Abstract: An integrated circuit device is disclosed. The integrated circuit device includes a semiconductor die fabricated by a front-end semiconductor process and having oppositely disposed planar surfaces. The semiconductor die is formed with semiconductor devices, power supply circuitry coupled to the semiconductor devices, decoupling capacitance circuitry, and through-vias. The through-vias include a first group of vias coupled to the power supply circuitry and a second group of vias coupled to the decoupling capacitance circuitry. Conductors are formed in a first metal layer disposed on the semiconductor die in accordance with a back-end semiconductor process. The conductors are configured to couple to the first and second groups of through-vias to establish conductive paths from the power supply circuitry to the decoupling capacitance circuitry.

Abstract: An integrated circuit device is disclosed. The integrated circuit device includes a semiconductor die fabricated by a front-end semiconductor process and having oppositely disposed planar surfaces. The semiconductor die is formed with semiconductor devices, power supply circuitry coupled to the semiconductor devices, decoupling capacitance circuitry, and through-vias. The through-vias include a first group of vias coupled to the power supply circuitry and a second group of vias coupled to the decoupling capacitance circuitry. Conductors are formed in a first metal layer disposed on the semiconductor die in accordance with a back-end semiconductor process. The conductors are configured to couple to the first and second groups of through-vias to establish conductive paths from the power supply circuitry to the decoupling capacitance circuitry.

Abstract: An integrated circuit device is disclosed. The integrated circuit device includes a semiconductor die fabricated by a front-end semiconductor process and having oppositely disposed planar surfaces. The semiconductor die is formed with semiconductor devices, power supply circuitry coupled to the semiconductor devices, decoupling capacitance circuitry, and through-vias. The through-vias include a first group of vias coupled to the power supply circuitry and a second group of vias coupled to the decoupling capacitance circuitry. Conductors are formed in a first metal layer disposed on the semiconductor die in accordance with a back-end semiconductor process. The conductors are configured to couple to the first and second groups of through-vias to establish conductive paths from the power supply circuitry to the decoupling capacitance circuitry.

Abstract: An integrated circuit device is disclosed. The integrated circuit device includes a semiconductor die fabricated by a front-end semiconductor process and having oppositely disposed planar surfaces. The semiconductor die is formed with semiconductor devices, power supply circuitry coupled to the semiconductor devices, decoupling capacitance circuitry, and through-vias. The through-vias include a first group of vias coupled to the power supply circuitry and a second group of vias coupled to the decoupling capacitance circuitry. Conductors are formed in a first metal layer disposed on the semiconductor die in accordance with a back-end semiconductor process. The conductors are configured to couple to the first and second groups of through-vias to establish conductive paths from the power supply circuitry to the decoupling capacitance circuitry.

Abstract: An integrated circuit device is disclosed. The integrated circuit device includes a semiconductor die fabricated by a front-end semiconductor process and having oppositely disposed planar surfaces. The semiconductor die is formed with semiconductor devices, power supply circuitry coupled to the semiconductor devices, decoupling capacitance circuitry, and through-vias. The through-vias include a first group of vias coupled to the power supply circuitry and a second group of vias coupled to the decoupling capacitance circuitry. Conductors are formed in a first metal layer disposed on the semiconductor die in accordance with a back-end semiconductor process. The conductors are configured to couple to the first and second groups of through-vias to establish conductive paths from the power supply circuitry to the decoupling capacitance circuitry.

Abstract: An integrated circuit device is disclosed. The integrated circuit device includes a semiconductor die fabricated by a front-end semiconductor process and having oppositely disposed planar surfaces. The semiconductor die is formed with semiconductor devices, power supply circuitry coupled to the semiconductor devices, decoupling capacitance circuitry, and through-vias. The through-vias include a first group of vias coupled to the power supply circuitry and a second group of vias coupled to the decoupling capacitance circuitry. Conductors are formed in a first metal layer disposed on the semiconductor die in accordance with a back-end semiconductor process. The conductors are configured to couple to the first and second groups of through-vias to establish conductive paths from the power supply circuitry to the decoupling capacitance circuitry.

Abstract: In a transceiver system a first interface receives data from a first channel using a first clock signal and transmits data to the first channel using a second clock signal. A second interface receives data from a second channel using a third clock signal and transmits data to the second channel using a fourth clock signal. A re-timer re-times data received from the first channel using the first clock signal and retransmits the data to the second channel using the fourth clock signal.

Abstract: In a transceiver system a first interface receives data from a first channel using a first clock signal and transmits data to the first channel using a second clock signal. A second interface receives data from a second channel using a third clock signal and transmits data to the second channel using a fourth clock signal. A re-timer re-times data received from the first channel using the first clock signal and retransmits the data to the second channel using the fourth clock signal.

Abstract: An integrated circuit is described. The integrated circuit includes an interface circuit that includes a transmitter and a receiver. A generator in the integrated circuit is selectively coupled to the transmitter. The generator is to provide a test sequence that is output by the transmitter during a test mode of operation. A memory in the integrated circuit is selectively coupled to the generator and the receiver. The memory is to receive and synchronize the test sequence and a signal corresponding to the test sequence that is received by the receiver. A logic circuit in the integrated circuit is to compare the test sequence and the signal.

Abstract: In a transceiver system a first interface receives data from a first channel using a first clock signal and transmits data to the first channel using a second clock signal. A second interface receives data from a second channel using a third clock signal and transmits data to the second channel using a fourth clock signal. A re-timer re-times data received from the first channel using the first clock signal and retransmits the data to the second channel using the fourth clock signal.

Abstract: In a transceiver system a first interface receives data from a first channel using a first clock signal and transmits data to the first channel using a second clock signal. A second interface receives data from a second channel using a third clock signal and transmits data to the second channel using a fourth clock signal. A re-timer re-times data received from the first channel using the first clock signal and retransmits the data to the second channel using the fourth clock signal.

Abstract: A transceiver device comprises a transmitter to transmit signals over a plurality of conductors to a memory device. An interface receives control information from a serial communication path coupled to a controller device. The control information is provided to the memory device as the signals using the transmitter. A register stores a control parameter that specifies a drive strength adjustment to the signals to transmit over the plurality of conductors to the memory device using the transmitter.

Abstract: A receiver adapted to be coupled to a data bus and configured to receive data in accordance with a receive clock includes first and second delay-locked loops. The first delay-locked loop is configured to generate a plurality of phase vectors from a first reference clock, and the second delay-locked loop is coupled to the first delay-locked loop and configured to generate the receive clock from at least one phase vector selected from the plurality of phase vectors and a second reference clock.

Abstract: A transceiver comprises a first interface to receive a first signal, through a first channel, from a memory device. A transmitter transmits a second signal that represents the first signal, through a second channel, to a master device. A plurality of registers stores a plurality of values provided by the master device. The plurality of values includes a first value that specifies a transmit timing adjustment to the second signal to transmit to the master device by the transmitter.

Abstract: In a transceiver system a first interface receives data from a first channel using a first clock signal and transmits data to the first channel using a second clock signal. A second interface receives data from a second channel using a third clock signal and transmits data to the second channel using a fourth clock signal. A re-timer re-times data received from the first channel using the first clock signal and retransmits the data to the second channel using the fourth clock signal.

Abstract: A transceiver device comprises a transmitter to transmit signals over a plurality of conductors to a memory device. An interface receives control information from a serial communication path coupled to a controller device. The control information is provided to the memory device as the signals using the transmitter. A register stores a control parameter that specifies a drive strength adjustment to the signals to transmit over the plurality of conductors to the memory device using the transmitter.

Abstract: A transceiver comprises a first interface to receive a first signal, through a first channel, from a memory device. A transmitter transmits a second signal that represents the first signal, through a second channel, to a master device. A plurality of registers stores a plurality of values provided by the master device. The plurality of values includes a first value that specifies a transmit timing adjustment to the second signal to transmit to the master device by the transmitter.

Abstract: Disclosed is an output driver having an output port for outputting a data signal, a level shifter for driving a current to the output port in response to a current control input, an adjustable impedance controller for generating an impedance adjustment signal; an output impedance compensator for adjusting the impedance of the level shifter in accordance with the impedance adjustment signal and in accordance with a reference voltage, and a tracking circuit, including a process and temperature monitor responsive to manufacturing process and temperature variations of the output driver, a frequency monitor responsive to the frequency of an input clock signal, and a voltage supply monitor responsive to an internal power supply voltage. The process and temperature monitor, frequency monitor and voltage supply monitor are interconnected so as to generate the reference voltage.

Abstract: A technique for voltage level shifting in input circuitry is disclosed. In one exemplary embodiment, the technique may be realized as a method for voltage level shifting input signals. This method may comprise receiving first and second input signals having first and second voltage levels, respectively, and then differentially amplifying the first and second input signals so as to generate first and second amplified voltage signals having first and second amplified voltage levels, respectively, wherein the first and second amplified voltage signals are substantially complementary. This method may then comprise reducing the first and second amplified voltage levels of the first and second amplified voltage signals so as to generate first and second level shifted amplified voltage signals having first and second level shifted amplified voltage levels, respectively.

Abstract: A circuit includes a first node having a first variable voltage and a second node having a second variable voltage. A clock signal generates the first variable and second variable voltages. A first transistor is coupled to the first node and provides a first current responsive to a first control voltage being applied to the first transistor gate. A second transistor is coupled to the second node and provides a second current responsive to a second control voltage being applied to the second transistor gate. A first control circuit is coupled to the first transistor gate and the second node. The first control circuit provides the first control voltage responsive to the first variable voltage. A second control circuit is coupled to the second transistor gate and the first node. The second control circuit provides the second control voltage responsive to the second variable voltage. The first and second currents are used to provide a duty cycle correction signal.