Abstract: Disclosed are a magnetic core structure and a magnetic component. The magnetic core structure includes N winding columns and two cover plates, and N is a positive integer, wherein each winding column is provided with a first hollow channel, the two cover plates are disposed at two ends of each winding column, each cover plate is provided with N first through holes, the N winding columns are in a one-to-one correspondence with the N first through holes of each cover plate, and the first hollow channel of each winding column is communicated with the first through holes located on two sides thereof and corresponding thereto. Therefore, the channels for air flow can be added, so that the heat dissipation efficiency is improved when the magnetic core structure is applied to the magnetic component.

Abstract: Disclosure is a compound with one or more arm(s) for drug conjugation and a conjugate including the compound so as to provide high drug-to-moiety ratio and conjugate more drugs to the conjugate.

Abstract: In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. The first semiconductor layers, the second semiconductor layer and an upper portion of the fin structure at a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, are etched. A dielectric layer is formed over the etched upper portion of the fin structure. A source/drain epitaxial layer is formed. The source/drain epitaxial layer is connected to ends of the second semiconductor wires, and a bottom of the source/drain epitaxial layer is separated from the fin structure by the dielectric layer.

Abstract: A panel assembly includes a panel frame having one or more air outlets surrounding a reference axis. The one or more air outlets include an adjustable port having a port inner edge close to the reference axis and a port outer edge away from the reference axis. On the reference axis, a projection of the port inner edge is located on a side of a projection of the port outer edge facing an outer end of the reference axis. The panel assembly further includes an adjustable plate movably arranged at the adjustable port and having a low-wind-feeling position, at which a plate inner edge of the adjustable plate is close or linked to the port inner edge, and a radial air outlet configured to output air in a direction away from the reference axis is formed between the port outer edge and a plate outer edge of the adjustable plate.

Abstract: In various examples, a technique for securely transmitting CAN (Controller Area Network) messages is disclosed that includes receiving, using a cryptographic engine, a message from an application to be transmitted over a CAN (Controller Area Network) bus, wherein the cryptographic engine executes a secure firmware and is implemented on an on-die discrete processor. The technique further includes accessing, using the secure firmware, a key from a plurality of keys associated with an authentication process from a secure memory associated with the cryptographic engine. Additionally, the technique includes computing an authentication tag using the key and the message and transmitting the message with the authentication tag over the CAN bus to a destination address.

Abstract: Multiple voltage threshold integrated circuit structures with local layout effect tuning, and methods of fabricating multiple voltage threshold integrated circuit structures with local layout effect tuning, are described. For example, an integrated circuit structure includes a first fin structure or vertical arrangement of horizontal nanowires. A second fin structure or vertical arrangement of horizontal nanowires is laterally spaced apart from the first fin structure or vertical arrangement of horizontal nanowires. An N-type gate structure is over the first fin structure or vertical arrangement of horizontal nanowires. A P-type gate structure is over the second fin structure or vertical arrangement of horizontal nanowires, the P-type gate structure in contact with the N-type gate structure with a PN boundary between the P-type gate structure and the N-type gate structure.

Abstract: The present invention provides solutions for identifying influential training images in diffusion models by calculating importance scores through gradient-based attribution. The system uses a novel Diffusion-Tracing with the Randomly projected After Kernel (D-TRAK) method for identifying and scoring the influence of individual training data points on the outputs of diffusion models, thereby enabling the accurate and interpretable attribution of data in generative models. This approach allows for the identification of training images that have a significant positive or negative influence on a specific generated output image. By focusing on the final checkpoint data, the system reduces computational costs while providing accurate attribution of image generation results. This invention has applications in copyright protection, and model transparency, particularly in identifying the contribution of specific training data to generated outputs.

Abstract: The present invention provides solutions for reducing biases in text-to-image diffusion models, particularly biases related to gender, race, and their intersections in occupational prompts. The invention introduces a fairness framework based on distributional alignment, comprising two core technical solutions: (1) a distributional alignment loss that adjusts the output of the model toward user-defined target distributions, and (2) an adjusted direct finetuning (adjusted DFT) of the model's sampling process using an adjusted gradient to optimize losses based on generated images. These techniques reduce bias while supporting diverse perspectives on fairness, such as age-controlled debiasing across multiple concepts. The method's scalability allows for debiasing multiple prompts simultaneously, improving the inclusivity of diffusion model outputs across varied demographics.

Abstract: Trench contact structures with etch stop layers, and methods of fabricating trench contact structures with etch-stop layers, are described. In an example, an integrated circuit structure includes a fin structure. An epitaxial source or drain structure is on the fin structure. An isolation structure is laterally adjacent to sides of the fin structure. A dielectric layer is on at least a portion of a top surface of the isolation structure and partially surrounds the epitaxial source or drain structure and leaves an exposed portion of the epitaxial source or drain structure. A conductive trench contact structure is on the exposed portion of the epitaxial source or drain structure. The conductive trench contact structure does not extend into the isolation structure.

Abstract: Integrated circuit structures having deep via bar width tuning are described. For example, an integrated circuit structure includes a plurality of gate lines extending over first and second semiconductor nanowire stack channel structures or fin structures. A plurality of trench contacts is intervening with the plurality of gate lines. A conductive structure is between the first and second semiconductor nanowire stack channel structures or fin structures, the conductive structure having a first width in a first region and a second width in a second region between the first and second semiconductor nanowire stack channel structures or fin structures, the second width different than the first width.

Abstract: Integrated circuit structures having internal spacers for 2D channel materials, and methods of fabricating integrated circuit structures having internal spacers for 2D channel materials, are described. For example, an integrated circuit structure includes a stack of two-dimensional (2D) material nanowires. A gate structure is vertically around the stack of 2D material nanowires. Internal gate spacers are between vertically adjacent ones of the stack of 2D material nanowires and laterally adjacent to the gate structure. The 2D material nanowires are recessed relative to the internal gate spacers. Conductive contact structures are at corresponding ends of the stack of 2D material nanowires, the conductive contact structures adjacent to the internal gate spacers and vertically overlapping with the internal gate spacers.

Abstract: A method includes forming an interlayer dielectric (ILD) layer over a transistor; forming a first inter-metal dielectric (IMD) layer over the ILD layer; etching a via opening extending through the first IMD layer; forming a first 2-D material layer lining along sides and a bottom of the via opening; depositing a first metal in the via opening and over the first 2-D material layer; performing a chemical mechanism polishing (CMP) process to the first metal until the first IMD layer is exposed; forming a second IMD layer over the first IMD layer; etching a trench in the second IMD layer; forming a second 2-D material layer lining along sides and a bottom of the trench; and depositing a second metal over the second 2-D material layer at a temperature lower than a temperature of depositing the first metal over the first 2-D material layer.

Abstract: The present invention relates to a flow control method for a high-accuracy and high-stiffness hydrostatic device, comprising: a main body and an auxiliary body; the upper surface of the main body forms a first flow channel, and a lug boss is formed on the first flow channel; the upper surface of the main body forms a second flow channel; the middle of the main body is concave down to form a pressure stabilizing cavity; the end of the first flow channel is provided with first throttling holes; the second flow channel is provided with a main oil hole; the first flow channel is provided with an oil distribution channel; the lug boss is provided with a second throttling hole; a bump matched with a bearing platform is formed on the bottom of the auxiliary body; a film sheet is arranged between the bump and the bearing platform; and the surface of the bump is provided with a groove.

Abstract: Disclosed are emulsion gel with both a freshness indication and a low migration rate, and a preparation method therefor. Lipase and organic acid are used and subjected to hydrophobic modification of anthocyanins to obtain acylated anthocyanins, the acylated anthocyanins and oil-phase gel are then dissolved in vegetable oil to form an oil phase, while a sodium alginate aqueous solution is used as a water phase, the oil phase and the water phase are mixed and subjected to high-speed shearing, and calcium carbonate and glucono-?-lactone are finally added for high-speed shearing to form emulsion gel. The emulsion gel prepared in the present disclosure has both a freshness indication and a low migration rate, and the preparation method of the present disclosure is simple, green, pollution-free and low energy consumption.

Abstract: Implementations for a space-optimized graph database system are provided. One implementation includes a computing system comprising: processing circuitry and memory storing instructions that causes the processing circuitry to: store a graph database comprising an initial tree graph storing a plurality of data entries, each data entry comprising a respective field identifier; receive a query to update the graph database, wherein the query comprises a request to add a new data entry; determine a splitting event to perform based on one or more predetermined criteria; generate a new tree graph corresponding to a field identifier of the new data entry by splitting off a subset of the plurality of data entries of the initial tree graph, wherein the subset comprises all data entries of the initial tree graph that correspond to the field identifier of the new data entry; and update the new tree graph in accordance with the query.

Abstract: A method, apparatus and device for allocating edge-computation resources and a computer-readable storage medium. The method includes: acquiring WiFi-connection data of terminal devices to be allocated; according to the WiFi-connection data and resource-occupation states of the edge servers, determining target edge servers that the terminal devices to be allocated individually correspond to; and connecting the terminal devices to be allocated to the individually corresponding target edge servers, and controlling the target edge servers to start up services of the individually corresponding terminal devices to be allocated. The present application may automatically select a balanced load-sharing networking strategy in response to the initial networking of a distributed WiFi edge-computation system or a WiFi terminal device being newly added, to realize the effect of load sharing of the edge-computation resources, and improve the efficiency of the application of edge computation.

Abstract: Implementations for performing workload-aware space reclamation are provided. One example includes a computing system comprising: processing circuitry and memory storing instructions that, during execution, causes the processing circuitry to: track extent usage characteristics for each of a plurality of extents storing data for a graph database; and perform memory reclamation to reclaim storage areas corresponding to invalid data, wherein performing the memory reclamation comprises: generating a list of extents to be reclaimed based on the tracked extent usage characteristics; and reclaiming memory space on the plurality of extents in order based on the list of extents.

Abstract: Implementations for I/O efficient synchronization on a graph database are provided. One example includes a computing system comprising: processing circuitry and memory storing instructions that, during execution, causes the processing circuitry to: implement the graph database using at least: a read-write node and a read-only node operating in cache memory; and a shared storage for data persistence, wherein the shared storage stores a mapping table of the graph database; receive an update query; update the read-write node based on the update query; write, using the read-write node, a set of logs corresponding to the update query to a write-ahead log journal in the shared storage; and retrieve, using the read-only node, the set of logs from the write-ahead log journal.

Abstract: The present disclosure is related to a file processing method, electronic apparatus and storage medium, the file processing method including: updating a file list according to file access information for a file in a storage device, wherein the file list contains file inode numbers of files to be defragmented; defragmenting the files to be defragmented corresponding to the file inode numbers in the storage device, according to the updated file list, in response to the occurrence of a triggering event.

Abstract: Techniques are provided to form an integrated circuit having an airgap spacer between at least a transistor gate structure and an adjacent source or drain contact. In one such example, a FET (field effect transistor) includes a gate structure that extends around a fin or any number of nanowires (or nanoribbons or nanosheets, as the case may be) of semiconductor material. The semiconductor material may extend in a first direction between source and drain regions while the gate structure extends over the semiconductor material in a second direction. Airgaps are provided in the regions between the gate structures and the adjacent source/drain contacts. The airgaps have a low dielectric constant (e.g., around 1.0) to reduce the parasitic capacitance between the conductive structures.