Patents by Inventor Chao-Feng Sung
Chao-Feng Sung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130167906Abstract: An organic photovoltaic module is disclosed, including a plurality of devices, wherein neighboring devices are separated by a gap, and each of the devices include a bottom electrode, a first carrier transporting layer, an active layer, a second carrier transporting layer and a top electrode. An insulating layer is disposed on the devices and filled into the gap, wherein the insulating layer includes a first opening exposing the bottom electrode and a second opening exposing the top electrode. A metal trace layer is filled into the first opening and the second opening to connect the devices in series or in parallel.Type: ApplicationFiled: May 22, 2012Publication date: July 4, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Mei-Ju Lee, Chao-Feng Sung
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Publication number: 20130153864Abstract: An ambipolar inverter device suitable for use in an integrated circuit. An electron blocking layer and a hole blocking layer are respectively disposed at two sides of the ambipolar semiconductor layer, so that the operation of the inverter may be executed in a single device. In addition, the manufacturing method of the disclosure is simple, adopting only one patterning step, so as to effectively improve the performance of the ambipolar device.Type: ApplicationFiled: April 24, 2012Publication date: June 20, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chao-Feng Sung, Yen-Min Hsieh
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Publication number: 20130153903Abstract: An ambipolar transistor device structure suitable for use in an integrated circuit is disclosed. An electron blocking layer or a hole blocking layer is interposed between a source/drain and an ambipolar active layer. Therefore, a unipolar device electric property may be extracted from the ambipolar active layer, which may be suitably applied to the design of a logic circuit. The manufacturing method of the disclosure is simple, only needing one patterning step, so as to effectively improve the performance of the ambipolar device.Type: ApplicationFiled: April 20, 2012Publication date: June 20, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chao-Feng Sung, Yen-Min Hsieh
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Patent number: 8216898Abstract: Fabrication methods for electronic devices with via through holes and thin film transistor devices are presented. The fabrication method the electronic device includes providing a substrate, forming a patterned lower electrode on the substrate, and forming a photosensitive insulating layer on the substrate covering the patterned lower electrode. A patterned optical shielding layer is applied on the photosensitive insulating layer. Exposure procedure is performed curing the exposed photosensitive insulating layer. The optical shielding layer and the underlying photosensitive insulating layer are sequentially removed, thereby forming an opening. A patterned upper electrode is formed on the photosensitive insulating layer filling the opening to create a conductive via hole.Type: GrantFiled: February 18, 2009Date of Patent: July 10, 2012Assignee: Industrial Technology Research InstituteInventors: Wen-Chun Chen, Kuo-Tung Lin, Yuh-Zheng Lee, Chao-Feng Sung
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Publication number: 20120170100Abstract: A pixel unit of an electrochromic display panel and a driving method thereof are described. The pixel unit includes a first substrate; a first electrode and a second electrode, on the first substrate; a first auxiliary counter electrode, on the first substrate and disposed between the first electrode and the second electrode; a first electrochromic material, on the first electrode; a second electrochromic material, on the second electrode; a second substrate, opposite to the first substrate; a third electrode, on the second substrate; a third electrochromic material, on the third electrode; and an electrolyte layer, between the first substrate and the second substrate.Type: ApplicationFiled: June 21, 2011Publication date: July 5, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ming-Huan Yang, Chao-Feng Sung
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Patent number: 7743664Abstract: A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.Type: GrantFiled: August 11, 2008Date of Patent: June 29, 2010Assignee: Industrial Technology Research InstituteInventors: Chao-Feng Sung, Chih-Wei Chu, Yuh-Zheng Lee, Chao-Kai Cheng
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Patent number: 7746684Abstract: An operating process of an organic device includes performing a programming process and an erasing process. The programming process includes steps of applying a first positive bias from the first electrode to the second electrode on the organic device so that a conductive state of the organic device is switched to be a first turn-on state when the organic device is in a turn-off state and applying a negative bias from the first electrode to the second electrode on the organic device so that the conductive state of the organic device is switched to be a second turn-on state when the organic device is in the first turn-on state. The erasing process includes a step of applying a second positive bias from the first electrode to the second electrode on the organic device so that the conductive state of the organic device is switched to be the turn-off state.Type: GrantFiled: October 27, 2008Date of Patent: June 29, 2010Assignee: Industrial Technology Research InstituteInventors: Chao-Feng Sung, Je-Ping Hu, Yang Yang
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Publication number: 20100129966Abstract: Fabrication methods for electronic devices with via through holes and thin film transistor devices are presented. The fabrication method the electronic device includes providing a substrate, forming a patterned lower electrode on the substrate, and forming a photosensitive insulating layer on the substrate covering the patterned lower electrode. A patterned optical shielding layer is applied on the photosensitive insulating layer. Exposure procedure is performed curing the exposed photosensitive insulating layer. The optical shielding layer and the underlying photosensitive insulating layer are sequentially removed, thereby forming an opening. A patterned upper electrode is formed on the photosensitive insulating layer filling the opening to create a conductive via hole.Type: ApplicationFiled: February 18, 2009Publication date: May 27, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wen-Chun Chen, Kuo-Tung Lin, Yuh-Zheng Lee, Chao-Feng Sung
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Patent number: 7586118Abstract: A micro device and manufacturing method thereof. The micro device includes a substrate, an insulation layer, and a solution. The insulation layer is disposed on the substrate to define a channel portion and an extension portion communicated with the channel portion. The solution is location in the channel portion. Part of the solution flows to the extension portion by capillary force between the channel portion and the extension portion.Type: GrantFiled: May 26, 2005Date of Patent: September 8, 2009Assignee: Industrial Technology Research InstituteInventors: Kevin Cheng, Chao-Feng Sung, Yuh-Zheng Lee, Je-Ping Hu, Jane Chang, Jinn-Cherng Yang
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Publication number: 20090199648Abstract: A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.Type: ApplicationFiled: August 11, 2008Publication date: August 13, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chao-Feng Sung, Chih-Wei Chu, Yuh-Zheng Lee, Chao-Kai Cheng
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Publication number: 20090053404Abstract: A method for manufacturing an organic tri-stable device on a substrate includes forming a first metal layer on the substrate. A first organic mixture layer is formed over the first metal layer, and a diffusion barrier layer is formed over the first metal layer. A second organic mixture layer is formed on the diffusion barrier layer, and a second metal layer is formed over the second organic mixture layer.Type: ApplicationFiled: October 27, 2008Publication date: February 26, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chao-Feng Sung, Je-Ping Hu, Yang YANG
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Publication number: 20090052228Abstract: An operating process of an organic device includes performing a programming process and an erasing process. The programming process includes steps of applying a first positive bias from the first electrode to the second electrode on the organic device so that a conductive state of the organic device is switched to be a first turn-on state when the organic device is in a turn-off state and applying a negative bias from the first electrode to the second electrode on the organic device so that the conductive state of the organic device is switched to be a second turn-on state when the organic device is in the first turn-on state. The erasing process includes a step of applying a second positive bias from the first electrode to the second electrode on the organic device so that the conductive state of the organic device is switched to be the turn-off state.Type: ApplicationFiled: October 27, 2008Publication date: February 26, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chao-Feng Sung, Je-Ping Hu, Yang YANG
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Publication number: 20090015147Abstract: A display element with partition structures in display areas and a fabrication method thereof. The partition structure is formed on a display area of a display substrate by a solution process using the coffee ring effect. A display area of the display element is defined using the coffee ring ridge of the coffee ring as a partition structure. A covering material is inkjet printed or dispensed in the display area.Type: ApplicationFiled: May 2, 2008Publication date: January 15, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Fu-Kang Chen, Jhih-Ping Lu, Chao-Feng Sung, Yuh-Zheng Lee, Chao-Kai Cheng
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Publication number: 20070154691Abstract: An organic tri-stable device. The organic tri-stable device comprises a first electrode, a second electrode, a diffusion barrier layer, a first organic mixture layer and a second organic mixture layer. The diffusion barrier layer is located between the first electrode and the second electrode. The first organic mixture layer is located between the first electrode and the diffusion barrier layer. The second organic mixture layer is located between the second electrode and the diffusion barrier layer.Type: ApplicationFiled: June 22, 2006Publication date: July 5, 2007Inventors: Chao-Feng Sung, Je-Ping Hu, Yang YANG
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Publication number: 20070069201Abstract: An organic bistable device includes a first electrode, a second electrode, and an organic mixture layer, wherein the organic mixture layer is located between the first electrode and the second electrode. While a bias is applied between the first electrode and the second electrode of the bistable device, the doped metal material/particle is used as a mediator for injecting electrons. Therefore, both the writing/erasing cycle times and life time of an organic bistable device are increased. Moreover, the organic bistable device having an organic mixture layer with metal dopants possesses a relatively stable low conductance (off-current) state. Hence, by applying the voltage thereon, the organic bistable device can be well controlled to be turned on or turned off.Type: ApplicationFiled: January 3, 2006Publication date: March 29, 2007Inventors: Chao-Feng Sung, Je-Ping Hu
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Publication number: 20060118796Abstract: A micro device and manufacturing method thereof. The micro device includes a substrate, an insulation layer, and a solution. The insulation layer is disposed on the substrate to define a channel portion and an extension portion communicated with the channel portion. The solution is location in the channel portion. Part of the solution flows to the extension portion by capillary force between the channel portion and the extension portion.Type: ApplicationFiled: May 26, 2005Publication date: June 8, 2006Inventors: Kevin Cheng, Chao-Feng Sung, Yuh-Zheng Lee, Je-Ping Hu, Jane Chang, Jinn-Cherng Yang