Patents by Inventor Chao-Hsing Chen

Chao-Hsing Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250143026
    Abstract: A semiconductor light-emitting device includes: a semiconductor stack, including; an active layer, formed on the semiconductor stack; a second semiconductor contact layer formed on the active layer; and a recessed region formed in the semiconductor stack and including a part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on semiconductor stack, including a first and second opening; a first electrode pad in the first opening and connected with the first semiconductor contact layer; and a second electrode pad in the second opening and connected to the transparent electrode. The semiconductor light-emitting device receives an operating current having ratio to the area of the transparent electrode that ranges from 10 mA/mm2 to 1000 mA/mm2. In a top view, the active layer surrounds the recessed region. The semiconductor stack and the transparent electrode layer each includes an edge adjacent to the recessed region.
    Type: Application
    Filed: January 3, 2025
    Publication date: May 1, 2025
    Inventors: Hsin-Ying WANG, Chao-Hsing CHEN, Chi-Ling LEE, Chen OU, Min-Hsun HSIEH
  • Patent number: 12283606
    Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first
    Type: Grant
    Filed: February 15, 2024
    Date of Patent: April 22, 2025
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, I-Lun Ma, Bo-Jiun Hu, Yu-Ling Lin, Chien-Chih Liao
  • Publication number: 20250126936
    Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes an upper surface; a plurality of exposed regions, formed in the semiconductor stack and exposing the upper surface; a lower protective layer, covering the exposed regions and the second semiconductor layer; a first reflective structure, formed on the second semiconductor layer and including a plurality of first openings on the second semiconductor layer; a second reflective structure, formed on the first reflective structure and electrically connected to the second semiconductor layer through the plurality of first openings; and an upper protective layer, formed on the second reflective structure; wherein the upper protective layer contacts and overlaps the lower protective layer on the exposed regions; wherein the first reflective structure and the
    Type: Application
    Filed: December 17, 2024
    Publication date: April 17, 2025
    Inventors: Jhih-Yong YANG, Hsin-Ying WANG, De-Shan KUO, Chao-Hsing CHEN, Yi-Hung LIN, Meng-Hsiang HONG, Kuo-Ching HUNG, Cheng-Lin LU
  • Patent number: 12230740
    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.
    Type: Grant
    Filed: April 22, 2021
    Date of Patent: February 18, 2025
    Assignee: EPISTAR CORPORATION
    Inventors: Jhih-Yong Yang, Hsin-Ying Wang, De-Shan Kuo, Chao-Hsing Chen, Yi-Hung Lin, Meng-Hsiang Hong, Kuo-Ching Hung, Cheng-Lin Lu
  • Patent number: 12230744
    Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,
    Type: Grant
    Filed: September 20, 2023
    Date of Patent: February 18, 2025
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Cheng-Lin Lu, Chih-Hao Chen, Chi-Shiang Hsu, I-Lun Ma, Meng-Hsiang Hong, Hsin-Ying Wang, Kuo-Ching Hung, Yi-Hung Lin
  • Patent number: 12218279
    Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a
    Type: Grant
    Filed: January 11, 2024
    Date of Patent: February 4, 2025
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Jia-Kuen Wang, Chien-Chih Liao, Tzu-Yao Tseng, Tsun-Kai Ko, Chien-Fu Shen
  • Patent number: 12218282
    Abstract: A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.
    Type: Grant
    Filed: December 29, 2022
    Date of Patent: February 4, 2025
    Assignee: EPISTAR CORPORATION
    Inventors: Aurelien Gauthier-Brun, Chao-Hsing Chen, Chang-Tai Hsaio, Chih-Hao Chen, Chi-Shiang Hsu, Jia-Kuen Wang, Yung-Hsiang Lin
  • Patent number: 12176465
    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.
    Type: Grant
    Filed: April 20, 2023
    Date of Patent: December 24, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Bo-Jiun Hu, Tsung-Hsun Chiang, Wen-Hung Chuang, Kuan-Yi Lee, Yu-Ling Lin, Chien-Fu Shen, Tsun-Kai Ko
  • Publication number: 20240421249
    Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface; a contact electrode covering the second semiconductor layer and comprising a first side surface; an insulating reflective structure covering the contact electrode and comprising a plurality of insulating reflective structure openings; a connection layer covering the insulating reflective structure and filling into the plurality of insulating reflective structure openings, and comprising a second side surface; and a metal reflective layer covering the connection layer and filling into the plurality of insulating reflective structure openings, and comprising a third side surface; wherein in a cross-sectional view of the light-emitting device, a first pitch is between the first side surface and the inclined surface, a third pitch is between the third side surface and the inclined surface, and the third pitch is smaller than the first
    Type: Application
    Filed: June 12, 2024
    Publication date: December 19, 2024
    Inventors: Meng-Hsiang HONG, Yu-Ling LIN, Chao-Hsing CHEN, Chen OU, Chien-Ya HUNG
  • Publication number: 20240421262
    Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface connected to the first semiconductor layer; a contact electrode covering the second semiconductor layer and comprising an upper surface; a reflective structure comprising a reflective structure opening having a first side surface and a second side surface; a connection layer covering the reflective structure; and a metal reflective layer covering the connection layer; wherein in a cross-sectional view of the light-emitting device, a first portion of a projection of the first side surface to the upper surface of the contact electrode comprises a first length, a second portion of a projection of the second side surface to the upper surface of the contact electrode comprises a second length, and the first length is smaller than the second length.
    Type: Application
    Filed: June 14, 2024
    Publication date: December 19, 2024
    Inventors: Yen-Liang KUO, Chao-Hsing CHEN, Chi-Shiang HSU, Chung-Hao WANG
  • Patent number: 12166156
    Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.
    Type: Grant
    Filed: December 29, 2023
    Date of Patent: December 10, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Tsung-Hsun Chiang, Bo-Jiun Hu, Wen-Hung Chuang, Yu-Ling Lin
  • Publication number: 20240395975
    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 28, 2024
    Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Wen-Hung CHUANG, Tzu-Yao TSENG, Cheng-Lin LU
  • Patent number: 12155019
    Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.
    Type: Grant
    Filed: August 3, 2023
    Date of Patent: November 26, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Ying Wang, Chih-Hao Chen, Chien-Chih Liao, Chao-Hsing Chen, Wu-Tsung Lo, Tsun-Kai Ko, Chen Ou
  • Publication number: 20240372053
    Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer and a plurality of mesas spaced apart from each other on the first semiconductor layer, wherein the plurality of mesas each includes a second semiconductor layer, the first semiconductor layer and the second semiconductor layer have different conductivity types; a contact metal formed on the semiconductor stack, including a plurality of first contact parts located between the mesas and electrically connected to the first semiconductor layer, and a plurality of second contact parts located on the mesas and electrically connected to the second semiconductor layer; a first insulating structure formed on the contact metal, including a plurality of first openings corresponding to the first contact parts and a plurality of second openings corresponding to the second contact parts; a current spreading electrode formed on the first insulating structure, including a first current spreader and a plurality of second current sp
    Type: Application
    Filed: May 3, 2024
    Publication date: November 7, 2024
    Inventors: Hsin-Ying WANG, Jhih-Yong YANG, Chien-Chih LIAO, Chao-Hsing CHEN, Jheng-Long HUANG, Ching-Hsing SHEN, Hui-Fang KAO
  • Publication number: 20240339564
    Abstract: A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ΒΌ of a thickness of the substrate.
    Type: Application
    Filed: April 3, 2024
    Publication date: October 10, 2024
    Inventors: Wei-Che WU, Chih-Hao CHEN, Yu-Ling LIN, Chao-Hsing CHEN, Yong-Yang CHEN
  • Patent number: 12080831
    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.
    Type: Grant
    Filed: June 21, 2023
    Date of Patent: September 3, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Jia-Kuen Wang, Wen-Hung Chuang, Tzu-Yao Tseng, Cheng-Lin Lu
  • Publication number: 20240274766
    Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.
    Type: Application
    Filed: April 19, 2024
    Publication date: August 15, 2024
    Inventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
  • Publication number: 20240266476
    Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.
    Type: Application
    Filed: April 17, 2024
    Publication date: August 8, 2024
    Inventors: Chao-Hsing CHEN, Tsung-Hsun CHIANG, Chien-Chih LIAO, Wen-Hung CHUANG, Min-Yen TSAI, Bo-Jiun HU
  • Publication number: 20240234635
    Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.
    Type: Application
    Filed: December 29, 2023
    Publication date: July 11, 2024
    Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Tsung-Hsun CHIANG, Bo-Jiun HU, Wen-Hung CHUANG, Yu-Ling LIN
  • Publication number: 20240194724
    Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first
    Type: Application
    Filed: February 15, 2024
    Publication date: June 13, 2024
    Inventors: Chao-Hsing CHEN, I-Lun MA, Bo-Jiun HU, Yu-Ling LIN, Chien-Chih LIAO