Abstract: A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

Abstract: Disclosed are a filter fastening unit assembly and a filter fastening unit. The filter fastening unit assembly includes a filter, and a filter fastening unit, to which the filter is coupled, the filter fastening unit includes a base having a base opening opened toward a first direction that is one direction that is perpendicular to an upward/downward direction, a housing disposed in the base opening, connected to the base to be movable upwards and downwards, and having a housing opening opened toward the first direction, a filter coupling part coupled to an upper side of the base, and including an introduction passage, though which water is introduced, and a discharge passage, through which the water is discharged, and a lever connected to the base to be rotatable, and connected to the housing to be rotatable.

Abstract: A semiconductor device and a related fabrication method are provided. The semiconductor device includes a conductive line on a substrate, a capping pattern that extends along an upper surface of the conductive line, a spacer structure that extends along a side surface of the conductive line and a side surface of the capping pattern, a buried contact electrically connected to the substrate, on a side surface of the spacer structure, a barrier conductive film extending along the buried contact and the spacer structure, and a landing pad electrically connected to the buried contact, on the barrier conductive film and the capping pattern, wherein an upper part of the spacer structure includes a spacer recess that is lower than or equal to an uppermost surface of the capping pattern, and the barrier conductive film extends along the spacer recess and does not cover the uppermost surface of the capping pattern.