Abstract: A semiconductor package includes a first die having a first substrate, an interconnect structure overlying the first substrate and having multiple metal layers with vias connecting the multiple metal layers, a seal ring structure overlying the first substrate and along a periphery of the first substrate, the seal ring structure having multiple metal layers with vias connecting the multiple metal layers, the seal ring structure having a topmost metal layer, the topmost metal layer being the metal layer of the seal ring structure that is furthest from the first substrate, the topmost metal layer of the seal ring structure having an inner metal structure and an outer metal structure, and a polymer layer over the seal ring structure, the polymer layer having an outermost edge that is over and aligned with a top surface of the outer metal structure of the seal ring structure.

Abstract: A semiconductor structure includes a metal gate structure including a gate dielectric layer and a gate electrode, a conductive layer disposed on the gate electrode, and a gate contact disposed on the conductive layer. The conductive layer extends from a position below a top surface of the metal gate structure to a position above the top surface of the metal gate structure. The gate electrode includes at least a first metal, and the conductive layer includes at least the first metal and a second metal different from the first metal. Laterally the conductive layer is fully between opposing sidewalls of the metal gate structure.

Abstract: A semiconductor structure includes channel structures vertically stacked, a gate structure engaging the channel structures, an epitaxial feature abutting the channel structures, a backside interconnect layer disposed under the epitaxial feature, and a backside metal contact disposed directly under the epitaxial feature and electrically coupling the epitaxial feature to the backside interconnect layer. In a cross-sectional view of the semiconductor structure along a lengthwise direction of the channel structures, the backside metal contact extends to a position directly under the channel structures.

Abstract: A package structure includes a first die, a die stack structure bonded to the first die, a support structure and an insulation structure. The support structure is disposed on the die stack structure, and a sidewall of the support structure is laterally shifted from a sidewall of the die stack structure. The insulation structure is disposed on the first die and laterally wraps around the die stack structure and the support structure.

Abstract: A method, comprising: providing an adjustable distributor assembly disposed within a showerhead configured to provide selectively adjustable openings through which a cleaning material passes; determining an initial value of a configurable parameter of an adjustable distributor assembly; performing an amount/thickness measurement of a layer including polymeric residues and metal oxide deposits at a cleaning surface of a wafer by a monitoring device; determining whether a variation in the amount/thickness measurement is within an acceptable range; and in response to the variation in the amount/thickness measurement that is not within the acceptable range, automatically adjusting the configurable parameter of the adjustable distributor assembly to set the variation in the amount/thickness measurement within the acceptable range so that the cleaning material that passes through the selectively adjustable openings of the adjustable distributor assembly reduces metal oxide deposits.

Abstract: Embodiments of the present specification provide a resource scheduling system and method, where a task processor receives a task processing request submitted for a task to be processed, and creates, based on the task processing request, a resource acquiring request and send same to a scheduler; a resource processing node receives the task processing request, and creates, based on the task processing request, schedulable resource information and sends same to the scheduler; the scheduler executes, according to the resource acquiring request and the schedulable resource information, resource scheduling on the task to be processed, to obtain a resource scheduling result, and sends the resource scheduling result to the resource processing node and the task processor. The resource acquiring request and the schedulable resource information are respectively sent by the task processor and the resource processing node to the scheduler directly.

Abstract: A package includes a first package structure and a second package structure stacked on and electrically connected to the first package structure. The first package structure includes an integrated circuit, conductive structures, and an encapsulant. The integrated circuit includes a first chip, a second chip, a third chip, and a fourth chip. The first chip includes a semiconductor substrate. The second and the third chips are disposed side by side on the first chip. The fourth chip is disposed over the first chip and includes a semiconductor substrate. Sidewalls of the semiconductor substrate of the first chip are aligned with sidewalls of the semiconductor substrate of the fourth chip. The encapsulant laterally encapsulates the integrated circuit and the conductive structures. A topmost surface of the encapsulant is coplanar with top surfaces of the conductive structures. A bottommost surface of the encapsulant is coplanar with bottom surfaces of the conductive structures.

Abstract: A memory device includes a multi-layer stack, a plurality of channel layers and a plurality of ferroelectric layers. The multi-layer stack is disposed on a substrate and includes a plurality of gate layers and a plurality of dielectric layers stacked alternately. The plurality of channel layers penetrate through the multi-layer stack and are laterally spaced apart from each other, wherein the plurality of channel layers include a first channel layer and a second channel layer, and a first electron mobility of the first channel layer is different from a second electron mobility of the second channel layer. Each of the plurality of channel layers are spaced apart from the multi-layer stack by one of the plurality of ferroelectric layers, respectively.

Abstract: An endoscopic surgery platform includes a surgical bed and multiple surgical manipulators. Multiple surgical manipulators are arranged in a matrix on both sides of the surgical bed, and a positioning mechanism is arranged at the bottom of the surgical bed. The surgical manipulator can be stored at the bottom of the surgical bed through the positioning mechanism. The positioning mechanism includes a plurality of surgical manipulators positioned on the bottom of the surgical bed, a plurality of lateral moving pairs for moving along the length direction of the surgical bed, and multiple longitudinal moving pairs connected to the output end of multiple lateral moving pairs respectively and used to move along the width direction of the surgical bed. Longitudinal moving pair, lateral moving pairs and surgical manipulators are connected one by one.

Abstract: The present application provides a method of training a natural language processing model, which relates to a field of artificial intelligence, and in particular to a field of natural language processing. A specific implementation scheme includes: performing a semantic learning for multi-tasks on an input text, so as to obtain a semantic feature for the multi-tasks, wherein the multi-tasks include a plurality of branch tasks; performing a feature learning for each branch task based on the semantic feature, so as to obtain a first output result for each branch task; calculating a loss for each branch task according to the first output result for the branch task; and adjusting a parameter of the natural language processing model according to the loss for each branch task. The present application further provides a method of processing a natural language, an electronic device, and a storage medium.

Abstract: In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.

Abstract: A converter bottom blowing system comprises a first gas source connected in parallel with a lime powder silo, a lime powder blowing tank and a first injector, where a first cut-off valve is arranged between the lime powder blowing tank and the first injector; a second gas source connected in parallel with the biochar powder silo, the biochar powder blowing tank and the second injector, where a second cut-off valve is arranged between the biochar powder blowing tank and the second injector; a converter, where a plurality of bottom blowing lances are arrayed at a bottom of a converter, the bottom blowing lances are connected with the first injector and the second injector through a three-way valve, a third cut-off valve is arranged between the first injector and the three-way valve, and a fourth cut-off valve is arranged between the second injector and the three-way valve.

Abstract: A media streaming device includes a power manager, a stream processor, and a voltage detector. The power manager receives a power signal from the media playback device to supply power to the stream processor. The stream processor provides media stream to the media playback device for playback. The voltage detector is electrically coupled to the stream processor and captures at least a part of the power supply current to the stream processor. The stream processor is configured to determine whether the power supply voltage remains stable. When the supply voltage remains stable, the stream processor operates in a first mode to provide media stream. When the power supply voltage is unstable, the stream processor operates in a second mode to provide media stream, and the power consumption of the stream processor in the second mode is lower than the power consumption in the first mode.

Abstract: A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.

Abstract: A package includes an integrated circuit. The integrated circuit includes a first chip, a dummy chip, a second chip, and a third chip. The first chip includes a semiconductor substrate that extends continuously from an edge of the first chip to another edge of the first chip. The dummy chip is disposed over the first chip and includes a semiconductor substrate that extends continuously from an edge of the dummy chip to another edge of the dummy chip. Sidewalls of the first chip are aligned with sidewalls of the dummy chip. The second chip and the third chip are sandwiched between the first chip and the dummy chip. A thickness of the second chip is substantially equal to a thickness of the third chip.

Abstract: A package includes a carrier substrate, a first die, and a second die. The first die and the second die are stacked on the carrier substrate in sequential order. The first die includes a first bonding layer, a second bonding layer, and an alignment mark embedded in the first bonding layer. The second die includes a third bonding layer. A surface of the first bonding layer form a rear surface of the first die and a surface of the second bonding layer form an active surface of the first die. The rear surface of the first die is in physical contact with the carrier substrate. The active surface of the first die is in physical contact with the third bonding layer of the second die.

Abstract: A chip structure includes first and second semiconductor chips. The first semiconductor chip includes a first semiconductor substrate, a first interconnection layer located on the first semiconductor substrate, a first protection layer covering the first interconnection layer, a gap fill layer located on the first protection layer, and first conductive vias embedded in the gap fill layer and electrically connected with the first interconnection layer.

Abstract: A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die.

Abstract: A display panel and a display device, where the display panel includes a substrate, an insulation layer, a conductive layer, a first planarization layer, an OLED layer and an encapsulation layer which are stacked in sequence, where a plurality of first grooves are formed in the conductive layer, and the first planarization layer fills the first grooves and covers the conductive layer; the display panel further includes a compensation layer, where a plurality of second grooves are formed in the compensation layer, and projection of the compensation layer on the substrate at least overlaps with projection of part of the first grooves on the substrate.

Abstract: A shapable display device includes a first deformable substrate, a first stretchable electrode layer, a stretchable display medium layer, and a second stretchable electrode layer. The first stretchable electrode layer is disposed on the first deformable substrate. The stretchable display medium layer is disposed on the first stretchable electrode layer. The second stretchable electrode layer is disposed on the stretchable display medium layer. The stretchable display medium layer is between the first stretchable electrode layer and the second stretchable electrode layer.