV.
    Type: Application
    Filed: November 25, 2008
    Publication date: May 27, 2010
    Inventors: Thuy B. Dao, Chanh M. Vuong