Abstract: A battery assembly includes a battery module stack in which at least one battery module is stacked and formed, a cover portion coupled to a side of the battery module stack, and a substrate portion coupled to an external surface of the cover portion, wherein the cover portion includes a cover member coupled to the battery module stack, and a protrusion member protruding in an outward direction from the cover member and in contact with an internal surface of the substrate portion, the substrate portion includes an overlapping region which is a region overlapping the protrusion member when viewed in the outward direction, a through-hole passing through the overlapping region in the outward direction is formed in the overlapping region, and a pad region having electrically conductive properties is formed in a region surrounding the through-hole in the substrate portion.

Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.

Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 ? or more to 144 ? or less.

Abstract: The present invention measures a temperature of a heating element and includes a first insulating layer having an electrical insulating function; a sensor electrode provided on an upper side of the first insulating layer and having a change in intensity of a current according to a change in heat generated by the heating element; and a second insulating layer covering an upper side of the sensor electrode, wherein the sensor electrode is disposed in parallel with the first insulating layer and having a plurality of bent portions from one end of the sensor electrode to the other end of the sensor electrode.

Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive layer and a metal oxide layer stacked on the conductive layer, wherein the metal oxide layer comprises molybdenum (Mo), tantalum (Ta), and oxygen (O). The conductive layer includes a first metal layer on the first base, and a second metal layer between the first metal layer and the metal oxide layer. The second metal layer has a higher electrical conductivity than the first metal layer, and a thickness of the second metal layer is greater than a thickness of the first metal layer.

Abstract: A memory system may include: a nonvolatile memory device comprising a plurality of memory blocks; and a controller suitable for checking a read operation time, a read level class, an error occurrence, and an error occurrence class when performing the read operation on each of the memory blocks, classifying the memory blocks into various classes based on a result of the checking, and differently setting a durability parameter for each of the memory blocks based on a result of the classifying of the memory blocks.

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 ? or more to 144 ? or less.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 ? or more to 144 ? or less.

Abstract: An electronic device comprising: a controller; and a non-transitory machine-readable storage medium configured to output status information in response to a status check command, and store instructions which are executed by the controller, wherein the instructions comprise: an instruction for generating an internal command to be serviced by the non-transitory machine-readable storage medium; an instruction for generating the status check command to transfer to the non-transitory machine-readable storage medium at a point of time that a waiting time corresponding to the internal command has elapsed after the internal command is transferred to the non-transitory machine-readable storage medium; an instruction for determining the operation status of the non-transitory machine-readable storage medium based on the status information; and an instruction for variably setting the waiting time based on the operation status.

Abstract: A flexible electrode for a display device may include a conductive structure including a lower conductive pattern disposed on a substrate and an upper conductive pattern disposed on the lower conductive pattern, and an electrode layer disposed on the substrate, the electrode layer being adjacent to the conductive structure. A width of a top surface of the lower conductive pattern may be less than a width of a bottom surface of the upper conductive pattern.

Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

Abstract: A memory system may include: a nonvolatile memory device comprising a plurality of memory blocks; and a controller suitable for checking a read operation time, a read level class, an error occurrence, and an error occurrence class when performing the read operation on each of the memory blocks, classifying the memory blocks into various classes based on a result of the checking, and differently setting a durability parameter for each of the memory blocks based on a result of the classifying of the memory blocks.

Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoxTayOz, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.

Abstract: A memory system may include: a nonvolatile memory device comprising a plurality of memory blocks; and a controller suitable for checking a read operation time, a read level class, an error occurrence, and an error occurrence class when performing the read operation on each of the memory blocks, classifying the memory blocks into various classes based on a result of the checking, and differently setting a durability parameter for each of the memory blocks based on a result of the classifying of the memory blocks.

Abstract: An electronic device comprising: a controller; and a non-transitory machine-readable storage medium configured to output status information in response to a status check command, and store instructions which are executed by the controller, wherein the instructions comprise: an instruction for generating an internal command to be serviced by the non-transitory machine-readable storage medium; an instruction for generating the status check command to transfer to the non-transitory machine-readable storage medium at a point of time that a waiting time corresponding to the internal command has elapsed after the internal command is transferred to the non-transitory machine-readable storage medium; an instruction for determining the operation status of the non-transitory machine-readable storage medium based on the status information; and an instruction for variably setting the waiting time based on the operation status.

Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoxTayOz, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.

Abstract: A method of a memory system including memory regions includes performing error corrections for chunks in each of the memory regions, and computing trust levels corresponding respectively to the memory regions based on the error corrections, setting test-reading periods corresponding respectively to the memory regions, based on the trust levels for the memory regions, counting a number of normal-reading times for each of the memory regions, and managing access counts corresponding respectively to the memory regions based on the counted numbers and when an access count for a first memory region among the memory regions reaches a time corresponding to a test-reading period for the first memory region, performing one or more test-readings for the first memory region.