Abstract: A dry process for stripping photoresist from a semiconductor device during the manufacturing process and after high dose ion implantation is describe. The implant-hardened surface of the photoresist is first stripped by oxygen and nitrogen/hydrogen plasma at a lower temperature (<220.degree. C.) to prevent popping problem. The bulk body of the photoresist is then stripped by oxygen and nitrogen/hydrogen plasma at a higher temperature (>220.degree. C.) to provide a faster reaction rate. The semiconductor wafer is cleaned by ammonium hydroxide and hydrogen peroxide to completely remove remaining contaminant and photoresist residuals. The three-step dry process can effectively strip the post implant photoresist so that it ensures the cleanliness of the wafer for the succeeding processes.