Abstract: Provided is an electrical steel sheet comprising: a groove formed in a surface of a steel sheet, wherein the groove includes a bottom surface, a first side surface extending from the bottom surface, and a second side surface extending from the bottom surface in opposite to the first side surface, wherein the groove has a depth from the surface to the bottom surface, a width in a rolling direction of the steel sheet, and a length in a width direction of the steel sheet, and wherein the groove is formed through laser-irradiation and removal of melt produced by the laser-irradiation; an opening defined by the bottom surface, the first side surface and the second side surface; and a first solidification portion formed on the first side surface of the groove. The first solidification portion is formed by a solidification of part of the melt produced from the laser-irradiation.

Abstract: Provided is an electrical steel sheet comprising: a groove formed in a surface of a steel sheet, wherein the groove includes a bottom surface, a first side surface extending from the bottom surface, and a second side surface extending from the bottom surface in opposite to the first side surface, wherein the groove has a depth from the surface to the bottom surface, a width in a rolling direction of the steel sheet, and a length in a width direction of the steel sheet, and wherein the groove is formed through laser-irradiation and removal of melt produced by the laser-irradiation; an opening defined by the bottom surface, the first side surface and the second side surface; and a first solidification portion formed on the first side surface of the groove. The first solidification portion is formed by a solidification of part of the melt produced from the laser-irradiation.

Abstract: An oriented electrical steel sheet and a method of manufacturing the same are provided, and in a method of manufacturing an oriented electrical steel sheet including processes of producing a hot rolled plate by hot rolling a steel slab, performing or omitting hot rolled plate annealing, performing cold rolling, performing decarburization and nitride annealing, and performing final high temperature annealing, the decarburization and nitride annealing process is performed in a dew point range of 35-55° C., and in the final annealing process, a glassless additive including MgO is applied.

Abstract: Provided is a grain-oriented electric steel sheet having superior magnetic property and to a grain-oriented electric steel sheet including 2.0 to 4.5 weight % of Si, 0.001 to 0.10 weight % of C, 0.010 weight % or lower of Al, 0.08 weight % or lower of Mn, 0.005 weight % or lower of N, 0.002 to 0.050 weight % of S, the remainder being Fe and other unavoidable impurities. The steel sheet having been subjected to secondary recrystallization using at least any one of grain boundary-segregated elementary S and an FeS precipitate as a grain growth inhibitor.

Abstract: An oriented electrical steel sheet and a method of manufacturing the same are provided, and in a method of manufacturing an oriented electrical steel sheet including processes of producing a hot rolled plate by hot rolling a steel slab, performing or omitting hot rolled plate annealing, performing cold rolling, performing decarburization and nitride annealing, and performing final high temperature annealing, the decarburization and nitride annealing process is performed in a dew point range of 35-55° C., and in the final annealing process, a glassless additive including MgO is applied.

Abstract: Provided is a grain-oriented electric steel sheet having superior magnetic property and to a grain-oriented electric steel sheet including 2.0 to 4.5 weight % of Si, 0.001 to 0.10 weight % of C, 0.010 weight % or lower of Al, 0.08 weight % or lower of Mn, 0.005 weight % or lower of N, 0.002 to 0.050 weight % of S, the remainder being Fe and other unavoidable impurities. The steel sheet having been subjected to secondary recrystallization using at least any one of grain boundary-segregated elementary S and an FeS precipitate as a grain growth inhibitor.

Abstract: Provided is a grain-oriented electric steel sheet and a method for manufacturing same, the steel sheet having superior magnetic properties. The method comprises heating a slab comprising 2.0 to 4.5 weight % of Si, 0.001 to 0.10 weight % of C, 0.010 weight % or lower of Al, 0.08 weight % or lower of Mn, 0.005 weight % or lower of N, 0.002 to 0.050 weight % of S, the remainder being Fe and other unavoidable impurities, performing hot-rolling of the heated slab, performing cold-rolling one time or two or more times including an intermediate annealing, performing decarbonization and re-crystallizing annealing, and performing secondary re-crystallizing annealing.

Abstract: A method for manufacturing an electrical steel sheet is provided. The method for manufacturing an electrical steel sheet includes forming a groove having first and second side surfaces and a bottom surface by melting a surface of a steel sheet by laser irradiation, and forming an opening by removing melted byproducts of the steel sheet formed on the first and second side surfaces and the bottom surface through air blowing or suctioning to expose at least one surface of the first side surface, the second side surface, and the bottom surface in the forming of the groove.

Abstract: Provided is a grain-oriented electric steel sheet and a method for manufacturing same, the steel sheet having superior magnetic properties. The method comprises heating a slab comprising 2.0 to 4.5 weight % of Si, 0.001 to 0.10 weight % of C, 0.010 weight % or lower of Al, 0.08 weight % or lower of Mn, 0.005 weight % or lower of N, 0.002 to 0.050 weight % of S, the remainder being Fe and other unavoidable impurities, performing hot-rolling of the heated slab, performing cold-rolling one time or two or more times including an intermediate annealing, performing decarbonization and re-crystallizing annealing, and performing secondary re-crystallizing annealing.

Abstract: An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.

Abstract: An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.

Abstract: An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.

Abstract: A method for forming a hemispherical grain polysilicon layer on an amorphous silicon film increases the surface area of the layer by first forming silicon crystal nuclei on the film, and then enlarging the nuclei before annealing. The nuclei are formed on the amorphous silicon film loading a substrate having the amorphous silicon film into a chamber and injecting a silicon source gas into the chamber at a first, low flow rate which allows the pressure of the chamber to be reduced, thereby increasing the density of the crystal nuclei. A silicon source gas is then injected into the chamber at a second, higher flow rate, thereby enlarging the silicon crystal nuclei on the amorphous layer. The resulting structure is then annealed to form a hemispherical grain polysilicon layer having a large surface area due to the irregular surface of the polysilicon layer.

Abstract: An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.

Abstract: A method of forming a hemispherical grained silicon electrode includes the steps of forming an amorphous silicon layer on an integrated circuit substrate, and heating the integrated circuit substrate and the amorphous silicon layer to a first deposition temperature. The amorphous silicon layer is exposed to a source gas including silicon while maintaining the first deposition temperature thereby forming silicon crystal nuclei on a surface of the amorphous silicon layer. The temperature of the integrated circuit substrate is lowered to a second deposition temperature wherein the second deposition temperature is less than the first deposition temperature. The silicon crystal nuclei are exposed to the source gas including silicon while maintaining the second deposition temperature thereby increasing a size of the silicon crystal nuclei.