Patents by Inventor Chao-Hsin (Michael) Yu

Chao-Hsin (Michael) Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250151353
    Abstract: A method of forming a semiconductor device includes the following steps. A 2D material layer is formed over a bottom metal layer. A top metal layer is formed over the 2D material layer. An oxidation treatment is performed to the 2D material layer to form an oxide region interfacing both the 2D material layer and the top metal layer.
    Type: Application
    Filed: November 3, 2023
    Publication date: May 8, 2025
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chao-Hsin Wu, Yu Ting Chao, Yu-Hsuan Lu, Ying-Chuan Chen
  • Publication number: 20250000457
    Abstract: The enclosed describes a sensor pad for wearing on a human body. The sensor pad is configured to be in contact with a substrate having a contoured surface, such as a surface of the body. The sensor pad comprises at least a sensor layer and a stiffener layer. The sensor layer comprises a surface area defining a sensing area configured to measure value at a plurality of locations of the sensing area. The stiffener layer is couples to the surface area of the sensor layer. The stiffener layer has a micro-cut pattern to reduce mechanical resistance of the stiffener layer. The micro-cut pattern facilitates the stiffener layer in stretching or compressing in one or more predefined directions, enabling the stiffener lay to conform to the contoured surface of the substrate.
    Type: Application
    Filed: September 13, 2024
    Publication date: January 2, 2025
    Inventors: Jeffrey Chao-Hsin Li, John Alexander Hogg, Adele Syt Fu Chui
  • Publication number: 20240422998
    Abstract: A device includes a carbon nanotube having a channel region and dopant-free source/drain regions at opposite sides of the channel region, a first metal oxide layer interfacing a first one of the dopant-free source/drain regions of the carbon nanotube, a second metal oxide layer interfacing a second one of the dopant-free source/drain regions of the carbon nanotube and a gate structure over the channel region of the carbon nanotube, and laterally between the first metal oxide layer and the second metal oxide layer.
    Type: Application
    Filed: June 16, 2023
    Publication date: December 19, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNVERSITY
    Inventors: Hsin-Yuan CHIU, Tzu-Ang CHAO, Gregory Michael PITNER, Matthias PASSLACK, Chao-Hsin CHIEN, Han WANG
  • Publication number: 20240405131
    Abstract: A guard ring structure and a component structure are provided. The guard ring structure includes a first attached guard ring and a second attached guard ring. The first attached guard ring is disposed at a periphery of an active region. The second attached guard ring is disposed at a periphery of the first attached guard ring. The first attached guard ring and the second attached guard ring are each an attached guard ring, and form a stepped structure. The guard ring structure is a stepped diffusion structure for an avalanche photodiode.
    Type: Application
    Filed: August 7, 2023
    Publication date: December 5, 2024
    Inventors: CHAO-HSIN WU, CHI-EN CHEN, Natchanon Prechatavanich
  • Publication number: 20240372034
    Abstract: A light emitting device including an active layer, a first semiconductor layer, a first contact layer, and a first current limiting layer is provided. The first semiconductor layer is disposed at a first side of the active layer. The first contact layer is disposed at a side of the first semiconductor layer away from the active layer. The first current limiting layer is disposed between the first contact layer and the active layer, and is provided with a first non-oxidizing region and a first oxidizing region located around the first non-oxidizing region. The first current limiting layer has a first surface facing the active layer and a second surface away from the first surface. The first oxidizing region is extended from the first surface to the second surface, and an oxygen content of the first oxidizing region is greater than an oxygen content of the first non-oxidizing region.
    Type: Application
    Filed: September 14, 2023
    Publication date: November 7, 2024
    Applicant: AUO Corporation
    Inventors: Chao-Hsin Wu, Chee Keong Yee, Jia Ming Lin, Chia-An Lee, Kuan-Heng Lin
  • Publication number: 20240363343
    Abstract: A method includes following steps. A single-crystalline two-dimensional (2D) semiconductor layer is formed over a substrate. A single-crystalline 2D material layer is epitaxially grown on the single-crystalline 2D semiconductor layer. The single-crystalline 2D material layer is lattice-matched with the single-crystalline 2D semiconductor layer. A semiconductor device is over the single-crystalline 2D semiconductor layer.
    Type: Application
    Filed: April 27, 2023
    Publication date: October 31, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., National Yang Ming Chiao Tung University
    Inventors: Shu-Jui CHANG, Shin-Yuan WANG, Yu-Che HUANG, Chao-Hsin CHIEN, Chenming HU
  • Publication number: 20240347340
    Abstract: An epitaxial structure includes a substrate and a dielectric layer. The dielectric layer is on the substrate. The substrate comprises a single crystal metal or a single crystal 2D material. The dielectric layer is in physical contact with the substrate. The dielectric layer comprises a non-perovskite structure with defined grain orientation with ferroelectric (FE) phase or antiferroelectric (AFE) phase.
    Type: Application
    Filed: April 12, 2023
    Publication date: October 17, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Shu-Jui CHANG, Shin-Yuan WANG, Yu-Che HUANG, Chao-Hsin CHIEN, Chenming HU
  • Patent number: 12104951
    Abstract: The invention provides a photocoupler sensing circuit and an operation method thereof. The photocoupler sensing circuit includes a processing circuit and a sensing circuit. The processing circuit has a first input terminal and a second input terminal. The processing circuit outputs a first signal according to a connection status of the first input terminal and the second input terminal being short or open. The sensing circuit is coupled to the processing circuit and receives the first signal. The sensing circuit determines to output a sensing signal to a system terminal according to the first signal, so that the system terminal determines whether the connection status of the first input terminal and the second input terminal is short or open according to the sensing signal. The sensing circuit includes a single-diode photocoupler coupled to the system terminal.
    Type: Grant
    Filed: April 21, 2023
    Date of Patent: October 1, 2024
    Assignee: Wistron Corporation
    Inventors: Chao-Hsin Chang, Meng-Jeong Pan
  • Patent number: 12089952
    Abstract: The enclosed describes a sensor pad for wearing on a human body. The sensor pad is configured to be in contact with a substrate having a contoured surface, such as a surface of the body. The sensor pad comprises at least a sensor layer and a stiffener layer. The sensor layer comprises a surface area defining a sensing area configured to measure value at a plurality of locations of the sensing area. The stiffener layer is couples to the surface area of the sensor layer. The stiffener layer has a micro-cut pattern to reduce mechanical resistance of the stiffener layer. The micro-cut pattern facilitates the stiffener layer in stretching or compressing in one or more predefined directions, enabling the stiffener lay to conform to the contoured surface of the substrate.
    Type: Grant
    Filed: July 28, 2021
    Date of Patent: September 17, 2024
    Assignee: Xsensor Technology Corporation
    Inventors: Jeffrey Chao-Hsin Li, John Alexander Hogg, Adele Syt Fu Chui
  • Publication number: 20240255347
    Abstract: The invention provides a photocoupler sensing circuit and an operation method thereof. The photocoupler sensing circuit includes a processing circuit and a sensing circuit. The processing circuit has a first input terminal and a second input terminal. The processing circuit outputs a first signal according to a connection status of the first input terminal and the second input terminal being short or open. The sensing circuit is coupled to the processing circuit and receives the first signal. The sensing circuit determines to output a sensing signal to a system terminal according to the first signal, so that the system terminal determines whether the connection status of the first input terminal and the second input terminal is short or open according to the sensing signal. The sensing circuit includes a single-diode photocoupler coupled to the system terminal.
    Type: Application
    Filed: April 21, 2023
    Publication date: August 1, 2024
    Applicant: Wistron Corporation
    Inventors: Chao-Hsin Chang, Meng-Jeong Pan
  • Patent number: 12043333
    Abstract: A seat for a pedal-powered vehicle is described. The seat includes a support frame, a seat element and a nose. The seat element and the nose are implemented as separated components and are supported by the support frame. The seat element is configured to support at least part of a rider's weight. The seat element carries a pressure-relieving region that is configured to be located at a location corresponding to an ischial tuberosity (IT) of the rider, thereby relieving pressure exerted on the rider's IT's.
    Type: Grant
    Filed: August 18, 2023
    Date of Patent: July 23, 2024
    Assignee: Xsensor Technology Corporation
    Inventors: Ian Main, Christine J. Gonis, Jeffrey Chao-Hsin Li
  • Patent number: 12027628
    Abstract: In an embodiment, a method includes forming a first gate electrode over a substrate. The method also includes forming a first gate dielectric layer over the first gate electrode. The method also includes depositing a semiconductor layer over the first gate dielectric layer. The method also includes forming source/drain regions over the first gate dielectric layer and the semiconductor layer, the source/drain regions overlapping ends of the semiconductor layer. The method also includes forming a second gate dielectric layer over the semiconductor layer and the source/drain regions. The method also includes and forming a second gate electrode over the second gate dielectric layer.
    Type: Grant
    Filed: April 20, 2023
    Date of Patent: July 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Yan Chung, Chao-Ching Cheng, Chao-Hsin Chien
  • Publication number: 20240140651
    Abstract: A flexible container has a bag body and a sealing portion at the upper end of the bag body's sidewalls. The sealing portion includes a strip and a groove which are relatively arranged on the inner side of the sealing portion. The strip has a convex mushroom-shaped cross-section, and the groove has a concave mushroom-shaped cross-section. The strip and groove interlock by an interference snap fit connection. The ends of the strip and groove transition from the mushroom-shaped cross-section to a rectangular-shaped cross-section which also snap fit together. The mushroom-shaped cross-section in the middle portion of the strip and groove create a sealing portion that is easy to seal and difficult to open. To help open the sealing portion, tabs extend up from the bag body's sidewalls. There is a cross-sectional transition design near the end, and the transitional shape can increase the sealing force to optimize the anti-leak effect.
    Type: Application
    Filed: October 19, 2023
    Publication date: May 2, 2024
    Applicant: Greater Goods, LLC
    Inventors: Daniel Joseph Mirth, Chao Hsin Liu, Jeremy Jason Dexter
  • Patent number: 11897616
    Abstract: A galley cart system employs a dry ice compartment and a refrigeration compartment in a galley cart in flow communication with the dry ice compartment. A ventilation system is in interruptible flow communication with at least the refrigeration compartment and configured to receive gas discharged from at least the refrigeration compartment.
    Type: Grant
    Filed: August 25, 2022
    Date of Patent: February 13, 2024
    Inventors: Bryce A. Vandyke, Marcus K. Richardson, Chao-Hsin Lin
  • Publication number: 20230391412
    Abstract: A seat for a pedal-powered vehicle is described. The seat includes a support frame, a seat element and a nose. The seat element and the nose are implemented as separated components and are supported by the support frame. The seat element is configured to support at least part of a rider's weight. The seat element carries a pressure-relieving region that is configured to be located at a location corresponding to an ischial tuberosity (IT) of the rider, thereby relieving pressure exerted on the rider's IT's.
    Type: Application
    Filed: August 18, 2023
    Publication date: December 7, 2023
    Inventors: Ian Main, Christine J. Gonis, Jeffrey Chao-Hsin Li
  • Publication number: 20230373044
    Abstract: A cutter and cutter-holder matching device is provided. The cutter and cutter-holder matching device includes a cutter-holder storage module, a cutter storage module, a temporary cutter-holder placement module, a cutter-holder heating module, an assembly storage module, and a first and a second clamping module. The cutter-holder storage module is configured for carrying a plurality of cutter holders. The cutter storage module is configured for carrying a plurality of cutters. The temporary cutter-holder placement module includes a temporary cutter-holder placement structure configured for carrying the cutter holder. The cutter-holder heating module is configured for heating the cutter holder that is carried by the temporary cutter-holder placement structure. The assembly storage module includes a plurality of assembly placement structures.
    Type: Application
    Filed: August 3, 2023
    Publication date: November 23, 2023
    Inventor: CHAO-HSIN LIN
  • Publication number: 20230327007
    Abstract: A method includes forming a 2-D material layer over a substrate, wherein the 2-D material layer comprises transition metal atoms and chalcogen atoms; forming a gate structure over the 2-D material layer; supplying chemical molecules to the 2-D material layer, such that atoms of the chemical molecules react with portions of the chalcogen atoms to weaken covalent bonds between the portions of the chalcogen atoms and the transition metal atoms; and forming source/drain contacts over the 2-D material layer, wherein contact metal atoms of the source/drain contacts form metallic bonds with the transition metal atoms of the 2-D material layer.
    Type: Application
    Filed: June 13, 2023
    Publication date: October 12, 2023
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., National Yang Ming Chiao Tung University
    Inventors: Shu-Jui CHANG, Shin-Yuan WANG, Yu-Che HUANG, Chun-Liang LIN, Chao-Hsin CHIEN, Chenming HU
  • Patent number: 11760431
    Abstract: A seat for a pedal-powered vehicle is described. The seat includes a support frame, a seat element and a nose. The seat element and the nose are implemented as separated components and are supported by the support frame. The seat element is configured to support at least part of a rider's weight. The seat element carries a pressure-relieving region that is configured to be located at a location corresponding to an ischial tuberosity (IT) of the rider, thereby relieving pressure exerted on the rider's IT's.
    Type: Grant
    Filed: September 25, 2021
    Date of Patent: September 19, 2023
    Assignee: XSENSOR Technology Corporation
    Inventors: Ian Main, Christine J. Gonis, Jeffrey Chao-Hsin Li
  • Patent number: 11749965
    Abstract: A transistor for emitting laser with a fixed frequency includes a first region, a second region, at least one quantum well, and a third region. The at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region. When one of the first region, the second region, and the third region receives two signals, or two of the first region, the second region, and the third region receive the two signals respectively, the at least one quantum well emits the laser with the fixed frequency.
    Type: Grant
    Filed: July 14, 2020
    Date of Patent: September 5, 2023
    Assignee: National Taiwan University
    Inventors: Chao-Hsin Wu, Chien-Ting Tung, Shu-Wei Chang
  • Patent number: D1045615
    Type: Grant
    Filed: April 25, 2023
    Date of Patent: October 8, 2024
    Assignee: Greater Goods, LLC
    Inventors: Jeremy Jason Dexter, Daniel Joseph Mirth, Chao Hsin Liu