Abstract: A magnetic multi-pole propulsion array system is applied to at least one external cathode and includes a plurality of magnetic multi-pole thrusters connected adjacent to each other. Each magnetic multi-pole thruster includes a propellant provider, a discharge chamber, an anode and a plurality of magnetic components. The propellant provider outputs propellant. The discharge chamber is connected with the propellant provider to accommodate the propellant. The anode is disposed inside the discharge chamber to generate an electric field. The plurality of magnetic components is respectively disposed on several sides of the discharge chamber. One of the several sides of the discharge chamber of the magnetic multi-pole thruster is applied for one side of a discharge chamber of another magnetic multi-pole thruster.

Abstract: A three-dimensional printing apparatus includes a liquid tank capable of accommodating a photosensitive liquid. The liquid tank includes a film, a plurality of side walls, a plate and a motor. The film has a workpiece curing area. The plurality of side walls surrounds the film. The plate is capable of supporting the film and having at least one fluid tunnel extending from a first surface of the plate contacting the film to a second surface of the plate. The motor is connected to the liquid tank to incline the liquid tank. A gap is formed between the plat and one of the plurality of side walls of the liquid tank, and the film is communicated with an outside space via the gap.

Abstract: CD93 functional domains for use in treating osteoporosis. A method of alleviating, reducing, suppressing, and/or treating an osteoclast-related bone disease is disclosed. The method comprises administering a therapeutically effective amount of an isolated recombinant protein comprising an amino acid sequence that is at least 80% identical to human Cluster of Differentiation 93 protein domain 1 to a subject in need thereof, the recombinant protein lacking amino acid residues 1 to 21, transmembrane and cytoplasmic domains of the human CD93 (SEQ ID NO: 3) and having a total length of no more than 559 amino acid residues. In one embodiment, the osteoclast-related bone disease is at least one selected from the group consisting of osteoporosis, postmenopausal osteoporosis, osteopenia, bone loss, inflammatory bone loss, and any combination thereof. In another embodiment, the recombinant protein comprises the amino acid sequence of SEQ ID NO: 1 or SEQ ID NO: 2.

Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: determining whether to use a first programming mode or a second programming mode to program memory cells according to a first data amount and a second data amount; when the first data amount is greater than the second data amount, programming the memory cells by using the first programming mode; and when the first data amount is not greater than the second data amount, programming the memory cells by using the second programming mode.

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: determining whether to use a first programming mode or a second programming mode to program memory cells according to a first data amount and a second data amount; when the first data amount is greater than the second data amount, programming the memory cells by using the first programming mode; and when the first data amount is not greater than the second data amount, programming the memory cells by using the second programming mode.

Abstract: An allocation structure is used for a flash memory device. The flash memory device includes a first memory module and a second memory module. The first memory module and the second memory module respectively have a plurality of groups, and each of the groups of the first memory module has a plurality of physical blocks of the first memory module and each of the groups of the second memory module has a plurality of physical blocks of the second memory module. The allocation structure includes a first zone. The first zone is used to store a first allocation unit, and is formed by a first group of the groups of the first memory module and a first part of a second group of the groups of the second memory module.

Abstract: A control method and an allocation structure for a flash memory device are provided herein. The flash memory device has a first memory module and a second memory module. Physical blocks of the first memory module and physical blocks of the second memory module are respectively divided into a plurality of groups, each of which has a plurality of the physical blocks. A first subunit and a second subunit of a first allocation unit are interleavingly written into a first group of the groups of the first memory module and a second group of the groups of the second memory chip respectively. Additionally, a first subunit and a second subunit of a second allocation unit are interleavingly written into a third group of the groups of the first memory module and the second group, respectively.

Abstract: A data storing method and a memory controller and a memory storage apparatus using the same are provided. The method includes logically grouping physical erase units into a data area and a spare area; selecting a physical erase unit form the spare area as a first data collecting unit; and selecting a physical erase unit from the spare area as a second data collecting unit. The method also includes writing data received from a host into the first data collecting unit. The method further includes performing a data arranging operation to move valid data in a third physical erase unit to the second data collecting unit and associating the third physical erase unit with the spare area. Accordingly, the method can effectively enhance the performance of the write operation.

Abstract: A control method and an allocation structure for a flash memory device are provided herein. The flash memory device has a first memory module and a second memory module. Physical blocks of the first memory module and physical blocks of the second memory module are respectively divided into a plurality of groups, each of which has a plurality of the physical blocks. A first subunit and a second subunit of a first allocation unit are interleavingly written into a first group of the groups of the first memory module and a second group of the groups of the second memory chip respectively. Additionally, a first subunit and a second subunit of a second allocation unit are interleavingly written into a third group of the groups of the first memory module and the second group, respectively.