Abstract: This invention is directed to a semiconductor rectifier chip comprised of a semiconductor dice with at least one P-N junction, and the entire cutting surface of the dice sealed a passivation glass to omite the use of a expansion plate. The rectifier chip is made of negative or positive silicon semiconductor wafer that has been subjected to standard wafer diffusion process to form P30 -N-N+ or N+-P-P+ layer construction, then to cut into a plurality of dices which having a cutting surface, the cutting surface from N30 to P+ of the dice is sealing by the passivation glass to omite the use of the expansion plate, and the electrode ohmic contact metal for soft soldering or hard brazing purpose is made on both sides of the dice simultaneously.