Abstract: A metallurgic implantation apparatus of metal ions having a large emitting surface, a considerable flux and a controllable implantation depth comprises within an implantation chamber held in vacuo at least one vacuum arc ion source (1, 2, 3, 4) from which the ions (5) are extracted and projected onto a target plate (9) by means of an extraction and focusing electrode (6,7) and of an acceleration electrode (8) polarized at a very high and at a low voltage, respectively. The target plate (9) bombarded by the projection of ions emits a flux of secondary electrons, which are repelled by a suppression electrode (10) polarized negatively with respect to the target plate connected to ground.