Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A transistor for emitting laser with a fixed frequency includes a first region, a second region, at least one quantum well, and a third region. The at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region. When one of the first region, the second region, and the third region receives two signals, or two of the first region, the second region, and the third region receive the two signals respectively, the at least one quantum well emits the laser with the fixed frequency.

Abstract: A vertical-cavity surface emitting laser includes a substrate, a first reflector, an active region, an oxide layer, a second reflector, and a circular metal electrode. The first reflector is formed above the substrate. The active region is formed above the first reflector, and includes at least one quantum well. The at least one quantum well generates a laser beam with a plurality of modes. The oxide layer is formed above the active region and includes an oxide aperture. The second reflector is formed above the oxide layer. The circular metal electrode is formed in a circular concave in the second reflector. The circular metal electrode reflects other modes of the laser beam with the plurality of modes except for a fundamental mode and receive an operational voltage. A window exists between the circular concave and lets the laser beam with the fundamental mode pass.

Abstract: A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a channel layer and an active layer over a substrate; forming a doped epitaxial layer over the active layer; patterning the doped epitaxial layer, the active layer, and the channel layer to form a fin structure comprising a doped epitaxial fin portion, an active fin portion below the doped epitaxial fin portion, and a channel fin portion below the active fin portion; removing the doped epitaxial fin portion; and forming a gate electrode at least partially extending along a sidewall of the fin structure to form a Schottky barrier between the gate electrode and the fin structure after removing the doped epitaxial fin portion.

Abstract: A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.

Abstract: A transistor for emitting laser with a fixed frequency includes a first region, a second region, at least one quantum well, and a third region. The at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region. When one of the first region, the second region, and the third region receives two signals, or two of the first region, the second region, and the third region receive the two signals respectively, the at least one quantum well emits the laser with the fixed frequency.

Abstract: A vertical-cavity surface emitting laser includes a substrate, a first reflector, an active region, an oxide layer, a second reflector, and a circular metal electrode. The first reflector is formed above the substrate. The active region is formed above the first reflector, and includes at least one quantum well. The at least one quantum well generates a laser beam with a plurality of modes. The oxide layer is formed above the active region and includes an oxide aperture. The second reflector is formed above the oxide layer. The circular metal electrode is formed in a circular concave in the second reflector. The circular metal electrode reflects other modes of the laser beam with the plurality of modes except for a fundamental mode and receive an operational voltage. A window exists between the circular concave and lets the laser beam with the fundamental mode pass.

Abstract: A manufacturing method of a device for generating terahertz radiation includes forming a distributed feedback laser epitaxy module; etching the distribution feedback laser epitaxy module corresponding to a first window to a predetermined depth; forming an indium gallium arsenide epitaxy layer above the distributed feedback laser epitaxy module corresponding to the first window; etching out the indium gallium arsenide epitaxy layer corresponding to a second window to expose the distributed feedback epitaxy module corresponding to the second window; forming a first electrode, a grating, and an antenna above an upper surface of the distributed feedback laser epitaxy module, an upper surface of the indium gallium arsenide epitaxy layer, and the distributed feedback laser epitaxy module corresponding to the second window, respectively; forming a second electrode above a lower surface of the distributed feedback laser epitaxy module; and forming two metal wires between the grating and the antenna.

Abstract: A device includes a phosphide-containing structure, a dopant source layer and a conductive contact. The phosphide-containing structure has a first chemical element in a compound with phosphorus. The dopant source layer is over the phosphide-containing structure and has a second chemical element the same as the first chemical element. The conductive contact is over the dopant source layer.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a channel layer and an active layer over a substrate; forming a doped epitaxial layer over the active layer; patterning the doped epitaxial layer, the active layer, and the channel layer to form a fin structure comprising a doped epitaxial fin portion, an active fin portion below the doped epitaxial fin portion, and a channel fin portion below the active fin portion; removing the doped epitaxial fin portion; and forming a gate electrode at least partially extending along a sidewall of the fin structure to form a Schottky barrier between the gate electrode and the fin structure after removing the doped epitaxial fin portion.

Abstract: A device includes a phosphide-containing structure, a dopant source layer and a conductive contact. The phosphide-containing structure has a first chemical element in a compound with phosphorus. The dopant source layer is over the phosphide-containing structure and has a second chemical element the same as the first chemical element. The conductive contact is over the dopant source layer.

Abstract: A semiconductor device includes a substrate, a channel layer, an active layer, and a gate electrode. The channel layer has a fin portion over the substrate. The active layer is over at least the fin portion of the channel layer. The active layer is configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer. The gate electrode is in contact with a sidewall of the fin portion of the channel layer.

Abstract: A method includes providing a black phosphorus (BP) layer over a substrate, forming a dopant source layer over the BP layer, annealing the dopant source layer to drive a dopant from the dopant source layer into the BP layer, and forming a conductive contact over the dopant source layer.

Abstract: A semiconductor device includes a substrate, a channel layer, an active layer, and a gate electrode. The channel layer has a fin portion over the substrate. The active layer is over at least the fin portion of the channel layer. The active layer is configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer. The gate electrode is in contact with a sidewall of the fin portion of the channel layer.

Abstract: A method includes providing a black phosphorus (BP) layer over a substrate, forming a dopant source layer over the BP layer, annealing the dopant source layer to drive a dopant from the dopant source layer into the BP layer, and forming a conductive contact over the dopant source layer.

Abstract: A method for analyzing a digital audio signal associated with a baby cry, comprising the steps of: (a) processing the digital audio signal using a spectral analysis to generate a spectral data; (b) processing the digital audio signal using a time-frequency analysis to generate a time-frequency characteristic; (c) categorizing the baby cry into one of a basic type and a special type based on the spectral data; (d) if the baby cry is of the basic type, determining a basic need based on the time-frequency characteristic and a predetermined lookup table; and (e) if the baby cry is of the special type, determining a special need by inputting the time-frequency characteristic into a pre-trained artificial neural network.

Abstract: A method for amplifying an input optical signal includes the following steps: providing a light-emitting transistor device having a base region between collector and emitter regions; applying electrical signals with respect to the base, collector, and emitter regions to produce light emission from the base region of the light-emitting transistor device; and applying the input optical signal to the base region of the light-emitting transistor device to produce an amplified optical output from the base region.

Abstract: An electronic vision-therapy apparatus includes a frame, a lens module and a control unit. The lens module includes first and second liquid crystal lenses. The control unit is for controlling the first and second liquid crystal lenses to cooperatively generate and display a light filtering pattern. The light filtering pattern has an opaque part and a plurality of transparent parts. The control unit configures a part of the first liquid crystal lens that corresponds to the opaque part to allow only light having a first polarization to pass therethrough, and configures a part of the second liquid crystal lens that corresponds to the opaque part to allow only light having a second polarization orthogonal to the first polarization to pass therethrough.