Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes two pixel arrays each having multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by a time ratio of the line time difference and the frame period. The TDI sensor doubles a number of times of integrating pixel data corresponding to the same position of a scene by arranging two separately operated pixel arrays.

Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by the time ratio of the line time difference and the frame period. The TDI sensor further records defect pixels of a pixel array such that in integrating pixel data to integrators, the pixel data associated with the defect pixels is not integrated into corresponding integrators.

Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes two pixel arrays each having multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by a time ratio of the line time difference and the frame period. The TDI sensor doubles a number of times of integrating pixel data corresponding to the same position of a scene by arranging two separately operated pixel arrays.

Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by the time ratio of the line time difference and the frame period. The TDI sensor further records defect pixels of a pixel array such that in integrating pixel data to integrators, the pixel data associated with the defect pixels is not integrated into corresponding integrators.

Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by the time ratio of the line time difference and the frame period. The TDI sensor further records defect pixels of a pixel array such that in integrating pixel data to integrators, the pixel data associated with the defect pixels is not integrated into corresponding integrators.

Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes two pixel arrays each having multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by a time ratio of the line time difference and the frame period. The TDI sensor doubles a number of times of integrating pixel data corresponding to the same position of a scene by arranging two separately operated pixel arrays.

Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by a time ratio of the line time difference and the frame period. The line time difference of the TDI sensor is changeable without changing the separation space.

Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by a time ratio of the line time difference and the frame period. The line time difference of the TDI sensor is changeable without changing the separation space.

Abstract: A surge current compensating circuit has a compensating current generation unit, a bias unit, and a switch unit, for compensating a surge current drawn from a supply power after an output signal of a specific circuit transits. The compensating current generation unit is electrically coupled to the output stage of the specific circuit. The bias unit is electrically coupled to the compensating current generation unit through the switch unit. Before the output signal transits, the switch unit is disabled and the compensating current generation unit is enabled, so as to draw the compensating current from the supply power. After the output signal transits, the switch unit is enabled and the compensating current generation unit is disabled, such that the compensating current is not drawn from the supply power.

Abstract: A surge current compensating circuit has a compensating current generation unit, a bias unit, and a switch unit, for compensating a surge current drawn from a supply power after an output signal of a specific circuit transits. The compensating current generation unit is electrically coupled to the output stage of the specific circuit. The bias unit is electrically coupled to the compensating current generation unit through the switch unit. Before the output signal transits, the switch unit is disabled and the compensating current generation unit is enabled, so as to draw the compensating current from the supply power. After the output signal transits, the switch unit is enabled and the compensating current generation unit is disabled, such that the compensating current is not drawn from the supply power.

Abstract: The present invention discloses a sensor device with dark current compensation and control method thereof. The sensor device includes: a sensor circuit, for sensing a physical property or a chemical property to generate an analog sensing signal; a dark current compensation circuit, which is coupled to the sensor circuit, for processing the analog sensing signal and generating an analog compensated signal according to a reference signal; and a convertor circuit, which is coupled to the dark current compensation circuit, for generating a digital sensing signal according to the analog compensated signal.

Abstract: The present disclosure relates to an operation and management system providing applications for mobile devices and an electronic transaction method and an application generator thereof.

Abstract: The present invention discloses a sensor device with dark current compensation and control method thereof. The sensor device includes: a sensor circuit, for sensing a physical property or a chemical property to generate an analog sensing signal; a dark current compensation circuit, which is coupled to the sensor circuit, for processing the analog sensing signal and generating an analog compensated signal according to a reference signal; and a convertor circuit, which is coupled to the dark current compensation circuit, for generating a digital sensing signal according to the analog compensated signal.

Abstract: The present invention discloses a high dynamic range imager circuit and a method for reading high dynamic range image with an adaptive conversion gain. The high dynamic range image circuit includes a variable capacitor. The capacitance of the variable capacitor is adjusted according to sensed light intensity or by internal feedback control, to adaptively adjust the conversion gain of the high dynamic range image circuit as it reads a signal which relates to a pixel image sensed by an image sensor device. In each cycle, the signal can be read twice or more with different dynamic ranges, to enhance the accuracy of the signal.

Abstract: The present invention discloses a high dynamic range imager circuit and a method for reading high dynamic range image with an adaptive conversion gain. The high dynamic range image circuit includes a variable capacitor. The capacitance of the variable capacitor is adjusted according to sensed light intensity or by internal feedback control, to adaptively adjust the conversion gain of the high dynamic range image circuit as it reads a signal which relates to a pixel image sensed by an image sensor device. In each cycle, the signal can be read twice or more with different dynamic ranges, to enhance the accuracy of the signal.

Abstract: A method and a system thereof for adjusting a temperature sensing element are proposed. The temperature sensing element is coupled to a control chip and has a temperature sensing resistor. Firstly, a memory area of the control chip is set to pre-store a temperature standard, and a predetermined standard is defined such that the temperature standard is equal to the predetermined standard ±?T. Then, the temperature sensing element is placed in and thermal equilibrates with a constant-temperature environment. The temperature sensing resistor is oscillated until a temperature measured by the temperature sensing element is consistent with the predetermined standard such that a first oscillation time is determined. A reference resistor is provided and oscillated based on the first oscillation time to determine an updated temperature standard, and then the updated temperature standard is stored to the memory area to replace the temperature standard pre-stored in the memory area.

Abstract: A capacitor structure is provided. The capacitor structure is configured in a substrate. The capacitor structure includes a plurality of electrode sets, at least a first conductive plug and at least a second conductive plug. The electrode sets correspond with each other and are disposed in different layers of the substrate. Each electrode set comprises a first electrode and a second electrode surrounding the former. In addition, the first conductive plug and the second conductive plug are disposed between two adjacent electrode sets. First electrodes of two adjacent electrode sets correspond with each other and are electrically connected to each other through the first conductive plug. Similarly, second electrodes of two adjacent electrode sets correspond with each other and are electrically connected to each other through the second conductive plug.

Abstract: A capacitor structure is provided. The capacitor structure is configured in a substrate. The capacitor structure includes a plurality of electrode sets, at least a first conductive plug and at least a second conductive plug. The electrode sets correspond with each other and are disposed in different layers of the substrate. Each electrode set includes a first electrode and a second electrode surrounding the former. In addition, the first conductive plug and the second conductive plug are disposed between two adjacent electrode sets. First electrodes of two adjacent electrode sets correspond with each other and are electrically connected to each other through the first conductive plug. Similarly, second electrodes of two adjacent electrode sets correspond with each other and are electrically connected to each other through the second conductive plug.

Abstract: A capacitor structure is provided. The capacitor structure is configured in a substrate. The capacitor structure includes a plurality of electrode sets, at least a first conductive plug and at least a second conductive plug. The electrode sets correspond with each other and are disposed in different layers of the substrate. Each electrode set comprises a first electrode and a second electrode surrounding the former. In addition, the first conductive plug and the second conductive plug are disposed between two adjacent electrode sets. First electrodes of two adjacent electrode sets correspond with each other and are electrically connected to each other through the first conductive plug. Similarly, second electrodes of two adjacent electrode sets correspond with each other and are electrically connected to each other through the second conductive plug.

Abstract: A bandgap reference circuit. In the bandgap reference circuit, a current generator includes a first bipolar junction transistor (BJT) and generates a first positive temperature coefficient current thereby producing a negative temperature coefficient voltage between a base terminal and an emitter terminal of the first bipolar junction transistor. A single-end gain amplifier includes a positive input terminal coupled to the emitter terminal of first the bipolar junction transistor. A first resistor is coupled between the output terminal of the single-end gain amplifier and an output terminal of the bandgap reference circuit to generate a first current. A current-to-voltage converter is coupled to the first resistor to convert the first positive temperature coefficient current and the first current to a bandgap voltage.