Patents by Inventor Chao-Hsiang Fu

Chao-Hsiang Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming opening having tapered sides in a plasma nitride layer
    Patent number: 4342617
    Abstract: A process is described for forming a plasma nitride (SiNy) layer and a tapered opening through the layer so that the opening may more readily receive ohmic contacts. During the formation of the plasma nitride layer, more silane (over ammonia) is used to form a silicon rich upper portion of the layer. During the subsequent etching of this layer to form the opening, the silicon rich portion of the plasma nitride layer etches more quickly than the remainder of the layer and this results in the formation of the tapered opening through the layer.
    Type: Grant
    Filed: February 23, 1981
    Date of Patent: August 3, 1982
    Assignee: Intel Corporation
    Inventors: Chao-Hsiang Fu, Sheau-Ming S. Liu