Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.

Abstract: An infrared gas burner for a gas cooker including a mixing tube arranged between a gas valve and a burner unit and adapted to mix gas supplied from the gas valve with air, a support member for supporting a ceramic plate within the burner unit in such a manner that the gas mixture emerging from the mixing tube passes through flame holes of the ceramic plate, a temperature control unit adapted to measure a temperature of flames generated by the burner unit, thereby controlling the amount of gas supplied to the burner unit based on the measured temperature, and a cover unit disposed over the burner unit and adapted to transfer infrared radiant heat and exhaust heat generated at the burner unit to a cooking pot laid thereon. The mixing tube is configured to mix gas with air in an optimum state for the combustion of the gas while uniformly distributing the gas mixture through flame holes of a ceramic plate, the transfer of heat to the body of a burner unit is reduced, thereby minimizing loss of heat.