Patents by Inventor Chao-Hsian Peng

Chao-Hsian Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140235050
    Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate and depositing a conductive layer on the substrate. A patterned hard mask and a catalyst layer are formed on the conductive layer. The method further includes growing a plurality of carbon nanotubes (CNTs) from the catalyst layer and etching the conductive layer by using the CNTs and the patterned hard mask as an etching mask to form metal features.
    Type: Application
    Filed: April 30, 2014
    Publication date: August 21, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Fu Yeh, Hsiang-Huan Lee, Chao-Hsian Peng, Hsien-Chang Wu